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SLVSA95B March 2010 – July 2015 TPS62060 , TPS62061 , TPS62063

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DSG|8
- MPDS308C

散熱焊盤機械數據 (封裝 | 引腳)

DSG|8
- QFND141I

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage⁽²⁾	AVIN, PVIN	–0.3	7	V
	EN, MODE, FB	–0.3	V_IN +0.3 < 7
	SW	–0.3	7
Current (source)	Peak output	Internally limited		A
Temperature	Junction, T_J	–40	125	°C
Temperature	Storage, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

		MIN	NOM	MAX	UNIT
AV_IN , PV_IN	Supply voltage	2.7		6	V
	Output current capability			1600	mA
	Output voltage for adjustable voltage	0.8		V_IN	V
L	Effective inductance	0.7	1	1.6	µH
C_OUT	Effective output capacitance	4.5	10	22	µF
T_A	Operating ambient temperature⁽¹⁾	–40		85	°C
T_J	Operating junction temperature	–40		125	°C

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (θ_JA), as given by the following equation: T_A(max)= T_J(max)–(θ_JA × P_D(max))

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS62060, TPS62061, TPS62063	UNIT
		DSG (WSON)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	64.68	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	80.6	°C/W
R_θJB	Junction-to-board thermal resistance	34.63	°C/W
ψ_JT	Junction-to-top characterization parameter	1.65	°C/W
ψ_JB	Junction-to-board characterization parameter	35.02	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	6.61	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Over full operating ambient temperature range, typical values are at T_A = 25°C. Unless otherwise noted, specifications apply for condition V_IN = EN = 3.6 V. External components C_IN = 10 μF 0603, C_OUT = 10 μF 0603, L = 1 μH, see the parameter measurement information.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range		2.7		6	V
I_Q	Operating quiescent current	I_OUT = 0 mA, device operating in PFM mode and device not switching		18	25	μA
I_SD	Shutdown current	EN = GND, current into AVIN and PVIN		0.1	1	μA
V_UVLO	Undervoltage lockout threshold	Falling	1.73	1.78	1.83	V
V_UVLO	Undervoltage lockout threshold	Rising	1.9	1.95	1.99	V
ENABLE, MODE
V_IH	High level input voltage	2.7 V ≤ V_IN ≤ 6 V	1		6	V
V_IL	Low level input voltage	2.7 V ≤ V_IN ≤ 6 V	0		0.4	V
I_IN	Input bias current	Pin tied to GND or VIN		0.01	1	μA
POWER SWITCH
R_DS(on)	High-side MOSFET on-resistance	V_IN = 3.6 V ⁽²⁾		120	180	mΩ
	High-side MOSFET on-resistance	V_IN = 5 V⁽²⁾		95	150	mΩ
	Low-side MOSFET on-resistance	V_IN = 3.6 V⁽²⁾		90	130	mΩ
	Low-side MOSFET on-resistance	V_IN = 5 V⁽²⁾		75	100	mΩ
I_LIMF	Forward current limit MOSFET high-side and low-side	2.7V ≤ V_IN ≤ 6 V	1800	2250	2700	mA
T_SD	Thermal shutdown	Increasing junction temperature		150		°C
T_SD	Thermal shutdown hysteresis	Decreasing junction temperature		10		°C
OSCILLATOR
f_SW	Oscillator frequency	2.7 V ≤ V_IN ≤ 6 V	2.6	3	3.4	MHz
OUTPUT
V_ref	Reference voltage			600		mV
V_FB(PWM)	Feedback voltage PWM mode	PWM operation, MODE = V_IN , 2.7 V ≤ V_IN ≤ 6 V, 0 mA load	–1.5%	0%	1.5%
V_FB(PFM)	Feedback voltage PFM mode, voltage positioning	device in PFM mode, voltage positioning active⁽¹⁾		1%
V_FB	Load regulation			–0.5		%/A
V_FB	Line regulation			0		%/V
R_(Discharge)	Internal discharge resistor	Activated with EN = GND, 2 V ≤ V_IN≤ 6 V, 0.8 ≤ V_OUT ≤ 3.6 V	75	200	1450	Ω
t_START	Start-up time	Time from active EN to reach 95% of V_OUT		500		μs

(1) In PFM mode, the internal reference voltage is set to typ. 1.01 × V_ref. See the parameter measurement information.

(2) Maximum value applies for T_J = 85°C

7.6 Dissipation Ratings⁽¹⁾⁽²⁾

PACKAGE	R_θJA		POWER RATING T_A = ≤ 25°C	DERATING FACTOR ABOVE T_A = 25°C
DSG	75°C/W		1300 mW	13 mW/°C

(1) Maximum power dissipation is a function of T_J(max), θ_JAand T_A. The maximum allowable power dissipation at any allowable ambient temperature is PD = (T_J(max) – T_A)/ θ_JA.

(2) This thermal data measured with high-K board (4 layers according to JESD51-7 JEDEC Standard).