ZHCSOI1O august 2009 – july 2023 SN65HVD3082E , SN65HVD3085E , SN65HVD3088E , SN75HVD3082E
PRODUCTION DATA
The SNx5HVD308xE provides internal biasing of the receiver input thresholds for open-circuit, bus-idle, or short-circuit fail-safe conditions. It features a typical hysteresis of 30 mV in order to improve noise immunity. Internal ESD protection circuits protect the transceiver bus terminals against ±15-kV Human Body Model (HBM) electrostatic discharges.
The devices protect themselves against damage due to overtemperature conditions, through the use of a thermal shutdown feature. Thermal shutdown is entered at 165°C (nominal) and causes the device to enter a low-power state with high-impedance outputs.