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ZHCSJN4C February 2018 – February 2020 TPS2HB16-Q1

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

PWP|16
- MPDS371C

散熱焊盤機械數據 (封裝 | 引腳)

PWP|16
- PPTD352A

訂購信息

Table 7. Electrical Characteristics

V_BB = 6 V to 18 V, T_J = -40°C to 150°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT VOLTAGE AND CURRENT
V_DSCLAMP	V_DS clamp voltage			40		46	V
V_BBCLAMP	V_BB clamp voltage			58		76	V
V_UVLOF	V_BB undervoltage lockout falling	Measured with respect to the GND pin of the device		2.0		3	V
V_UVLOR	V_BB undervoltage lockout rising	Measured with respect to the GND pin of the device		2.2		3	V
I_SB	Standby current (total device leakage including both MOSFET channels)	V_BB = 13.5 V, T_J = 25°C V_ENx = V_{DIA_EN} = 0 V, V_OUT = 0 V				0.5	µA
I_SB		V_BB= 13.5 V, T_J = 125°C, V_ENx = V_{DIA_EN} = 0 V, V_OUT = 0 V				4	µA
IL_NOM	Continuous load current, per channel	Two channels enabled, T_AMB = 70°C			5		A
IL_NOM	Continuous load current, per channel	One channel enabled, T_AMB = 70°C			7		A
I_OUT(standby)	Output leakage current (per channel)	V_BB = 13.5 V, T_J = 25°C V_ENx = V_{DIA_EN} = 0 V, V_OUT = 0 V			0.01	0.5	µA
I_OUT(standby)	Output leakage current (per channel)	V_BB= 13.5 V, T_J = 125°C V_ENx = V_{DIA_EN} = 0 V, V_OUT = 0 V				1.5	µA
I_DIA	Current consumption in diagnostic mode	V_BB = 13.5 V, I_SNS = 0 mA V_ENx = 0 V, V_{DIA_EN}= 5 V, V_OUT = 0V			3	6	mA
I_Q	Quiescent current	V_BB = 13.5 V V_ENx = V_{DIA_EN} = 5 V, I_OUTx = 0 A			3	6	mA
t_STBY	Standby mode delay time	V_ENx = V_{DIA_EN} = 0 V to standby		12	17	22	ms
RON CHARACTERISTICS
R_ON	On-resistance (Includes MOSFET and package)	T_J = 25°C, 6 V ≤ V_BB ≤ 28 V, I_OUT1 = I_OUT2 > 1 A			16		mΩ
		T_J = 150°C, 6 V ≤ V_BB ≤ 28 V, I_OUT1 = I_OUT2 > 1 A				40	mΩ
		T_J = 25°C, 3 V ≤ V_BB ≤ 6 V, I_OUT1 = I_OUT2 > 1 A				30	mΩ
R_ON(REV)	On-resistance during reverse polarity	T_J = 25°C, -18 V ≤ V_BB ≤ -8 V			16		mΩ
R_ON(REV)	On-resistance during reverse polarity	T_J = 105°C, -18 V ≤ V_BB ≤ -8 V				40	mΩ
CURRENT SENSE CHARACTERISTICS
K_SNS	Current sense ratio I_OUTx / I_SNS	I_OUTX= 1 A			3000
I_SNSI	Current sense current and accuracy	V_EN = V_{DIA_EN} = 5 V, V_SEL1 = 0 V, V_SEL2 = X	I_OUT = 6 A		2.000		mA
			I_OUT = 6 A	–5		5.3	%
			I_OUT = 3 A		1.000		mA
			I_OUT = 3 A	–5		5.3	%
			I_OUT = 1 A		0.333		mA
			I_OUT = 1 A	–5		5.3	%
			I_OUT = 300 mA		0.1		mA
			I_OUT = 300 mA	–6		6.3	%
			I_OUT = 100 mA		0.0322		mA
			I_OUT = 100 mA	–9		9.6	%
			I_OUT = 50 mA		0.0154		mA
			I_OUT = 50 mA	–19.5		18.7	%
			I_OUT = 20 mA		0.0054		mA
			I_OUT = 20 mA	-59.3		53.1	%
TJ SENSE CHARACTERISTICS
I_SNST	Temperature sense current Device Version A/B	V_{DIA_EN} = 5 V, V_SEL1 = 5 V, V_SEL2 = 0 V	T_J = -40°C	0.00	0.12	0.29	mA
			T_J = 25°C	0.68	0.85	1.02	mA
			T_J = 85°C	1.25	1.52	1.79	mA
			T_J = 125°C	1.61	1.96	2.31	mA
			T_J = 150°C	1.80	2.25	2.70	mA
dI_SNST/dT	Coefficient				0.011		mA/°C
SNS CHARACTERISTICS
I_SNSFH	I_SNSfault high-level	V_{DIA_EN} = 5 V, V_SEL1 = 0 V, V_SEL2= X		4	4.5	5.3	mA
I_SNSleak	I_SNS leakage	V_{DIA_EN} = 0 V				1	µA
CURRENT LIMIT CHARACTERISTICS
