ZHCSJ87A December 2018 – July 2022 TMUX6121 , TMUX6122 , TMUX6123
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Thermal Information
- 6.4 Recommended Operating Conditions
- 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
- 6.6 Switching Characteristics (Dual Supplies: ±15 V)
- 6.7 Electrical Characteristics (Single Supply: 12 V)
- 6.8 Switching Characteristics?(Single Supply: 12 V)
- Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
8.1.6 Charge Injection
The TMUX6121, TMUX6122, and TMUX6123 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 8-6 shows the setup used to measure charge injection.
Figure 8-6 Charge-Injection Measurement Setup