ZHCSHO7A February 2018 – September 2018 TMUX6104
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Thermal Information
- 6.4 Recommended Operating Conditions
- 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
- 6.6 Switching Characteristics (Dual Supplies: ±15 V)
- 6.7 Electrical Characteristics (Single Supply: 12 V)
- 6.8 Switching Characteristics (Single Supply: 12 V)
- 6.9 Typical Characteristics
- 7 Parameter Measurement Information
-
8 Detailed Description
- 8.1
Overview
- 8.1.1 On-Resistance
- 8.1.2 Off-Leakage Current
- 8.1.3 On-Leakage Current
- 8.1.4 Transition Time
- 8.1.5 Break-Before-Make Delay
- 8.1.6 Turn-On and Turn-Off Time
- 8.1.7 Charge Injection
- 8.1.8 Off Isolation
- 8.1.9 Channel-to-Channel Crosstalk
- 8.1.10 Bandwidth
- 8.1.11 THD + Noise
- 8.1.12 AC Power Supply Rejection Ratio (AC PSRR)
- 8.2 Functional Block Diagram
- 8.3 Feature Description
- 8.4 Device Functional Modes
- 8.1
Overview
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- PW|14
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
8.1.7 Charge Injection
The TMUX6104 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 23 shows the setup used to measure charge injection from source (Sx) to drain (D).
Figure 23. Charge-Injection Measurement Setup