I_CL	Current Limit Threshold	Device Version A, T_J = -40°C to 150°C	R_ILIM = GND, open, or out of range		29.1		A
			R_ILIM = 5 kΩ	17.4	22	29.3	A
			R_ILIM = 25 kΩ	2.66	4.1	5.46	A
		Device Version B, T_J = -40°C to 150°C	R_ILIM = GND, open, or out of range		67.5		A
			R_ILIM = 5 kΩ	38	48.5	65	A
			R_ILIM = 25 kΩ	8.1	10.3	13.7	A
		Device Version F	T_J = -40°C to 60°C	51.65	60	76.32	A
		Device Version F	T_J = 150°C	42.16	48.00	57.60	A
K_CL	Current Limit Ratio	Version A			102		A * kΩ
K_CL	Current Limit Ratio	Version B			258		A * kΩ
FAULT CHARACTERISTICS
V_OL	Open-load (OL) detection voltage	V_ENx = 0 V, V_{DIA_EN} = 5 V		2	3	4	V
t_OL1	OL and STB indication-time from ENx falling	V_ENx= 5 V to 0 V, V_{DIA_EN} = 5 V, V_SEL1 = 0 V⁽¹⁾ I_OUT = 0 mA, V_OUTx = 4 V		300	500	700	µs
t_OL2	OL and STB indication-time from DIA_EN rising	V_ENx = 0 V, V_{DIA_EN} = 0 V to 5 V, V_SEL1 = 0 V⁽¹⁾ I_OUT= 0 mA, V_OUTx = 4 V				50	µs
t_OL3	OL and STB indication-time from V_OUT rising	V_ENx = 0 V, V_{DIA_EN} = 5 V, V_SEL1 = 0 V⁽¹⁾ I_OUT = 0 mA, V_OUTx = 0 V to 4 V				50	µs
T_ABS	Thermal shutdown			150			°C
T_REL	Relative thermal shutdown				50		°C
T_HYS	Thermal shutdown hysteresis				28		°C
t_FAULT	Fault shutdown indication-time	V_{DIA_EN} = 5 V Time between switch shutdown and I_SNS settling at I_SNSFH				50	µs
t_RETRY	Retry time	Time from fault shutdown until switch re-enable (thermal shutdown or current limit).		1	2	3	ms
EN1 AND EN2 PIN CHARACTERISTICS⁽²⁾
V_{IL, ENx}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, ENx}	Input voltage high-level	No GND network diode		2			V
V_{IHYS, ENx}	Input voltage hysteresis				350		mV
R_ENx	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, EN}	Input current low-level	V_EN = 0.8 V			0.8		µA
I_{IH, EN}	Input current high-level	V_EN = 5 V			5		µA
DIA_EN PIN CHARACTERISTICS⁽²⁾
V_{IL, DIA_EN}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, DIA_EN}	Input voltage high-level	No GND network diode		2.0			V
V_{IHYS, DIA_EN}	Input voltage hysteresis				350		mV
R_{DIA_EN}	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, DIA_EN}	Input current low-level	V_{DIA_EN} = 0.8 V			0.8		µA
I_{IH, DIA_EN}	Input current high-level	V_{DIA_EN} = 5 V			5.0		µA
SEL1 AND SEL2 PIN Characteristics
V_{IL, SELx}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, SELx}	Input voltage high-level	No GND network diode		2			V
V_{IHYS, SELx}	Input voltage hysteresis				350		mV
R_SELx	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, SELX}	Input current low-level	V_SELX = 0.8 V			0.8		µA
I_{IH, SELX}	Input current high-level	V_SELX = 5 V			5		µA
LATCH PIN CHARACTERISTICS⁽²⁾
V_{IL, LATCH}	Input voltage low-level	No GND network diode				0.8	V
V_{IH, LATCH}	Input voltage high-level	No GND network diode		2.0			V
V_{IHYS, LATCH}	Input voltage hysteresis				350		mV
R_LATCH	Internal pulldown resistor			0.5	1	2	MΩ
I_{IL, LATCH}	Input current low-level	V_LATCH = 0.8 V			0.8		µA
I_{IH, LATCH}	Input current high-level	V_LATCH = 5 V			5.0		µA

(1) SELx must be set to select the relevant channel. Diagnostics are performed on Channel 1 when SELx = 00 and diagnostics are performed on channel 2 when SELx =01

(2) V_BB = 3 V to 28 V