ZHCSJE1C February 2019 – December 2023 TMUX1111 , TMUX1112 , TMUX1113
PRODUCTION DATA
- 1
- 1 特性
- 2 應用
- 3 說明
- 4 Device Comparison Table
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Electrical Characteristics (VDD = 5V ±10 %)
- 6.6 Electrical Characteristics (VDD = 3.3V ±10 %)
- 6.7 Electrical Characteristics (VDD = 1.8V ±10 %)
- 6.8 Electrical Characteristics (VDD = 1.2V ±10 %)
- 6.9 Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數據表獲取器件具體的封裝圖。
機械數據 (封裝 | 引腳)
- PW|16
- RSV|16
散熱焊盤機械數據 (封裝 | 引腳)
- RSV|16
訂購信息
7.6 Charge injection
The TMUX111x devices have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-6 shows the setup used to measure charge injection from source (Sx) to drain (Dx).
Figure 7-6 Charge-Injection
Measurement Setup