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ZHCSBB4B July 2013 – June 2017 TPS61197

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

D|16
- MPDS178G

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.5 Electrical Characteristics

V_IN = 24 V, T_A = –40°C to 85°C, typical values are at T_A= 25°C, EC1 = 470 μF, EC2 = 22 μF (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SUPPLY
V_IN	Input voltage range		8		30	V
V_{VIN_UVLO}	Undervoltage lockout threshold	V_IN falling		6.5	7	V
V_{VIN_HYS}	VIN UVLO hysteresis			300		mV
I_{Q_VIN}	Operating quiescent current into VIN	Device enabled, no switching, V_IN = 30 V			2	mA
I_SD	Shutdown current	V_IN = 12 V V_IN = 30 V			25 50	µA
V_DD	Regulation voltage for internal circuit	0 mA < I_DD< 15 mA	6.6	7	7.4	V
EN and PWM
V_H	Logic high input on EN, PWM	V_IN = 8 V to 30 V	1.6			V
V_L	Logic low input on EN, PWM	V_IN = 8 V to 30 V			0.75	V
R_PD	Pulldown resistance on EN, PWM		400	800	1600	kΩ
UVLO
V_UVLOTH	Threshold voltage at UVLO pin		1.204	1.229	1.253	V
I_UVLO	UVLO input bias current	V_UVLO = V_UVLOTH – 50 mV	–0.1		0.1	µA
I_UVLO	UVLO input bias current	V_UVLO = V_UVLOTH + 50 mV	–4.4	-3.9	–3.3	µA
SOFT START
I_SS	Soft start charging current	PWM dimming on, V_REF< 2 V		200		µA
CURRENT REGULATION
V_{IFB_REG}	IFB pin regulation voltage	T_J = 25°C to 85°C	293	300	307	mV
V_{IFB_SCP}	IFB short to ground protection threshold			200		mV
V_{IFB_OVP}	IFB over voltage protection threshold		1	1.1	1.2	V
I_{IFB_LEAK}	IFB pin leakage current	V_IFB = 300 mV	–100		100	nA
BOOST REFERENCE VOLTAGE
V_REF	Reference voltage range for boost controller		0		3.5	V
I_{REF_LEAK}	Leakage current at REF	T_J = –40°C to 85°C	–25		25	nA
OSCILLATOR
V_FSW	FSW pin reference voltage			1.8		V
ERROR AMPLIFIER
I_SINK	Comp pin sink current	V_OVP = V_REF + 200 mV, V_COMP = 1V		20		µA
I_SOURCE	Comp pin source current	V_OVP = V_REF – 200 mV, V_COMP = 1V		20		µA
Gm_EA	Error amplifier transconductance		90	120	150	µS
R_EA	Error amplifier output resistance			20		MΩ
GATE DRIVER
R_{GDRV_SRC}	Gate driver impedance when sourcing	V_GDRV = 7 V, I_GDRV = –20 mA		5	10	Ω
R_{GDRV_SNK}	Gate driver impedance when sinking	V_DD = 7 V, I_GDRV = 20 mA		2	5	Ω
I_{GDRV_SRC}	Gate driver source current	V_DD = 7 V, V_GDRV = 5 V	200			mA
I_{GDRV_SNK}	Gate driver sink current	V_DD = 7 V, V_GDRV = 2 V	400			mA
V_{PWM_OCP}	Overcurrent detection threshold during PWM	V_IN = 8 V to 30 V, T_J = 25°C to 125°C	376	400	424	mV
V_{PFM_OCP}	Overcurrent detection threshold during PFM			180		mV
OVP
V_OVPTH	Overvoltage protection threshold		2.98	3.04	3.1	V
I_{OVP_LEAK}	Leakage current at OVP pin		–100	0	100	nA
FAULT INDICATOR
I_{FLT_H}	Leakage current at high impedance	V_FLT = 24 V		1		nA
I_{FLT_L}	Sink current at low output	V_FLT = 1 V	2	5		mA
THERMAL SHUTDOWN
T_STDN	Thermal shutdown threshold			150		°C
T_HYS	Thermal shutdown threshold hysteresis			15		°C