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ZHCSCQ5C August 2014 – September 2017 TPD1E05U06-Q1 , TPD4E05U06-Q1

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DQA|10
- MPSS004C

散熱焊盤機械數據 (封裝 | 引腳)

DQA|10
- QFND791

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
Electrical fast transient	IEC 61000-4-4 (5/50 ns)		80	A
Peak pulse	IEC 61000-4-5 Current (tp – 8/20 µs)		2.5	A
	IEC 61000-4-5 Power (tp – 8/20 µs) - TPD4E05U06-Q1⁽³⁾		40	W
	IEC 61000-4-5 Power (tp – 8/20 µs) - TPD1E05U06-Q1⁽³⁾		30	W
T_A	Operating temperature	–40	125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Voltages are with respect to GND unless otherwise noted.

(3) Measured at 25°C

6.2 ESD Ratings—AEC Specification

			VALUE	UNIT
V_(ESD)	Electrostatic discharge⁽¹⁾	Human-body model (HBM), per AEC Q100-002⁽²⁾	±8000	V
V_(ESD)	Electrostatic discharge⁽¹⁾	Charged-device model (CDM), per AEC Q100-011	±1000	V

(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device.

(2) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 ESD Ratings—IEC Specification

			VALUE	UNIT
V(ESD)	Electrostatic Discharge	IEC 61000-4-2 contact discharge - TPD4E05U06-Q1 ⁽¹⁾	±12000	V
		IEC 61000-4-2 contact discharge - TPD1E05U06-Q1	±12000
		IEC 61000-4-2 air-gap discharge	±15000

(1) Measured at 25°C, per IEC 61000.4.2 Ed. 2.0 Section 7.2.4.

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IO	Input pin voltage	0	5.5	V
T_A	Operating free-air temperature	–40	125	°C

6.5 Thermal Information

THERMAL METRIC⁽¹⁾		TPD1E05U06-Q1	TPD4E05U06-Q1	UNIT
		DPY (X1SON)	DQA (USON)
		2 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	697.3	327	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	471	189.5	°C/W
R_θJB	Junction-to-board thermal resistance	575.9	257.7	°C/W
ψ_JT	Junction-to-top characterization parameter	175.7	60.9	°C/W
ψ_JB	Junction-to-board characterization parameter	575.1	257	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER			TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT – OUTPUT RESISTANCE
V_RWM	Reverse stand-off voltage		I_IO < 10 µA				5.5	V
V_BR	Break-down voltage		I_IO = 1 mA		6.4		8.7	V
V_CLAMP	Clamp voltage		I_PP = 1 A, TLP, from I/O to GND⁽¹⁾			10		V
			I_PP = 5 A, TLP, from I/O to GND⁽¹⁾			14
			I_PP = 1 A, TLP, from GND to I/O⁽¹⁾			3
			I_PP = 5 A, TLP, from GND to I/O⁽¹⁾			7.5
I_LEAK	Leakage current		V_IO = 2.5 V			1	10	nA
R_DYN	Dynamic resistance	DPY package	I/O to GND⁽²⁾			0.8		Ω
		DPY package	GND to I/O⁽²⁾			0.7
		DQA package	I/O to GND⁽²⁾			0.96
		DQA package	GND to I/O⁽²⁾			0.9
CAPACITANCE
C_L	Line capacitance		V_IO = 2.5 V, f = 1 MHz, I/O to GND	TPD1E05U06-Q1 DPY package		0.42		pF
C_L	Line capacitance		V_IO = 2.5 V, f = 1 MHz, I/O to GND	TPD4E05U06-Q1 DQA package		0.5		pF
Δ C_IO-TO-GND	Variation of input capacitance		GND Pin = 0 V, f = 1 MHz, V_BIAS = 2.5 V, Channel x pin to GND – channel y pin to GND			0.05	0.08	pF
C_CROSS	Channel to channel input capacitance		GND Pin = 0 V, f = 1 MHz, V_BIAS = 2.5 V, between channel pins			0.04	0.08	pF