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SCES416N December 2002 – January 2017 SN74LVC1G97

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRY|6
- MPDS221F
DSF|6
- MPDS301G
YZP|6
- MXBG347
DCK|6
- MPDS114F
DRL|6
- MPDS159I
DBV|6
- MPDS026Q

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRY|6
- QFND138E

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		–0.5	6.5	V
V_I	Input voltage⁽²⁾		–0.5	6.5	V
V_O	Voltage applied to any output in the high-impedance or power-off state⁽²⁾		–0.5	6.5	V
V_O	Voltage applied to any output in the high or low state⁽²⁾⁽³⁾		–0.5	V_CC + 0.5	V
I_IK	Input clamp current	V_I < 0 V		–50	mA
I_OK	Output clamp current	V_O < 0 V		–50	mA
I_O	Continuous output current			±50	mA
	Continuous current through V_CC or GND			±100	mA
T_J	Junction temperature			150	°C
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.

(3) The value of V_CC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101\⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

See ⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage	Operating	1.65	5.5	V
V_CC	Supply voltage	Data retention only	1.5		V
V_I	Input voltage		0	5.5	V
V_O	Output voltage		0	V_CC	V
I_OH	High-level output current	V_CC = 1.65 V		–4	mA
		V_CC = 2.3 V		–8
		V_CC = 3 V		–16
		V_CC = 3 V		–24
		V_CC = 4.5 V		–32
I_OL	Low-level output current	V_CC = 1.65 V		4	mA
		V_CC = 2.3 V		8
		V_CC = 3 V		16
		V_CC = 3 V		24
		V_CC = 4.5 V		32
T_A	Operating free-air temperature	BGA package	–40	85	°C
T_A	Operating free-air temperature	All other packages	–40	125	°C

(1) All unused inputs of the device must be held at V_CC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		SN74LVC1G97				UNIT
		DBV (SOT-23)	DCK (SC70)	DRL (SOT)	YZP (DSBGA)
		6 PINS	6 PINS	6 PINS	6 PINS
R_θJA	Junction-to-ambient thermal resistance	165	259	142	123	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER	TEST CONDITIONS	V_CC	–40°C TO +85°C			–40°C TO +125°C			UNIT
PARAMETER	TEST CONDITIONS	V_CC	MIN	TYP⁽¹⁾	MAX	MIN	TYP⁽¹⁾	MAX	UNIT
V_T+ Positive-going input threshold voltage		1.65 V	0.79		1.16	0.79		1.16	V
		2.3 V	1.11		1.56	1.11		1.56
		3 V	1.5		1.87	1.5		1.87
		4.5 V	2.16		2.74	2.16		2.74
		5.5 V	2.61		3.33	2.61		3.33
V_T– Negative-going input threshold voltage		1.65 V	0.35		0.62	0.35		0.62	V
		2.3 V	0.58		0.87	0.58		0.87
		3 V	0.84		1.19	0.84		1.19
		4.5 V	1.41		1.9	1.41		1.9
		5.5 V	1.87		2.29	1.87		2.29
ΔV_T Hysteresis (V_T+ – V_T–)		1.65 V	0.3		0.62	0.3		0.62	V
		2.3 V	0.4		0.8	0.4		0.8
		3 V	0.53		0.87	0.53		0.87
		4.5 V	0.71		1.04	0.71		1.04
		5.5 V	0.71		1.11	0.71		1.11
V_OH	I_OH = –100 µA	1.65 V to 5.5 V	V_CC – 0.1			V_CC – 0.1			V
	I_OH = –4 mA	1.65 V	1.2			1.2
	I_OH = –8 mA	2.3 V	1.9			1.9
	I_OH = –16 mA	3 V	2.4			2.4
	I_OH = –24 mA	3 V	2.3			2.3
	I_OH = –32 mA	4.5 V	3.8			3.8
V_OL	I_OL = 100 µA	1.65 V to 5.5 V			0.1			0.1	V
	I_OL = 4 mA	1.65 V			0.45			0.45
	I_OL = 8 mA	2.3 V			0.3			0.3
	I_OL = 16 mA	3 V			0.4			0.45
	I_OL = 24 mA	3 V			0.55			0.55
	I_OL = 32 mA	4.5 V			0.55			0.58
I_I	V_I = 5.5 V or GND	0 to 5.5 V			±5			±5	µA
I_off	V_I or V_O = 5.5 V	0			±10			±10	µA
I_CC	V_I = 5.5 V or GND, I_O = 0	1.65 V to 5.5 V			10			10	µA
ΔI_CC	One input at V_CC – 0.6 V, Other inputs at V_CC or GND	3 V to 5.5 V			500			500	µA
C_I	V_I = V_CC or GND	3.3 V		3.5			3.5		pF

(1) All typical values are at V_CC = 3.3 V, T_A = 25°C.

6.6 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	–40°C TO 85°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
t_pd	Any In	Y	3.2	14.4	2	8.3	1.5	6.3	1.1	5.1	ns

6.7 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	–40°C TO 125°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
t_pd	Any In	Y	3.2	16.4	2	9.3	1.5	7.3	1.1	6.1	ns

6.8 Operating Characteristics

T_A = 25°C

PARAMETER		TEST CONDITIONS	V_CC = 1.8 V	V_CC = 2.5 V	V_CC = 3.3 V	V_CC = 5 V	UNIT
PARAMETER		TEST CONDITIONS	TYP	TYP	TYP	TYP	UNIT
C_pd	Power dissipation capacitance	f = 10 MHz	22	23	23	26	pF

6.9 Typical Characteristics

Figure 1. Power Dissipation Capacitance vs Power Supply Voltage