ZHCSIN2C August 2018 – December 2018 TMUX1208 , TMUX1209
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information
- 7.5 Electrical Characteristics (VDD = 5 V ±10 %)
- 7.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
- 7.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
- 7.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
- 7.9 Typical Characteristics
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
封裝選項
機械數據 (封裝 | 引腳)
散熱焊盤機械數據 (封裝 | 引腳)
- RSV|16
訂購信息
8.1.7 Charge Injection
The TMUX1208 and TMUX1209 have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 13 shows the setup used to measure charge injection from source (Sx) to drain (D).
Figure 13. Charge-Injection Measurement Setup