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SCES381N January 2002 – January 2015 SN74LVC2G17 , SN74LVC2G17

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRY|6
- MPDS221F
DSF|6
- MPDS301G
YZP|6
- MXBG347
DCK|6
- MPDS114F
DBV|6
- MPDS026Q

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRY|6
- QFND138E

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage range		–0.5	6.5	V
V_I	Input voltage range⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high-impedance or power-off state⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high or low state⁽²⁾⁽³⁾		–0.5	V_CC + 0.5	V
I_IK	Input clamp current	V_I< 0		–50	mA
I_OK	Output clamp current	V_O < 0		–50	mA
I_O	Continuous output current			±50	mA
	Continuous current through V_CC or GND			±100	mA
T_J	Junction temperature under bias			150	°C
T_stg	Storage temperature range		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3) The value of V_CC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

		VALUE	UNIT
V_ESD⁽¹⁾	Human-Body Model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽²⁾	2000	V
V_ESD⁽¹⁾	Charged-Device Model (CDM), per JEDEC specification JESD22-C101, all pins⁽³⁾	1000	V

(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in to the device.

(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage	Operating	1.65	5.5	V
V_I	Input voltage		0	5.5	V
V_O	Output voltage		0	V_CC	V
I_OH	High-level output current	V_CC = 1.65 V		–4	mA
		V_CC = 2.3 V		–8
		V_CC = 3 V		–16
		V_CC = 3 V		–24
		V_CC = 4.5 V		–32
I_OL	Low-level output current	V_CC = 1.65 V		4	mA
		V_CC = 2.3 V		8
		V_CC = 3 V		16
		V_CC = 3 V		24
		V_CC = 4.5 V		32
T_A	Operating free-air temperature		–40	125	°C

(1) All unused inputs of the device must be held at V_CCor GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

6.3 Thermal Information

THERMAL METRIC⁽¹⁾		SN74LVC2G17					UNIT
		DBV	DCK	YZP	DRY	DSF
		6 PINS
R_θJA	Junction-to-ambient thermal resistance⁽²⁾	165	259	123	234	300	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) The package thermal impedance is calculated in accordance with JESD 51-7.

Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		V_CC	–40°C to 85°C			–40°C to 125°C			UNIT
PARAMETER		TEST CONDITIONS		V_CC	MIN	TYP⁽¹⁾	MAX	MIN	TYP⁽¹⁾	MAX	UNIT
V_T+ Positive-going input threshold voltage				1.65 V	0.7		1.4	0.7		1.4	V
				2.3 V	1.0		1.7	1.0		1.7
				3 V	1.3		2.0	1.3		2.0
				4.5 V	1.9		3.1	1.9		3.1
				5.5 V	2.2		3.7	2.2		3.7
V_T– Negative-going input threshold voltage				1.65 V	0.3		0.7	0.3		0.7	V
				2.3 V	0.4		1	0.4		1.0
				3 V	0.8		1.3	0.8		1.3
				4.5 V	1.1		2	1.1		2.0
				5.5 V	1.4		2.5	1.4		2.5
ΔV_T Hysteresis (V_T+– V_T–)				1.65 V	0.3		0.8	0.3		0.8	V
				2.3 V	0.4		0.9	0.35		0.9
				3 V	0.4		1.1	0.4		1.1
				4.5 V	0.6		1.3	0.6		1.3
				5.5 V	0.7		1.4	0.7		1.4
V_OH		I_OH = –100 μA		1.65 V to 5.5 V	V_CC – 0.1			V_CC – 0.1			V
		I_OH = –4 mA		1.65 V	1.2			1.2
		I_OH = –8 mA		2.3 V	1.9			1.9
		I_OH = –16 mA		3 V	2.4			2.4
		I_OH = –24 mA		3 V	2.3			2.3
		I_OH = –32 mA		4.5 V	3.8			3.8
V_OL		I_OL = 100 μA		1.65 V to 5.5 V			0.1			0.1	V
		I_OL = 4 mA		1.65 V			0.45			0.45
		I_OL = 8 mA		2.3 V			0.3			0.3
		I_OL = 16 mA		3 V			0.4			0.4
		I_OL = 24 mA		3 V			0.55			0.55
		I_OL = 32 mA		4.5 V			0.55			0.55
I_I	A input	V_I = 5.5 V or GND		0 to 5.5 V			±5			±5	μA
I_off		V_I or V_O = 5.5 V		0			±10			±10	μA
I_CC		V_I = 5.5 V or GND,	I_O = 0	1.65 V to 5.5 V			10			10	μA
ΔI_CC		One input at V_CC – 0.6 V, Other inputs at V_CC or GND		3 V to 5.5 V			500			500	μA
C_i		V_I = V_CC or GND		3.3 V		4			4		pF

(1) All typical values are at V_CC = 3.3 V, T_A = 25°C.

Switching Characteristics, –40°C to 85°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	–40°C to 85°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
t_pd	A	Y	3.9	9.3	1.9	5.7	2.2	5.4	1.5	4.3	ns

6.4 Switching Characteristics, –40°C to 125°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	–40°C to 125°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
t_pd	A	Y	3.9	9.8	1.9	6.2	2.2	5.9	1.5	4.8	ns

Operating Characteristics

T_A= 25°C

PARAMETER		TEST CONDITIONS	V_CC = 1.8 V	V_CC = 2.5 V	V_CC = 3.3 V	V_CC = 5 V	UNIT
PARAMETER		TEST CONDITIONS	TYP	TYP	TYP	TYP	UNIT
C_pd	Power dissipation capacitance	f = 10 MHz	17	18	19	21	pF

6.5 Typical Characteristics

Figure 1. Propagation Delay (Low to High Transition)
vs Load Capacitance

Figure 2. Propagation Delay (High to Low Transition)
vs Load Capacitance