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ZHCSH06S April 1999 – November 2016 SN74LVC1G80

PRODUCTION DATA.

封裝選項

請參考 PDF 數據表獲取器件具體的封裝圖。

機械數據 (封裝 | 引腳)

DBV|5
DCK|5
YZP|5

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		–0.5	6.5	V
V_I	Input voltage⁽²⁾		–0.5	6.5	V
V_O	Voltage applied to any output in the high-impedance or power-off state⁽²⁾		–0.5	6.5	V
V_O	Voltage applied to any output in the high or low state⁽²⁾⁽³⁾		–0.5	V_CC + 0.5	V
I_IK	Input clamp current	V_I < 0		–50	mA
I_OK	Output clamp current	V_O < 0		–50	mA
I_O	Continuous output current			±50	mA
	Continuous current through V_CC or GND			±100	mA
T_J	Junction temperature			150	°C
T_stg	Storage temperature		–65	150	ºC

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

(3) The value of V_CC is provided in Recommended Operating Conditions.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage	Operating	1.65	5.5	V
V_CC	Supply voltage	Data retention only	1.5		V
V_IH	High-level input voltage	V_CC = 1.65 V to 1.95 V	0.65 × V_CC		V
		V_CC = 2.3 V to 2.7 V	1.7
		V_CC = 3 V to 3.6 V	2
		V_CC = 4.5 V to 5.5 V	0.7 × V_CC
V_IL	Low-level input voltage	V_CC = 1.65 V to 1.95 V		0.35 × V_CC	V
		V_CC = 2.3 V to 2.7 V		0.7
		V_CC = 3 V to 3.6 V		0.8
		V_CC = 4.5 V to 5.5 V		0.3 × V_CC
V_I	Input voltage		0	5.5	V
V_O	Output voltage		0	V_CC	V
I_OH	High-level output current	V_CC = 1.65 V		–4	mA
		V_CC = 2.3 V		–8
		V_CC = 3 V		–16
		V_CC = 3 V		–24
		V_CC = 4.5 V		–32
I_OL	Low-level output current	V_CC = 1.65 V		4	mA
		V_CC = 2.3 V		8
		V_CC = 3 V		16
		V_CC = 3 V		24
		V_CC = 4.5 V		32
Δt/Δv	Input transition rise or fall rate	V_CC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V		20	ns/V
		V_CC = 3.3 V ± 0.3 V		10
		V_CC = 5 V ± 0.5 V		5
T_J	Junction temperature			150	°C
T_A	Operating free-air temperature	DBV and DCK packages	–40	125	°C
T_A	Operating free-air temperature	YZP package	–40	85	°C

(1) All unused inputs of the device must be held at V_CCor GND to ensure proper device operation. See the TI application report, Implications of Slow or Floating CMOS Inputs (SCBA004).

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		SN74LVC1G80			UNIT
		DBV (SOT-23)	DCK (SC70)	YZP (DSBGA)
		5 PINS	5 PINS	5 PINS
R_θJA	Junction-to-ambient thermal resistance	243.4	278.9	136.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	179	121.3	1.3	°C/W
R_θJB	Junction-to-board thermal resistance	77.6	65.6	32.6	°C/W
ψ_JT	Junction-to-top characterization parameter	58.4	7.5	6.3	°C/W
ψ_JB	Junction-to-board characterization parameter	77	64.9	32.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		V_CC	MIN	TYP⁽¹⁾	MAX	UNIT
V_OH		I_OH = –100 µA		1.65 V to 5.5 V	V_CC – 0.1			V
		I_OH = –4 mA		1.65 V	1.2
		I_OH = –8 mA		2.3 V	1.9
		I_OH = –16 mA		3 V	2.4
		I_OH = –24 mA		3 V	2.3
		I_OH = –32 mA		4.5 V	3.8
V_OL		I_OL = 100 µA		1.65 V to 5.5 V			0.1	V
		I_OL = 4 mA		1.65 V			0.45
		I_OL = 8 mA		2.3 V			0.3
		I_OL = 16 mA		3 V			0.4
		I_OL = 24 mA		3 V			0.55
		I_OL = 32 mA		4.5 V			0.55
I_I	CLK or D inputs	V_I = 5.5 V or GND		0 to 5.5 V			±10	µA
I_off		V_I or V_O = 5.5 V		0			±10	µA
I_CC		V_I = 5.5 V or GND,	I_O = 0	1.65 V to 5.5 V			10	µA
ΔI_CC		One input at V_CC – 0.6 V, Other inputs at V_CC or GND		3 V to 5.5 V			500	µA
C_i		V_I = V_CC or GND	T_A = –40°C to 85°C	3.3 V		3.5		pF

(1) All typical values are at V_CC = 3.3 V, T_A = 25°C.

