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SLLS907E August 2008 – August 2014 TPD4F003 , TPD6F003 , TPD8F003

PRODUCTION DATA.

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機械數(shù)據(jù) (封裝 | 引腳)

DQD|8

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DQD|8
- QFND237

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
V_IO	IO to GND			6	V
T_J	Junction temperature			150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾		±15	kV
		Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾		±1500	V
		IEC 61000-4-2 ESD Rating - Contact		±12	kV
		IEC 61000-4-2 ESD Rating - Air		±20	kV

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IO		0	5.5	V
T_A		–40	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPD4F003	TPD6F003	TPD8F003	UNIT
		DQD
		8 PINS	12 PINS	16 PINS
R_θJA	Junction-to-ambient thermal resistance	115.6	89.2	80.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	108.5	100.1	88.3
R_θJB	Junction-to-board thermal resistance	66.4	50.5	45.8
ψ_JT	Junction-to-top characterization parameter	6.8	9.4	9.2
ψ_JB	Junction-to-board characterization parameter	65.9	50.0	45.4
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	33.2	31.0	31.8

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

T_A = –40°C to 85°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP⁽¹⁾	MAX	UNIT
V_BR	DC breakdown voltage	I_IO = 10 μA	6			V
R	Resistance		85	100	115	Ω
C	Capacitance (C1 or C2)	V_IO = 2.5 V		8.5		pF
I_IO	Channel leakage current	V_IO = 3.3 V		10		nA
f_C	Cut-off frequency	Z_SOURCE = 50 Ω, Z_LOAD = 50 Ω		200		MHz