ZHCSGW3A June 2017 – October 2017 TLV760
PRODUCTION DATA.
| MIN | MAX | UNIT | |
|---|---|---|---|
| Input voltage (IN to GND) | –0.3 | 35 | V |
| Output Voltage (OUT) | VIN + 0.3 | V | |
| Output Current | Internally limited(2) | mA | |
| Junction temperature | –40 | 150 | °C |
| Storage temperature, Tstg | −65 | 150 | °C |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
| MIN | MAX | UNIT | |
|---|---|---|---|
| Maximum input voltage (IN to GND) | 30 | V | |
| Output current (IOUT) | 100 | mA | |
| Input and output capacitor (COUT) | 0.1 | µF | |
| Junction temperature, TJ | –40 | 125 | °C |
| THERMAL METRIC(1) | TLV760 | UNIT | |
|---|---|---|---|
| DBZ (SOT-23) | |||
| 3 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 275.2 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 92.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 56.8 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.9 | °C/W |
| ψJB | Junction-to-board characterization parameter | 55.6 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VOUT | Output voltage accuracy | VIN = VOUT(NOM)+ 1.5 V, 1 mA ≤ IOUT ≤ 100 mA |
–4% | 4% | V | ||
| VIN = VOUT(NOM) + 1.5 V, 1 mA ≤ IOUT ≤ 100 mA, −40°C ≤ TJ ≤ 125°C |
–5% | 5% | |||||
| ΔV(ΔVIN) | Line regulation | VOUT(NOM) + 1.5 V ≤ VIN ≤ 30 V IOUT = 1 mA , −40°C ≤ TJ ≤ 125°C |
VOUT(NOM) = 3.3 V, 5 V | 10 | 30 | mV | |
| VOUT(NOM) = 12 V, 15 V | 14 | 45 | |||||
| ΔV(ΔIOUT) | Load regulation | VIN =VOUT(NOM) + 1.5 V , 10 mA ≤ IOUT ≤ 100 mA, −40°C ≤ TJ ≤ 125°C |
VOUT(NOM) = 3.3 V, 5 V | 20 | 45 | mV | |
| VOUT(NOM) = 12 V, 15 V | 45 | 80 | |||||
| IGND | Ground pin current | VOUT(NOM) + 1.5 V ≤ VIN ≤ 30 V, no load, −40°C ≤ TJ ≤ 125°C |
2 | 5 | mA | ||
| VDO | Dropout voltage | IOUT = 10 mA | 0.7 | 0.9 | V | ||
| IOUT = 10 mA , −40°C ≤ TJ ≤ 125°C | 1 | ||||||
| IOUT = 100 mA | 0.9 | 1.1 | |||||
| IOUT = 100 mA, −40°C ≤ TJ ≤ 125°C | 1.2 | ||||||
| TSD | Thermal shutdown temperature | 150 | °C | ||||
Figure 1. Dropout Voltage vs Load Current
Figure 3. Ground Pin Current vs Input Voltage
Figure 5. Ground Pin Current vs Load Current
Figure 7. Input Current vs Input Voltage
Figure 9. Output Voltage vs Input Voltage
Figure 13. Power Supply Rejection Ratio
Figure 15. DC Load Regulation
| CIN = 1 µF | COUT = 0.1 µF | VOUT = 3.3 V | ||
Figure 2. Dropout Voltage vs Junction Temperature
Figure 4. Ground Pin Current vs Input Voltage
Figure 6. Ground Pin Current vs Junction Temperature
Figure 8. Input Current vs Input Voltage
Figure 10. Output Voltage vs Input Voltage
Figure 14. Power Supply Rejection Ratio
| VOUT(Red) = 3.3 V | IOUT(Black) = 100 mA | |