国产精彩乱子真实视频,久久AV无码精品人妻系列,成人熟女一级av

ZHCSBL8C September 2013 – February 2016 TPS560200

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DBV|5
- MPDS018T

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VIN	–0.3	20	V
	EN	–0.3	7
	VSENSE	–0.3	3
Output voltage	PH	–0.6	20
Output voltage	PH 10-ns transient	–2	20
Source current	EN		±100	µA
Source current	PH	Current limit		A
Sink current	PH	Current limit		A
Operating junction temperature		–40	125	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_I	Input voltage range	4.5	17	V
T_J	Operating junction temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS560200	UNIT
		DBV
		5 Pins
R_θJA	Junction-to-ambient thermal resistance	166.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	100
R_θJB	Junction-to-board thermal resistance	75.5
ψ_JT	Junction-to-top characterization parameter	29.2
ψ_JB	Junction-to-board characterization parameter	3.7
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	28.7

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

T_J = –40°C to 125°C, VIN = 4.5 V to 17 V (unless otherwise noted)

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
VIN Operating input voltage		4.5		17	V
VIN Internal UVLO threshold	VIN Rising	3.9	4.35	4.5	V
VIN Internal UVLO hysteresis			200		mV
VIN Shutdown supply current	EN = 0 V, VIN = 12 V	2.0	3.7	9	µA
VIN Operating– non switching supply current	VSENSE = 850 mV, VIN = 12 V	35	60	95	µA
ENABLE (EN PIN)
Enable threshold	Rising		1.16	1.29	V
Enable threshold	Falling	1.05	1.13		V
Internal Soft-Start	VSENSE ramps from 0 V to 0.8 V		2		ms
OUTPUT VOLTAGE
Voltage reference	25°C, VIN = 12 V, VOUT = 1.05 V, IOUT = 5 mA, Pulse-Skipping	0.796	0.804	0.812	V
	25°C, VIN = 12 V, VOUT = 1.05 V, IOUT = 100 mA, Continuous current mode	0.792	0.800	0.808	V
	VIN = 12 V, VOUT = 1.05 V, IOUT = 100 mA, Continuous current mode	0.789	0.800	0.811	V
MOSFET
High-side switch resistance⁽²⁾⁽¹⁾	VIN = 12 V	0.50	0.95	1.50	Ω
Low-side switch resistance⁽²⁾	VIN = 12 V	0.20	0.33	0.55	Ω
CURRENT LIMIT
Low-side switch sourcing current limit	LOUT = 10 µH, Valley current, VOUT = 1.05 V	550	650	775	mA
THERMAL SHUTDOWN
Thermal shutdown			170		°C
Thermal shutdown hysteresis			10		°C
ON-TIME TIMER CONTROL
On time	VIN = 12 V	130	165	200	ns
Minimum off time	25°C, VSENSE = 0.5 V		250	400	ns
OUTPUT UNDERVOLTAGE PROTECTION
Output UVP threshold	Falling	56	63	69	%VREF
Hiccup time			15		ms