ZHCSPC1P February 2002 – February 2022 SN65HVD10 , SN65HVD11 , SN65HVD12 , SN75HVD10 , SN75HVD11 , SN75HVD12
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information
- 7.5 Driver Electrical Characteristics
- 7.6 Receiver Electrical Characteristics
- 7.7 Power Dissipation Characteristics
- 7.8 Driver Switching Characteristics
- 7.9 Receiver Switching Characteristics
- 7.10 Dissipation Ratings
- 7.11 Typical Characteristics
- 8 Parameter Measurement Information
- 9 Detailed Description
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
13.6 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |