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ZHCSG91U April 1999 – April 2017 SN74LVC1G79

PRODUCTION DATA.

封裝選項(xiàng)

請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DBV|5
DCK|5
DRL|5
YZP|5

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		–0.5	6.5	V
V_I	Input voltage⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high-impedance or power-off state⁽²⁾		–0.5	6.5	V
V_O	Voltage range applied to any output in the high or low state⁽²⁾⁽³⁾		–0.5	V_CC + 0.5	V
I_IK	Input clamp current	V_I < 0		–50	mA
I_OK	Output clamp current	V_O < 0		–50	mA
I_O	Continuous output current			±50	mA
	Continuous current through V_CC or GND			±100	mA
T_stg	Storage temperature		–65	150	°C
T_J	Junction temperature			150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3) The value of V_CCis provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		Machine Model (MM), A115-A	200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage	Operating	1.65	5.5	V
V_CC	Supply voltage	Data retention only	1.5		V
V_IH	High-level input voltage	V_CC = 1.65 V to 1.95 V	0.65 × V_CC		V
		V_CC = 2.3 V to 2.7 V	1.7
		V_CC = 3 V to 3.6 V	2
		V_CC = 4.5 V to 5.5 V	0.7 × V_CC
V_IL	Low-level input voltage	V_CC = 1.65 V to 1.95 V		0.35 × V_CC	V
		V_CC = 2.3 V to 2.7 V		0.7
		V_CC = 3 V to 3.6 V		0.8
		V_CC = 4.5 V to 5.5 V		0.3 × V_CC
V_I	Input voltage		0	5.5	V
V_O	Output voltage		0	V_CC	V
I_OH	High-level output current	V_CC = 1.65 V		–4	mA
		V_CC = 2.3 V		–8
		V_CC = 3 V		–16
		V_CC = 3 V		–24
		V_CC = 4.5 V		–32
I_OL	Low-level output current	V_CC = 1.65 V		4	mA
		V_CC = 2.3 V		8
		V_CC = 3 V		16
		V_CC = 3 V		24
		V_CC = 4.5 V		32
Δt/Δv	Input transition rise or fall rate	V_CC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V		20	ns/V
		V_CC = 3.3 V ± 0.3 V		10
		V_CC = 5 V ± 0.5 V		5
T_A	Operating free-air temperature		–40	125	°C

(1) All unused inputs of the device must be held at V_CC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		SN74LVC1G79				UNIT
		DBV (SOT-23)	DCK (SC70)	DRL (SOT)	YZP (DSBGA)
		5 PINS	5 PINS	5 PINS	5 PINS
R_θJA	Junction-to-ambient thermal resistance	247.2	277.6	294.3	144.4	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	154.5	179.5	129.9	1.3	°C/W
R_θJB	Junction-to-board thermal resistance	86.8	75.9	143.4	39.9	°C/W
ψ_JT	Junction-to-top characterization parameter	58.0	49.7	14.3	0.5	°C/W
ψ_JB	Junction-to-board characterization parameter	86.4	75.1	144.0	39.7	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		V_CC	T_A = –40°C to +85°C			T_A = –40°C to +125°C			UNIT
PARAMETER		TEST CONDITIONS		V_CC	MIN	TYP⁽¹⁾	MAX	MIN	TYP⁽¹⁾	MAX	UNIT
V_OH		I_OH = –100 µA		1.65 V to 5.5 V	V_CC – 0.1			V_CC – 0.1			V
		I_OH = –4 mA		1.65 V	1.2			1.2
		I_OH = –8 mA		2.3 V	1.9			1.9
		I_OH = –16 mA		3 V	2.4			2.4
		I_OH = –24 mA		3 V	2.3			2.3
		I_OH = –32 mA		4.5 V	3.8			3.8
V_OL		I_OL = 100 µA		1.65 V to 5.5 V			0.1			0.1	V
		I_OL = 4 mA		1.65 V			0.45			0.45
		I_OL = 8 mA		2.3 V			0.3			0.3
		I_OL = 16 mA		3 V			0.4			0.4
		I_OL = 24 mA		3 V			0.55			0.55
		I_OL = 32 mA		4.5 V			0.55			0.55
I_I	All inputs	V_I = 5.5 V or GND		0 to 5.5 V			±10			±5	µA
I_off		V_I or V_O = 5.5 V		0			±10			±10	µA
I_CC		V_I = 5.5 V or GND,	I_O = 0	1.65 V to 5.5 V			10			10	µA
ΔI_CC		One input at V_CC – 0.6 V, Other inputs at V_CC or GND		3 V to 5.5 V			500			500	µA
C_i		V_I = V_CC or GND		3.3 V		4			4		pF

(1) All typical values are at V_CC = 3.3 V, T_A = 25°C.

6.6 Timing Requirements: T_A = –40°C to +85°C

over operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER			T_A = –40°C to +85°C								UNIT
			V_CC = 1.8 ± 0.15 V		V_CC = 2.5 ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
f_clock	Clock frequency			160		160		160		160	MHz
t_w	Pulse duration, CLK high or low		2.5		2.5		2.5		2.5		ns
t_su	Setup time before CLK↑	Data high	2.2		1.4		1.3		1.2		ns
t_su	Setup time before CLK↑	Data low	2.6		1.4		1.3		1.2		ns
t_h	Hold time, data after CLK↑		0.3		0.4		1		0.5		ns

6.7 Timing Requirements: T_A = –40°C to +125°C

over operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER			T_A = –40°C to +125°C								UNIT
			V_CC = 1.8 ± 0.15 V		V_CC = 2.5 ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
f_clock	Clock frequency			160		160		160		160	MHz
t_w	Pulse duration, CLK high or low		2.5		2.5		2.5		2.5		ns
t_su	Setup time before CLK↑	Data high	2.2		1.4		1.3		1.2		ns
t_su	Setup time before CLK↑	Data low	2.6		1.4		1.3		1.2		ns
t_h	Hold time, data after CLK↑		0.3		0.4		1		0.5		ns

6.8 Switching Characteristics: C_L = 15 pF, T_A = –40°C to +85°C

over recommended operating free-air temperature range, C_L = 15 pF (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	T_A = –40°C to +85°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
f_max			160		160		160		160		MHz
t_pd	CLK	Q	2.5	9.1	1.2	6	1	4	0.8	3.8	ns

6.9 Switching Characteristics: C_L = 30 or 50 pF, T_A = –40°C to +85°C

over recommended operating free-air temperature range, C_L = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	T_A = –40°C to +85°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
f_max			160		160		160		160		MHz
t_pd	CLK	Q	3.9	9.9	2	7	1.7	5	1	4.5	ns

6.10 Switching Characteristics: C_L = 30 pF or 50 pF, T_A = –40°C to +125°C

over recommended operating free-air temperature range, C_L = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	T_A = –40°C to +125°C								UNIT
			V_CC = 1.8 V ± 0.15 V		V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		V_CC = 5 V ± 0.5 V
			MIN	MAX	MIN	MAX	MIN	MAX	MIN	MAX
f_max			160		160		160		160		MHz
t_pd	CLK	Q	3.9	12	2	8.5	1.7	6	1	5	ns

6.11 Operating Characteristics

T_A = 25°C

PARAMETER		TEST CONDITIONS	V_CC = 1.8 V	V_CC = 2.5 V	V_CC = 3.3 V	V_CC = 5 V	UNIT
PARAMETER		TEST CONDITIONS	TYP	TYP	TYP	TYP	UNIT
C_pd	Power dissipation capacitance	f = 10 MHz	26	26	27	30	pF

6.12 Typical Characteristics

This plot shows the different I_CC values for various voltages on the data input (D). Voltage sweep on the input is from 0 V to 6.5 V.

SN74LVC1G79 ICCvsInputVoltage-1_8V-2_5V.gif

VCC = 1.8 V

VCC = 2.5 V

Figure 1. Supply Current (I_CC) vs Data (D) Input Voltage

SN74LVC1G79 ICCvsInputVoltage-3_3V-5V.gif

VCC = 3.3 V

VCC = 5 V

Figure 2. Supply Current (I_CC) vs Data (D) Input Voltage