ZHCS918A May 2012 – December 2014 TLV61220
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用范圍
- 3 說明
- 4 典型應(yīng)用電路原理圖
- 5 修訂歷史記錄
- 6 Device Options
- 7 Pin Configuration and Functions
- 8 Specifications
- 9 Parameter Measurement Information
- 10Detailed Description
- 11Application and Implementation
- 12Power Supply Recommendations
- 13Layout
- 14器件和文檔支持
- 15機(jī)械、封裝和可訂購信息
封裝選項
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DBV|6
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN | Input voltage on VBAT, SW, VOUT, EN, FB | –0.3 | 7.5 | V |
| TJ | Operating junction temperature | –40 | 150 | °C |
| Tstg | Storage temperature | –65 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
8.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Supply voltage at VIN | 0.7 | 5.5 | V | |
| TA | Operating free air temperature range | –40 | 85 | °C | |
| TJ | Operating virtual junction temperature range | –40 | 125 | °C | |
8.4 Thermal Information
| THERMAL METRIC(1) | TLV61220 | UNIT | |
|---|---|---|---|
| DBV | |||
| 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 185.7 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 124.3 | |
| RθJB | Junction-to-board thermal resistance | 31.3 | |
| ψJT | Junction-to-top characterization parameter | 22.9 | |
| ψJB | Junction-to-board characterization parameter | 30.8 | |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | |
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
over recommended free-air temperature range and over recommended input voltage range (typical at an ambient temperature range of 25°C) (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| DC/DC STAGE | |||||||
| VIN | Input voltage range | 0.7 | 5.5 | V | |||
| VIN | Minimum input voltage at startup | RLoad ≥ 150 Ω | 0.7 | V | |||
| VOUT | TLV61220 output voltage range | VIN < VOUT | 1.8 | 5.5 | V | ||
| VFB | TLV61220 feedback voltage | 483 | 500 | 513 | mV | ||
| ILH | Inductor current ripple | 200 | mA | ||||
| ISW | switch current limit | VOUT = 3.3 V, VIN = 1.2 V, TA = 25 °C | 220 | 400 | mA | ||
| VOUT = 3.3 V, TA = -40°C to 85 °C | 180 | 400 | mA | ||||
| VOUT = 3.3 V, TA = 0°C to 85 °C | 200 | 400 | mA | ||||
| RDS(on) | Rectifying switch on resistance, HSD | VOUT = 3.3 V | 1000 | mΩ | |||
| VOUT = 5 V | 700 | mΩ | |||||
| Main switch on resistance, LSD | VOUT = 3.3 V | 600 | mΩ | ||||
| VOUT = 5 V | 550 | mΩ | |||||
| Line regulation | VIN < VOUT | 0.5% | |||||
| Load regulation | VIN < VOUT | 0.5% | |||||
| IQ | Quiescent current | VIN | IO = 0 mA, VEN = VIN = 1.2 V, VOUT = 3.3 V |
0.5 | 0.9 | μA | |
| VOUT | 5 | 7.5 | μA | ||||
| ISD | Shutdown current | VIN | VEN = 0 V, VIN = 1.2 V, VOUT ≥ VIN | 0.2 | 0.5 | μA | |
| ILKG | Leakage current into VOUT | VEN = 0 V, VIN = 1.2 V, VOUT = 3.3 V | 1 | μA | |||
| Leakage current into SW | VEN = 0 V, VIN = 1.2 V, VSW = 1.2 V, VOUT ≥ VIN | 0.01 | 0.2 | μA | |||
| IFB | TLV61220 Feedback input current | VFB = 0.5 V | 0.01 | μA | |||
| IEN | EN input current | Clamped on GND or VIN (VIN < 1.5 V) | 0.005 | 0.1 | μA | ||
| CONTROL STAGE | |||||||
| VIL | EN input low voltage | VIN ≤ 1.5 V | 0.2 × VIN | V | |||
| VIH | EN input high voltage | VIN ≤ 1.5 V | 0.8 × VIN | V | |||
| VIL | EN input low voltage | 5 V > VIN > 1.5 V | 0.4 | V | |||
| VIH | EN input high voltage | 5 V > VIN > 1.5 V | 1.2 | V | |||
| VUVLO | Undervoltage lockout threshold for turn off | VIN decreasing | 0.5 | 0.7 | V | ||
| Overvoltage protection threshold | 5.5 | 7.5 | V | ||||
| Overtemperature protection | 140 | °C | |||||
| Overtemperature hysteresis | 20 | °C | |||||
8.6 Typical Characteristics
Table 1. Table of Graphs
| FIGURE | ||
|---|---|---|
| Output Current | Input Voltage, ISW = 330 mA, Minimum ISW= 200 mA, VO = 1.8V | Figure 1 |
| Input Voltage, ISW = 400 mA, Minimum ISW = 200 mA, VO = 3.3V | Figure 2 | |
| Input Voltage, ISW = 380 mA, Minimum ISW = 200 mA, VO = 5V | Figure 3 | |
| Efficiency | vs Output Current, VO = 1.8 V, VI = [0.7 V; 1.2 V; 1.5 V] | Figure 4 |
| vs Output Current, VO = 3.3 V, VI = [0.7 V; 1.2 V; 2.4V; 3V] | Figure 5 | |
| vs Output Current, VO = 5 V, VI = [0.7 V; 1.2 V; 3.6V; 4.2V] | Figure 6 | |
| Efficiency | vs Input Voltage, VO = 1.8 V, IO = [100µA; 1mA ; 10mA; 50mA] | Figure 7 |
| vs Input Voltage, VO = 3.3 V, IO = [100µA; 1mA ; 10mA; 50mA] | Figure 8 | |
| vs Input Voltage, VO = 5 V, IO = [100µA; 1mA ; 10mA; 50mA] | Figure 9 | |
| Output Voltage | vs Output Current, VO = 1.8 V, VI = [0.7 V; 1.2 V] | Figure 10 |
| vs Output Current, VO = 3.3 V, VI = [0.7 V; 1.2 V; 2.4 V] | Figure 11 |
| VO = 1.8 V |
| VO = 5 V |
| VO = 3.3 V |
