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SLVSAB0B December 2010 – November 2014 TPS5401

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DGQ|10
- MPDS043F

散熱焊盤機械數據 (封裝 | 引腳)

DGQ|10
- PPTD325B

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

Over operating temperature range (unless otherwise noted).⁽¹⁾

		MIN	MAX	UNIT
Input voltage	VIN	–0.3	47	V
	EN	–0.3	5
	BOOT		55
	VSENSE	–0.3	3
	COMP	–0.3	3
	PWRGD	–0.3	6
	SS/TR	–0.3	3
	RT/CLK	–0.3	3.6
Output voltage	BOOT – PH		8	V
	PH	–0.6	47
	PH, 10-ns transient	–2	47
Voltage difference	Thermal pad to GND		±200	mV
Source current	EN		100	μA
	BOOT		100	mA
	VSENSE		10	μA
	PH	Current limit		A
	RT/CLK		100	μA
Sink current	VIN	Current limit		A
	COMP		100	μA
	PWRGD		10	mA
	SS/TR		200	μA
Storage temperature range, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±1000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	÷500	V

(1) JEDEC document JEP155 states that 1000-V HBM allows safe manufacturing with a standard ESD control process. QSS 009-105 (JESD22-A114A)

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. QSS 009-147 (JESD22-C101B.01)

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
	Operating input voltage on the VIN pin	3.5	42	V
T_J	Operating junction temperature	–40	150	°C
	Output voltage	0.8	39	V
	Output current	0	0.5	A

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		DGQ	UNIT
THERMAL METRIC⁽¹⁾		10 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	65.0	°C/W
R_θJC(top)	Junction-to-case(top) thermal resistance	48.0
R_θJB	Junction-to-board thermal resistance	38.2
ψ_JT	Junction-to-top characterization parameter	2.0
ψ_JB	Junction-to-board characterization parameter	37.9
R_θJC(bot)	Junction-to-case(bottom) thermal resistance	13.6

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

6.5 Electrical Characteristics

T_J = –40°C to 150°C, V_IN = 3.5 V to 42 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
V_IN	Operating input voltage		3.5		42	V
	Internal undervoltage lockout threshold	No voltage hysteresis, rising and falling		2.5		V
	Shutdown supply current	V_EN = 0 V		1.3	4	μA
	Operating: nonswitching supply current	V_VSENSE = 0.83 V, V_IN = 12 V, 25°C		116	136	μA
ENABLE AND UVLO (EN PIN)
	Enable threshold voltage	No voltage hysteresis, rising and falling, 25°C	0.9	1.25	1.55	V
	Input current	Enable threshold 50 mV		–3.8		μA
	Input current	Enable threshold –50 mV		–0.9		μA
	Hysteresis current			–2.9		μA
VOLTAGE REFERENCE
V_ref	Voltage reference		0.772	0.8	0.828	V
HIGH-SIDE MOSFET
	On-resistance	V_IN = 3.5 V, V_BOOT – V_PH = 3 V		300		mΩ
	On-resistance	V_IN = 12 V, V_BOOT – V_PH = 6 V		200	410	mΩ
ERROR AMPLIFIER
	Input current			50		nA
gm_EA	Error amplifier transconductance	–2 μA < I_COMP < 2 μA, V_COMP = 1 V		97		μMhos
gm_EA	Error amplifier transconductance during slow-start	–2 μA < I_COMP < 2 μA, V_COMP = 1 V, V_VSENSE = 0.4 V		26		μMhos
	Error amplifier dc gain	V_VSENSE = 0.8 V		10,000		V/V
	Error amplifier bandwidth			2700		kHz
	Error amplifier source/sink	V_COMP = 1 V, 100 mV overdrive		±7		μA
gm_PS	COMP to switch current transconductance			1.9		A/V
CURRENT LIMIT
	Current limit threshold	V_IN = 12 V, T_J = 25°C	0.6	0.94		A
THERMAL SHUTDOWN
	Thermal shutdown			182		°C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
	Switching-frequency range using RT mode		100		2500	kHz
f_SW	Switching frequency	R_T = 200 kΩ	450	581	720	kHz
	Switching-frequency range using CLK mode		300		2200	kHz
	Minimum CLK input pulse width			40		ns
	RT/CLK high threshold			1.9	2.2	V
	RT/CLK low threshold		0.5	0.7		V
	RT/CLK falling edge to PH rising edge delay	Measured at 500 kHz with R_T resistor in series		60		ns
	PLL lock-in time	Measured at 500 kHz		100		μs
SLOW-START AND TRACKING (SS/TR PIN)
	Charge current	V_SS/TR = 0.4 V		2		μA
	SS/TR-to-VSENSE matching	V_SS/TR = 0.4 V		45		mV
	SS/TR-to-reference crossover	98% nominal		1		V
	SS/TR discharge current (overload)	VSENSE = 0 V, V_SS/TR = 0.4 V		112		μA
	SS/TR discharge voltage	V_VSENSE = 0 V		54		mV
POWER GOOD (PWRGD PIN)
	VSENSE low threshold	V_VSENSE falling		92%		V_ref
	VSENSE low threshold	V_VSENSE rising		94%		V_ref
	VSENSE high threshold	V_VSENSE rising		109%		V_ref
	VSENSE high threshold	V_VSENSE falling		107%		V_ref
	Hysteresis	V_VSENSE falling		2%
	Output-high leakage	V_VSENSE = V_ref, V_PWRGD = 5.5 V, 25°C		10		nA
	On-resistance	I_PWRGD = 3 mA, V_VSENSE < 0.77 V		50		Ω
	Minimum V_IN for defined output	V_PWRGD < 0.5 V, I_PWRGD = 100 μA		0.95	1.5	V