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ZHCSMU0D July 2009 – December 2020 TPS23753A

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

PW|14
- MPDS360A

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

7.6 Electrical Characteristics: PoE and Control

Unless otherwise noted: CS = APD = CTL = RTN, GATE open, R_FRS = 60.4 k?, R_BLNK = 249 k?, C_VB = C_VC = 0.1 μF, R_DEN = 24.9 k?, R_CLS open, V_VDD-VSS = 48 V, V_VDD1-RTN = 48 V, 8.5 V ≤ V_VC-RTN ≤ 18 V, –40°C ≤ T_J ≤ 125°C [V_SS = RTN and V_DD = V_DD1] or [V_SS = RTN = V_DD], all voltages referred to RTN. [V_DD = V_DD1] or [V_DD1 = RTN], V_VC-RTN = 0 V, all voltages referred to V_SS. Typical specifications are at 25°C.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
DEN (DETECTION) (V_DD = V_DD1 = RTN = V_SUPPLY POSITIVE)
	Detection current	Measure I_SUPPLY	62	64.3	66.5	μA
		V_DD = 1.6 V	62	64.3	66.5
		V_DD = 10 V	399	406	413
	Detection bias current	V_DD = 10 V, DEN open, Measure I_SUPPLY		5.2	12	μA
V_{PD_DIS}	Hotswap disable threshold		3	4	5	V
I_lkg	DEN leakage current	V_DEN = V_DD = 57 V, Float V_DD1 and RTN, Measure I_DEN		0.1	5	μA
CLS (CLASSIFICATION) (V_DD = V_DD1 = RTN = V_SUPPLY POSITIVE)
I_CLS	Classification current	13 V ≤ V_DD ≤ 21 V, Measure I_SUPPLY	1.8	2.14	2.4	mA
		R_CLS = 1270 ?	1.8	2.14	2.4
		R_CLS = 243 ?	9.9	10.6	11.3
		R_CLS = 137 ?	17.6	18.6	19.4
		R_CLS = 90.9 ?	26.5	27.9	29.3
		R_CLS = 63.4 ?	38	39.9	42
V_{CL_ON}	Classification regulator lower threshold	Regulator turns on, V_DD rising	10	11.7	13	V
V_{CL_HYS}	Classification regulator lower threshold	Hysteresis⁽¹⁾	1.9	2.05	2.2	V
V_{CU_OFF}	Classification regulator upper threshold	Regulator turns off, V_DD rising	21	22	23	V
V_{CU_HYS}	Classification regulator upper threshold	Hysteresis⁽¹⁾	0.5	0.77	1	V
I_lkg	Leakage current	V_DD = 57 V, V_CLS = 0 V, DEN = V_SS, Measure I_CLS			1	μA
RTN (PASS DEVICE) (V_DD1 = RTN)
	ON-resistance			0.7	1.2	?
	Current limit	V_RTN = 1.5 V, V_DD = 48 V, Pulsed Measurement	405	450	505	mA
	Inrush limit	V_RTN = 2 V, V_DD: 0 V → 48 V, Pulsed Measurement	100	140	180	mA
	Foldback voltage threshold	V_DD rising	11	12.3	13.6	V
I_lkg	Leakage current	V_DD = V_RTN = 100 V, DEN = V_SS			40	μA
UVLO
UVLO_R	Undervoltage lockout threshold	V_DD rising	33.9	35	36.1	V
UVLO_H	Undervoltage lockout threshold	Hysteresis ⁽¹⁾	4.4	4.55	4.7	V
THERMAL SHUTDOWN
	Turnoff temperature		135	145	155	°C
	Hysteresis⁽²⁾			20		°C

(1) The hysteresis tolerance tracks the rising threshold for a given device.

(2) These parameters are provided for reference only.