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ZHCSAL0D March 2016 – August 2020 TPD3S716-Q1

PRODUCTION DATA

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DBQ|16
- MSOI004H

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.7 Electrical Characteristics

over operating free-air temperature range, VEN = 0 V, DEN = 0 V, V_{BUS_SYS} = 5 V, V_IN = 3.3 V, VD+/VD–/D+/D–/V_{BUS_CON} = float (unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT CONSUMPTION
I_{VBUS_SLEEP}	V_BUS Sleep current consumption		Measured at V_{BUS_SYS} pin, VEN = 5 V, DEN = 5 V		45	150	μA
I_VBUS	V_BUS Operating current consumption		Measured at V_{BUS_SYS} pin		285	380	μA
I_VIN	Leakage current for V_IN		Measured at V_IN pin, V_IN = 3.6 V		12	20	μA
I_ON(LEAK)	Leakage into V_{BUS_SYS} while shorted to battery and powered on		Measured flowing into V_{BUS_SYS} pin, V_{BUS_SYS} = 5 V, V_{BUS_CON} = 18 V		225	300	μA
I_OFF(LEAK)	Leakage through V_BUS path while shorted to battery and unpowered		Measured flowing out of V_{BUS_SYS} pin, V_{BUS_SYS} = 0 V, V_{BUS_CON} = 18 V			50	μA
I_{D(OFF_LEAK)}	Leakage out of data path while shorted to battery and unpowered		Measured flowing out of D+ or D– pins, V_{BUS_SYS} = 0 V, VD+ or VD– = 18 V, V_IN = 0 V, D+/D– = 0 V	–1		1	μA
I_{D(ON_LEAK)}	Leakage out of data path while shorted to battery and powered on		Measured flowing out of D+ or D– pins, V_{BUS_SYS} = 5 V, VD+ or VD– = 18 V, V_IN = 3.3 V, D+/D– = 0 V	–1		1	μA
I_{VD(OFF_LEAK)}	Leakage into data path while shorted to battery and unpowered		Measured flowing in to VD+ or VD– pins, V_{BUS_SYS} = 0 V, VD+ or VD– = 18 V, V_IN = 0 V, D+/D– = 0 V			85	μA
I_{VD(ON_LEAK)}	Leakage into data path while shorted to battery and powered on		Measured flowing in to VD+ or VD– pins, V_{BUS_SYS} = 5 V, VD+ or VD– = 18 V, V_IN = 3.3 V D+/D– = 0 V			85	μA
V_IN PIN
V_UVLO(RISING)	Undervoltage lockout rising for V_IN	V_IN	Ramp V_IN up until V_BUS and Data FETs turn on, VEN =0 V, DEN = 0 V	2.6	2.7	2.9	V
V_{UVLO(FALLING)}	Undervoltage lockout falling for V_IN	V_IN	Ramp V_IN down until V_BUS and Data FETs turn off, VEN =0 V, DEN = 0 V	2.5	2.6	2.8	V
VEN, DEN, FLT PINS
V_IH	High-level input voltage	VEN, DEN	Set VEN ( DEN)= 0 V; Sweep VEN ( DEN) to 1.4 V; Measure when V_BUS (Data) FET turns off	1.2			V
V_IL	Low-level input voltage	VEN, DEN	Set VEN ( DEN) = 3.3 V; Sweep VEN ( DEN) from 3.3 V to 0.5 V; Measure when V_BUS (Data) FET turns on			0.8	V
I_IL	Input Leakage Current	VEN, DEN	V_{( VEN)} (V_{( DEN)})= 3.3 V ; Measure Current into VEN ( DEN) pin			1	μA
V_OL	Low-level output voltage	FLT	I_OL = 3 mA			0.4	V
OCP CIRCUIT—V_BUS
I_LIM	Overcurrent limit, R_ADJ = 280 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	505		620	mA
I_LIM	Overcurrent limit, R_ADJ = 158 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	0.905		1.1	A
