ZHCSCE8F April 2014 – May 2019
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information
- 7.5 Supply Current Consumption
- 7.6 Electrical Characteristics EN Pin
- 7.7 Thermal Shutdown Feature
- 7.8 Electrical Characteristics nFET Switch
- 7.9 Electrical Characteristics OVP Circuit
- 7.10 Electrical Characteristics VBUS_POWER Circuit
- 7.11 Timing Requirements
- 7.12 TPD1S514-1 Typical Characteristics
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Over Voltage Protection on VBUS_CON up to 30 V DC
- 8.3.2 Precision OVP (< ±1% Tolerance)
- 8.3.3 Low RON nFET Switch Supports Host and Charging Mode
- 8.3.4 VBUS_POWER, TPD1S514-1, TPD1S514-2, TPD1S514-3
- 8.3.5 VBUS_POWER, TPD1S514
- 8.3.6 Powering the System When Battery is Discharged
- 8.3.7 ±15 kV IEC 61000-4-2 Level 4 ESD Protection
- 8.3.8 100 V IEC 61000-4-5 µs Surge Protection
- 8.3.9 Startup and OVP Recovery Delay
- 8.3.10 Thermal Shutdown
- 8.4 Device Functional Modes
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- YZ|12
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
12.3 靜電放電警告
ESD 可能會(huì)損壞該集成電路。德州儀器 (TI) 建議通過(guò)適當(dāng)?shù)念A(yù)防措施處理所有集成電路。如果不遵守正確的處理措施和安裝程序 , 可能會(huì)損壞集成電路。
ESD 的損壞小至導(dǎo)致微小的性能降級(jí) , 大至整個(gè)器件故障。 精密的集成電路可能更容易受到損壞 , 這是因?yàn)榉浅＜?xì)微的參數(shù)更改都可能會(huì)導(dǎo)致器件與其發(fā)布的規(guī)格不相符。