SLVSBQ6B December 2012 – September 2015 TPD5E003
PRODUCTION DATA.
6 Specifications
6.1 Absolute Maximum Ratings
See (1)| MIN | MAX | UNIT | |
|---|---|---|---|
| I/O voltage tolerance | 5.5 | V | |
| Peak pulse current (tp = 8/20 μs), IPP | 3 | A | |
| Peak pulse power (tp = 8/20 μs), PPP | 40 | W | |
| Storage temperature, Tstg | –55 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings: JEDEC
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings: IEC 61000-4-2
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±15000 | V |
| IEC 61000-4-2 air-gap discharge | ±15000 | |||
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Operating free-air temperature, TA | –40 | 125 | °C | ||
| Operating voltage | Pin 1, 3, 4, 5, 6 to Pin 2 | 0 | 5 | V | |
6.5 Thermal Information
| THERMAL METRIC(1) | TPD5E003 | UNIT | |
|---|---|---|---|
| DPF (X2SON) | |||
| 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 246.7 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 87.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 187.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 198 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 32 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
6.6 Electrical Characteristics
| PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | II = 0.1 µA | 5 | V | ||
| ILEAK | Leakage Current | Pin 1, 3, 4, 5, or 6 = 5 V, Pin 2 = 0 V | 10 | 100 | nA | |
| VCLAMP | Clamp voltage with ESD strike | IPP = 6 A, TLP, Dx pin to GND, TA = 25 °C | 13 | 15.6 | V | |
| IPP = 10 A, TLP, Dx pin to GND, TA = 25 °C | 16.3 | 19.5 | V | |||
| RDYN | Dynamic resistance | ITLP = 6 A to 10 A, Dx pin to GND, TA = 25 °C | 0.8 | 1 | Ω | |
| ITLP = 6 A to 10 A, GND to Dx pin, TA = 25 °C | 0.3 | 0.4 | Ω | |||
| CIO | IO capacitance | VIO = 2.5 V, 1 MHz, TA = 25 °C | 5.6 | 7 | 8.4 | pF |
| VIO = 0 V, 1 MHz, TA = 25 °C | 8 | 10 | 12 | pF | ||
| VBR | Break-down voltage | IIO = 1 mA | 6 | 7 | 8.5 | V |
6.7 Typical Characteristics
Figure 1. Surge Plot (tp = 8/20 μs), Pin Dx to GND
Figure 3. Capacitance vs DC Bias Voltage
Figure 5. DC SWEEP V-I Curve
Figure 7. IEC 61000-4-2 Clamping Voltage, –8-kV Contact
Figure 2. Surge Plot (tp = 8/20 μs), Pin GND to Dx
Figure 4. 30 A TLP Plot
Figure 6. IEC 61000-4-2 Clamping Voltage, 8-kV Contact