ZHCSDL8A December 2014 – February 2015 TPD6F002-Q1
PRODUCTION DATA.
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VIO | IO to GND | 5.75 | V | ||
| TJ | Junction temperature | 125 | °C | ||
| Tstg | Storage temperature range | –65 | 150 | °C | |
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002, all pins(1) | ±10 | kV | |
| Charged device model (CDM), per AEC Q101-005, all pins | ±1.5 | ||||
| IEC 61000-4-2 Contact Discharge | ±20 | ||||
| IEC 61000-4-2 Air-Gap Discharge | ±30 | ||||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIO | Input pin voltage | 0 | 5.5 | V | |
| TA | Operating free-air temperature | -40 | 125 | °C | |
| THERMAL METRIC(1) | TPD6F002-Q1 | UNIT | |
|---|---|---|---|
| DSV | |||
| 12 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 120.7 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 104.4 | |
| RθJB | Junction-to-board thermal resistance | 78.5 | |
| ψJT | Junction-to-top characterization parameter | 13.0 | |
| ψJB | Junction-to-board characterization parameter | 77.7 | |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 66.5 | |
| PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VBR | DC breakdown voltage | IIO = 10 μA | 6 | V | ||
| R | Resistance | VIN = 3.3 V, IIn-to-out = 1mA | 85 | 100 | 115 | Ω |
| C | Capacitance (C1 or C2) | VIO = 2.5 V | 17 | pF | ||
| IIO | Channel leakage current | VIO = 3.3 V | 1 | 20 | nA | |
| fC | Cut-off frequency | ZSOURCE = 50 Ω, ZLOAD = 50 Ω | 100 | MHz | ||
Figure 1. DC Voltage-Current Sweep across Input, Output Pins
Figure 3. Typical Insertion-loss Characteristics
Figure 5. +8-kV IEC Waveform
Figure 2. Series Resistance vs Temperature
Figure 4. Capacitance (C1 or C2) vs. Bias Voltage
Figure 6. -8-kV IEC Waveform