SLLS685D July 2006 – September 2015 TPD6E001
PRODUCTION DATA.
| MIN | MAX | UNIT | ||||
|---|---|---|---|---|---|---|
| VCC | –0.3 | 7 | V | |||
| VI/O | –0.3 | VCC + 0.3 | V | |||
| TJ | Junction temperature | 150 | °C | |||
| Bump temperature (soldering) | Infrared (15 s) | 220 | °C | |||
| Vapor phase (60 s) | 215 | °C | ||||
| Lead temperature (soldering, 10 s) | 300 | °C | ||||
| Tstg | Storage temperature | –65 | 150 | °C | ||
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±15000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | V | ||
| IEC 61000-4-2 Contact Discharge | ±8000 | V | ||
| IEC 61000-4-2 Air-Gap Discharge | ±15000 | V | ||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| TA Operating free-air temperature range | -40 | 85 | °C | ||
| Operating Voltage | VCC Pin | 0.9 | 5.5 | V | |
| IOx Pins | 0 | VCC | |||
| THERMAL METRIC(1) | TPD6E001 | UNIT | ||
|---|---|---|---|---|
| RSE (UQFN) | RSF (WQFN) | |||
| 10 PINS | 12 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 235.0 | 75.8 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 140.9 | 74.6 | °C/W |
| RθJB | Junction-to-board thermal resistance | 154.6 | 51.3 | °C/W |
| ψJT | Junction-to-top characterization parameter | 21.8 | 5.9 | °C/W |
| ψJB | Junction-to-board characterization parameter | 154.6 | 51.4 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 31.4 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VCC | Supply voltage | 0.9 | 5.5 | V | |||
| ICC | Supply current | 1 | 100 | nA | |||
| VF | Diode forward voltage | IF = 10 mA | 0.65 | 0.95 | V | ||
| VBR | Breakdown voltage | IBR = 10 mA | 11 | V | |||
| VC | Channel clamp voltage(2) | TA = 25°C, ±15-kV HBM, IF = 10 A |
Positive transients | VCC + 25 | V | ||
| Negative transients | –25 | V | |||||
| TA = 25°C, ±8-kV Contact Discharge (IEC 61000-4-2), IF = 24 A |
Positive transients | VCC + 60 | V | ||||
| Negative transients | –60 | V | |||||
| TA = 25°C, ±15-kV Air-Gap Discharge (IEC 61000-4-2), IF = 45 A |
Positive transients | VCC + 100 | V | ||||
| Negative transients | –100 | V | |||||
| Ii/o | Channel leakage current | Vi/o = GND to VCC | ±1 | nA | |||
| Ci/o | Channel input capacitance | VCC = 5 V, Bias of VCC/2 | 1.5 | pF | |||
Figure 1. IO Capacitance vs IO Voltage
Figure 2. IO Leakage Current vs Temperature