I_LIM	Overcurrent limit, R_ADJ = 143 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	1.005		1.2	A
I_LIM	Overcurrent limit, R_ADJ = 93.1 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	1.505		1.8	A
I_LIM	Overcurrent limit, R_ADJ = 76.8 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	1.8		2.16	A
I_LIM	Overcurrent limit, R_ADJ = 66.5 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	2.105		2.57	A
I_LIM	Overcurrent limit, R_ADJ = 57.6 kΩ ± 1%	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	2.405		2.93	A
I_LIM	Overcurrent limit, I_ADJ = GND	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	550	700	850	mA
I_LIM	Overcurrent limit, I_ADJ = V_{BUS_SYS}	V_BUS	Progressively load V_{BUS_CON} until device asserts FLT	1.1	1.4	1.7	A
OVER TEMPERATURE PROTECTION
T_SD(RISING)	The rising over-temperature protection shutdown threshold		V_{BUS_SYS} = 5 V, VEN = 0 V, DEN = 0 V, No Load on V_{BUS_CON}, T_A stepped up until FLT is asserted	150	165	180	℃
T_SD(FALLING)	The falling over-temperature protection shutdown threshold		V_{BUS_SYS} = 5 V, VEN = 0 V, DEN = 0 V, No Load on V_{BUS_CON}, T_A stepped down from T_SD(RISING) until FLT is deasserted	125	130	142	℃
T_SD(HYST)	The over-temperature protection shutdown threshold hysteresis		T_SD(RISING) – T_SD(FALLING)	10	35	55	℃
OVP CIRCUIT—V_BUS
V_OVP(RISING)	Input overvoltage protection threshold	V_{BUS_CON}	Increase V_{BUS_CON} from 5 V to 7 V. Measure when FLT is asserted	5.6	5.8	6	V
V_HYS(OVP)	Hysteresis on OVP	V_{BUS_CON}	Difference between rising and falling OVP thresholds on V_{BUS_CON}		50		mV
V_OVP(FALLING)	Input overvoltage protection threshold	V_{BUS_CON}	Decrease V_{BUS_CON} from 7 V to 5 V. Measure when FLT is deasserted	5.52	5.75	5.98	V
V_{REV_SUPPLY(RISING)}	Reverse supply detection threshold	V_{BUS_CON} – V_{BUS_SYS}	Set V_{BUS_SYS} to 5 V. Increase V_{BUS_CON} from V_{BUS_SYS} to V_{BUS_SYS} + 300 mV. Measure the value of V_{BUS_CON} – V_{BUS_SYS} when FLT asserts. 25°C ≤ T_A ≤ 125°C	140	200	260	mV
V_{REV_SUPPLY(FALLING)}	Reverse supply detection threshold	V_{BUS_CON} – V_{BUS_SYS}	Set V_{BUS_SYS} to 5 V. Decrease V_{BUS_CON} from V_{BUS_SYS} + 300 mV to V_{BUS_SYS}. Measure the value of V_{BUS_CON} – V_{BUS_SYS} when FLT deasserts. 25°C ≤ T_A ≤ 125°C	70	120	165	mV
V_{REV_SUPPLY(HYST)}	Hysteresis on reverse supply detection	V_{BUS_CON} – V_{BUS_SYS}	Difference between rising and falling reverse supply detection thresholds		80		mV
V_{UVLO(SYS_RISING)}	Undervoltage lockout rising for V_{BUS_SYS}	V_{BUS_SYS}	V_{BUS_SYS} voltage rising from 0 V to 5 V	3.1	3.3	3.6	V
V_{HYS(UVLO_SYS)}	V_{BUS_SYS} UVLO Hysteresis	V_{BUS_SYS}	Difference between rising and falling UVLO thresholds on V_{BUS_SYS}	50	75	100	mV
V_{UVLO(SYS_FALLING)}	Undervoltage lockout falling for V_{BUS_SYS}	V_{BUS_SYS}	V_{BUS_SYS} voltage falling from 5 V to 2.9 V	3	3.2	3.5	V
