4 修訂歷史記錄

Changes from F Revision (March 2017) to G Revision

• Added TI 參考設(shè)計(jì)頂部導(dǎo)航圖標(biāo) Go
• Added VBOOT clamping stipulation to Equation 2Go

Changes from E Revision (March 2014) to F Revision

• 在特性、詳細(xì)設(shè)計(jì)流程和器件支持部分Go
• Changed the Handling Ratings table to the ESD Ratings tableGo
• Moved the Storage temperature to the Absolute Maximum Ratings tableGo
• Changed V_IN MIN Value From: 4.5 V To: V_O + V_DO, and added Note 1 in the Recommended Operating ConditionsGo
• Updated text and added Equation 1 and Equation 2 in Low Dropout Operation and Bootstrap Voltage (BOOT)Go
• Deleted text: "The start and stop voltage for a typical 5 V..." and Figure: "5V Start/Stop Voltage" from the Low Dropout Operation and Bootstrap Voltage (BOOT) sectionGo
• Changed Equation 7 and Equation 8Go
• Changed Equation 27Go
• Added new section: Minimum V_INGo
• Deleted 2 graphs named "Low Dropout Operation" from the Application Curves sectionGo

Changes from D Revision (February 2013) to E Revision

• 將數(shù)據(jù)表更改成了全新的 TI 版面布局并增加了器件信息表Go
• Added the Handling Ratings table and Recommended Operating Conditions tableGo
• Changed the Operating: nonswitching supply current TEST CONDITIONS From: FB = 0.83 V To: FB = 0.9 V Go
• Changed RT/CLK high threshold MAX value From: 1.7 V To: 2 V Go
• Changed Figure 6 title From: HIGH FREQUENCY RANGE To: LOW FREQUENCY RANGEGo
• Changed Figure 7 title From: LOW FREQUENCY RANGE To: HIGH FREQUENCY RANGEGo

Changes from C Revision (October 2012) to D Revision

• Changed Figure 11 and Figure 12 From: I_EN (µV) To: I_EN (µA)Go

Changes from B Revision (September 2012) to C Revision

• Changed From: 20 mV/div To: 200 mV/div in Figure 42Go

Changes from A Revision (September 2012) to B Revision

• 功能從“1μA 關(guān)斷電流”更改為“2μA 關(guān)斷電流”Go

Changes from * Revision (August 2012) to A Revision

• 將器件狀態(tài)從“產(chǎn)品預(yù)覽”更改成了“生產(chǎn)數(shù)據(jù)”Go