SCES366L August 2001 – October 2015 SN74LVC3G34
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機械數(shù)據(jù) (封裝 | 引腳)
- DCU|8
- YZP|8
- DCT|8
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | Supply voltage | –0.5 | 6.5 | V | |
| VI | Input voltage(2) | –0.5 | 6.5 | V | |
| VO | Voltage applied to any output in the high-impedance or power-off state(2) | –0.5 | 6.5 | V | |
| VO | Voltage applied to any output in the high or low state(2)(3) | –0.5 | VCC + 0.5 | V | |
| IIK | Input clamp current | VI < 0 | –50 | mA | |
| IOK | Output clamp current | VO < 0 | –50 | mA | |
| IO | Continuous output current | ±50 | mA | ||
| Continuous current through VCC or GND | ±100 | mA | |||
| TJ | Junction temperature | 150 | °C | ||
| Tstg | Storage temperature | -65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.
6.2 ESD Ratings
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | 2500 | V | |
| Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | 1500 | ||||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions(1)
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | Supply voltage | Operating | 1.65 | 5.5 | V |
| Data retention only | 1.5 | ||||
| VIH | High-level input voltage | VCC = 1.65 V to 1.95 V | 0.65 × VCC | V | |
| VCC = 2.3 V to 2.7 V | 1.7 | ||||
| VCC = 3 V to 3.6 V | 2 | ||||
| VCC = 4.5 V to 5.5 V | 0.7 × VCC | ||||
| VIL | Low-level input voltage | VCC = 1.65 V to 1.95 V | 0.35 × VCC | V | |
| VCC = 2.3 V to 2.7 V | 0.7 | ||||
| VCC = 3 V to 3.6 V | 0.8 | ||||
| VCC = 4.5 V to 5.5 V | 0.3 × VCC | ||||
| VI | Input voltage | 0 | 5.5 | V | |
| VO | Output voltage | 0 | VCC | V | |
| IOH | High-level output current | VCC = 1.65 V | –4 | mA | |
| VCC = 2.3 V | –8 | ||||
| VCC = 3 V | –16 | ||||
| –24 | |||||
| VCC = 4.5 V | –32 | ||||
| IOL | Low-level output current | VCC = 1.65 V | 4 | mA | |
| VCC = 2.3 V | 8 | ||||
| VCC = 3 V | 16 | ||||
| 24 | |||||
| VCC = 4.5 V | 32 | ||||
| Δt/Δv | Input transition rise or fall rate | VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V | 20 | ns/V | |
| VCC = 3.3 V ± 0.3 V | 10 | ||||
| VCC = 5 V ± 0.5 V | 5 | ||||
| TA | Operating free-air temperature | DCT, DCU Package | –40 | 125 | °C |
| YZP Package | -40 | 85 | |||
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.
6.4 Thermal Information
| THERMAL METRIC(1) | SN74LVC3G34 | UNIT | |||
|---|---|---|---|---|---|
| DCT (SM8) | DCU (VSSOP) | YZP (DSBGA) | |||
| 8 PINS | 8 PINS | 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 220 | 227 | 140 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | VCC | MIN | TYP(1) | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|---|
| VOH | IOH = –100 µA | 1.65 V to 5.5 V | VCC – 0.1 | V | ||||
| IOH = –4 mA | 1.65 V | 1.2 | ||||||
| IOH = –8 mA | 2.3 V | 1.9 | ||||||
| IOH = –16 mA | 3 V | 2.4 | ||||||
| IOH = –24 mA | 2.3 | |||||||
| IOH = –32 mA | 4.5 V | 3.8 | ||||||
| VOL | IOL = 100 µA | 1.65 V to 5.5 V | 0.1 | V | ||||
| IOL = 4 mA | 1.65 V | 0.45 | ||||||
| IOL = 8 mA | 2.3 V | 0.3 | ||||||
| IOL = 16 mA | 3 V | 0.4 | ||||||
| IOL = 24 mA | TA = –40°C to 85°C | 3 V | 0.55 | |||||
| TA = –40°C to 125°C | 0.75 | |||||||
| IOL = 32 mA | TA = –40°C to 85°C | 4.5 V | 0.55 | |||||
| TA = –40°C to 125°C | 0.75 | |||||||
| II | A inputs | VI = 5.5 V or GND | 0 to 5.5 V | ±5 | µA | |||
| Ioff | VI or VO = 5.5 V | 0 | ±10 | µA | ||||
| ICC | VI = 5.5 V or GND, | IO = 0 | 1.65 V to 5.5 V | 10 | µA | |||
| ΔICC | One input at VCC – 0.6 V, Other inputs at VCC or GND |
3 V to 5.5 V | 500 | µA | ||||
| CI | VI = VCC or GND | TA = –40°C to 85°C | 3.3 V | 3.5 | pF | |||
(1) All typical values are at VCC = 3.3 V, TA = 25°C.
6.6 Switching Characteristics
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)| PARAMETER | FROM (INPUT) |
TO (OUTPUT) |
OPERATING FREE-AIR TEMPERATURE (TA) | VCC | MIN | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| tpd | A | Y | –40°C to 85°C | VCC = 1.8 V ± 0.15 V | 3.2 | 7.9 | ns |
| VCC = 2.5 V ± 0.2 V | 1.5 | 4.4 | |||||
| VCC = 3.3 V ± 0.3 V | 1.4 | 4.1 | |||||
| VCC = 5 V ± 0.5 V | 1.1 | 3.2 | |||||
| tpd | A | Y | –40°C to 125°C | VCC = 1.8 V ± 0.15 V | 3.2 | 8.9 | ns |
| VCC = 2.5 V ± 0.2 V | 1.5 | 5.4 | |||||
| VCC = 3.3 V ± 0.3 V | 1.4 | 5.1 | |||||
| VCC = 5 V ± 0.5 V | 1.1 | 3.8 |
6.7 Operating Characteristics
TA = 25°C| PARAMETER | TEST CONDITIONS | VCC | TYP | UNIT | |
|---|---|---|---|---|---|
| Cpd | Power dissipation capacitance | f = 10 MHz | VCC = 1.8 V | 19 | pF |
| VCC = 2.5 V | 19 | ||||
| VCC = 3.3 V | 19 | ||||
| VCC = 5 V | 21 | ||||
6.8 Typical Characteristics
Figure 1. TPD Across Temperature at 3.3-V VCC