V_SHRT(RISING)	Short-to-ground comparator rising threshold	V_{BUS_CON}	Increase V_{BUS_CON} voltage from 0 V until the device transitions from the short-circuit to over-current mode of operation	2.5	2.6	2.7	V
V_{SHRT(FALLING)}	Short-to-ground comparator falling threshold	V_{BUS_CON}	Set V_{BUS_SYS} = 5 V; V_IN = 3.3 V; VEN = 0 V, DEN = 0 V; Decrease V_{BUS_CON} voltage from 5 V until the device transitions from the over-current to short-circuit mode of operation	2.4	2.5	2.6	V
V_SHRT(HYST)	Short-to-ground comparator hysteresis	V_{BUS_CON}	Difference between V_SHRT(RISING) and V_{SHRT(FALLING)}		125		mV
I_SHRT	Short-to-ground current source	V_{BUS_CON}	Current sourced from V_{BUS_SYS} when device is in short-circuit mode	150		350	mA
OVP CIRCUIT—VD+/VD–
V_OVP(RISING)	Input overvoltage protection threshold	VD+/VD–	Increase VD+ or VD– (with D+ and D–) from 3.3 V to 4.5 V. Measure the value at which FLT is asserted	V_IN + 0.6	V_IN + 0.8	V_IN + 1	V
V_HYS(OVP)	Hysteresis on OVP	VD+/VD–	Difference between rising and falling OVP thresholds on VD+/VD–		50		mV
V_OVP(FALLING)	Input overvoltage protection threshold	VD+/VD–	Decrease VD+ or VD– (with D+ or D–) from 4.5 V to 2 V. Measure the value at FLT is deasserted	V_IN + 0.525	V_IN + 0.75	V_IN + 0.975	V
SHORT TO BATTERY
V_{(VBUS_STB)}	V_BUS hotplug short-to-battery tolerance	V_{BUS_CON}	Charge battery-equivalent capacitor to test voltage then discharge to pin under test through a 1 meter, 18 gauge wire. (See Figure 7-1 for more details)			18	V
V_{(DATA_STB)}	Data line hotplug short-to-battery tolerance	VD+/VD–				18	V
DATA LINE SWITCHES—VD+ to D+ or VD– to D–
C_ON	Equivalent On Capacitance		Capacitance of D+/D– switches when enabled – measure on connector side at VDx = 0.4 V		6.9		pF
R_ON	On Resistance		Measure resistance between D+ and VD+ or D– and VD–, voltage between 0 V and 0.4 V		4	6.5	Ω
R_ON(Flat)	On Resistance flatness		Measure resistance between D+ and VD+ or D– and VD–, sweep voltage between 0 V and 0.4 V		0.2	1	Ω
BW_ON	On Bandwidth (–3dB)		Measure S₂₁ bandwidth from D+ to VD+ or D– to VD– with voltage swing = 400 mVpp, V_CM= 0.2 V		910		MHz
BW_{ON_DIFF}	On Bandwidth (–3dB)		Measure S_DD21 bandwidth from D+ to VD+ and D– to VD– with voltage swing = 800 mVpp differential, V_CM= 0.2 V		1050		MHz
X_talk	Crosstalk		Measure S₂₁ bandwidth from D+ to VD– or D– to VD+ with voltage swing = 400 mVpp. Make sure to terminate open sides to 50 ohms. f = 480 MHz		–28		dB
nFET SWITCH—V_BUS
R_(DISCHARGE)	Output discharge resistance		VEN = 5 V, DEN = 5 V, Set V_{BUS_CON} = 5 V and measure current flow to ground		18	30	k?
R_ON	V_BUS path ON resistance		V_{BUS_CON} = 5 V, I_OUT = 1.5 A. See Figure 9-8 for a plot of the maximum V_BUS R_ON possible at a given junction temperature		63	135	mΩ