6.6 Timing Requirements: T_A = –40°C to +85°C

over recommended operating free-air temperature range, T_A = –40°C to +85°C (unless otherwise noted) (see Figure 3)

			V_CC	MIN	MAX	UNIT
f_clock	Clock frequency		V_CC = 1.8 V ± 0.15 V		160	MHz
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5.5 V ± 0.5 V
t_w	Pulse duration, CLK high or low		V_CC = 1.8 V ± 0.15 V	2.5		ns
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5.5 V ± 0.5 V
t_su	Setup time before CLK↑	Data high	V_CC = 1.8 V ± 0.15 V	2.3		ns
			V_CC = 2.5 V ± 0.2 V	1.5
			V_CC = 3.3 V ± 0.3 V	1.3
			V_CC = 5.5 V ± 0.5 V	1.1
		Data low	V_CC = 1.8 V ± 0.15 V	2.5
			V_CC = 2.5 V ± 0.2 V	1.5
			V_CC = 3.3 V ± 0.3 V	1.3
			V_CC = 5.5 V ± 0.5 V	1.1
t_h	Hold time, data after CLK↑		V_CC = 1.8 V ± 0.15 V	0		ns
			V_CC = 2.5 V ± 0.2 V	0.2
			V_CC = 3.3 V ± 0.3 V	0.9
			V_CC = 5.5 V ± 0.5 V	0.4

6.7 Timing Requirements: T_A = –40°C to +125°C

over recommended operating free-air temperature range, T_A = –40°C to +125°C (unless otherwise noted) (see Figure 3)

			V_CC	MIN	MAX	UNIT
f_clock	Clock frequency		V_CC = 1.8 V ± 0.15 V		160	MHz
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5.5 V ± 0.5 V
t_w	Pulse duration, CLK high or low		V_CC = 1.8 V ± 0.15 V	2.5		ns
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5.5 V ± 0.5 V
t_su	Setup time before CLK↑	Data high	V_CC = 1.8 V ± 0.15 V	2.3		ns
			V_CC = 2.5 V ± 0.2 V	1.5
			V_CC = 3.3 V ± 0.3 V	1.3
			V_CC = 5.5 V ± 0.5 V	1.1
		Data low	V_CC = 1.8 V ± 0.15 V	2.5
			V_CC = 2.5 V ± 0.2 V	1.5
			V_CC = 3.3 V ± 0.3 V	1.3
			V_CC = 5.5 V ± 0.5 V	1.1
t_h	Hold time, data after CLK↑		V_CC = 1.8 V ± 0.15 V	0		ns
			V_CC = 2.5 V ± 0.2 V	0.2
			V_CC = 3.3 V ± 0.3 V	0.9
			V_CC = 5.5 V ± 0.5 V	0.4

6.8 Switching Characteristics: T_A = –40°C to +85°C, C_L = 15 pF

over recommended operating free-air temperature range, T_A = –40°C to +85°C, C_L = 15 pF (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC	MIN	MAX	UNIT
f_max			V_CC = 1.8 V ± 0.15 V	160		MHz
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5 V ± 0.5 V
t_pd	CLK	Q	V_CC = 1.8 V ± 0.15 V	3	9.1	ns
			V_CC = 2.5 V ± 0.2 V	1.5	6
			V_CC = 3.3 V ± 0.3 V	1.3	4.2
			V_CC = 5 V ± 0.5 V	1.1	3.8

6.9 Switching Characteristics: T_A = –40°C to +85°C, C_L = 30 pF or 50 pF

over recommended operating free-air temperature range, T_A = –40°C to +85°C, C_L = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC	MIN	MAX	UNIT
f_max			V_CC = 1.8 V ± 0.15 V	160		MHz
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5 V ± 0.5 V
t_pd	CLK	Q	V_CC = 1.8 V ± 0.15 V	4.4	9.9	ns
			V_CC = 2.5 V ± 0.2 V	2.3	7
			V_CC = 3.3 V ± 0.3 V	2	5.2
			V_CC = 5 V ± 0.5 V	1.3	4.5

6.10 Switching Characteristics: T_A = –40°C to +125°C, C_L = 30 pF or 50 pF

over recommended operating free-air temperature range, T_A = –40°C to +125°C, C_L = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC	MIN	MAX	UNIT
f_max			V_CC = 1.8 V ± 0.15 V	160		MHz
			V_CC = 2.5 V ± 0.2 V
			V_CC = 3.3 V ± 0.3 V
			V_CC = 5 V ± 0.5 V
t_pd	CLK	Q	V_CC = 1.8 V ± 0.15 V	4.4	12.5	ns
			V_CC = 2.5 V ± 0.2 V	2.3	8.5
			V_CC = 3.3 V ± 0.3 V	2	6
			V_CC = 5 V ± 0.5 V	1.3	5.5

6.11 Operating Characteristics

T_A= 25°C

PARAMETER		TEST CONDITIONS	V_CC	TYP	UNIT
C_pd	Power dissipation capacitance	f = 10 MHz	V_CC = 1.8 V	24	pF
			V_CC = 2.5 V	24
			V_CC = 3.3 V	25
			V_CC = 5 V	27

6.12 Typical Characteristics

This plot shows the different I_CC values for various voltages on the data input (D). Voltage sweep on the input is from 0 V to 6.5 V.

SN74LVC1G80 SCES885_ICCvsInputVoltage-1_8V-2_5V.gif

VCC = 1.8 V

VCC = 2.5 V

Figure 1. Supply Current (I_CC) vs Data (D) Input Voltage

SN74LVC1G80 SCES885_ICCvsInputVoltage-3_3V-5V.gif

VCC = 3.3 V

VCC = 5 V

Figure 2. Supply Current (I_CC) vs Data (D) Input Voltage