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ZHCSU09I July 2004 – February 2025 LP2981 , LP2981A

PRODUCTION DATA

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DBV|5
- MPDS018T

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

5.5 Electrical Characteristics

specified at T_J = 25 °C, V_IN = V_OUT(nom) + 1.0 V or VIN = 2.5 V (whichever is greater), I_OUT = 1 mA, V_ON/OFF = 2 V, C_IN = 1.0 μF, and C_OUT = 2.2 μF (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
?V_OUT	Output voltage tolerance	I_L = 1 mA	Legacy chip (Standard grade)	–1.25		1.25	%
			Legacy chip (A grade)	–0.75		0.75
			New chip	–0.5		0.5
		1 mA < I_L < 100 mA	Legacy chip (Standard grade)	–2.0		2.0
			Legacy chip (A grade)	–1.0		1.0
			New chip	–0.5		0.5
		1 mA < I_L < 100 mA, –40°C ≤ T_J≤ 125°C	Legacy chip (Standard grade)	–3.5		3.5
			Legacy chip (A grade)	–2.5		2.5
			New chip	–1		1
ΔV_OUT(ΔVIN)	Line regulation	V_O(NOM) + 1 V ≤ V_IN ≤ 16 V	Legacy chip		0.007	0.014	%/V
		V_O(NOM) + 1 V ≤ V_IN ≤ 16 V	New chip		0.002	0.014
		V_O(NOM) + 1 V ≤ V_IN ≤ 16 V, –40°C ≤ T_J ≤ 125°C	Legacy chip		0.007	0.032
		V_O(NOM) + 1 V ≤ V_IN ≤ 16 V, –40°C ≤ T_J ≤ 125°C	New chip		0.002	0.032
ΔV_OUT(ΔILOAD)	Load regulation	1 mA < I_L < 100 mA, –40°C ≤ T_J≤ 125°C, V_IN = V_O(NOM)+0.5 V	New chip		0.1	0.5	%/A
V_IN - V_OUT	Dropout voltage⁽¹⁾	I_OUT = 0 mA	Legacy chip		1	3	mV
		I_OUT = 0 mA	New chip		1	2.75
		I_OUT = 0 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			5
		I_OUT = 0 mA, –40°C ≤ T_J≤ 125°C	New chip			3
		I_OUT = 1 mA	Legacy chip		7	10
		I_OUT = 1 mA	New chip		11.5	14
		I_OUT = 1 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			15
		I_OUT = 1 mA, –40°C ≤ T_J≤ 125°C	New chip			17
		I_OUT = 25 mA	Legacy chip		70	100
		I_OUT = 25 mA	New chip		110	132
		I_OUT = 25 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			150
		I_OUT = 25 mA, –40°C ≤ T_J≤ 125°C	New chip			167
		I_OUT = 100 mA	Legacy chip		200	250
		I_OUT = 100 mA	New chip		160	175
		I_OUT = 100 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			375
		I_OUT = 100 mA, –40°C ≤ T_J≤ 125°C	New chip			218
I_GND	GND pin current	I_OUT = 0 mA	Legacy chip		65	95	μA
		I_OUT = 0 mA	New chip		69	95
		I_OUT = 0 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			125
		I_OUT = 0 mA, –40°C ≤ T_J≤ 125°C	New chip			123
		I_OUT = 1 mA	Legacy chip		80	110
		I_OUT = 1 mA	New chip		78	110
		I_OUT = 1 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			170
		I_OUT = 1 mA, –40°C ≤ T_J≤ 125°C	New chip			140
		I_OUT = 25 mA	Legacy chip		200	300
		I_OUT = 25 mA	New chip		225	295
		I_OUT = 25 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			550
		I_OUT = 25 mA, –40°C ≤ T_J≤ 125°C	New chip			345
		I_OUT = 100 mA	Legacy chip		600	1000
		I_OUT = 100 mA	New chip		620	790
		I_OUT = 100 mA, –40°C ≤ T_J≤ 125°C	Legacy chip			1700
		I_OUT = 100 mA, –40°C ≤ T_J≤ 125°C	New chip			950
		V_ON/OFF < 0.3 V, V_IN = 16 V	Legacy chip		0.01	0.8
		V_ON/OFF < 0.3 V, V_IN = 16 V	New chip		1.25	1.75
		V_ON/OFF < 0.15 V, V_IN = 16 V, –40°C ≤ T_J≤ 105°C	Legacy chip		0.05	2
		V_ON/OFF < 0.15 V, V_IN = 16 V, –40°C ≤ T_J≤ 125°C	Legacy chip			5
		V_ON/OFF < 0.15 V, V_IN = 16 V, –40°C ≤ T_J≤ 125°C	New chip		1.12	2.75
V_UVLO+	Rising bias supply UVLO	V_IN rising, –40°C ≤ T_J≤ 125°C	New chip		2.2	2.4	V
V_UVLO-	Falling bias supply UVLO	V_IN falling, –40°C ≤ T_J≤ 125°C		1.9			V
V_UVLO(HYST)	UVLO hysteresis	–40°C ≤ T_J≤ 125°C			0.130		V
I_O(SC)	Short output current	R_L = 0 Ω (steady state)	Legacy chip		150		mA
I_O(SC)	Short output current	R_L = 0 Ω (steady state)	New chip		150		mA
V_ON/OFF	ON/OFF input voltage	Low = Output OFF	Legacy chip		0.5		V
		Low = Output OFF	New chip		0.72
		Low = Output OFF, V_OUT + 1 ≤ V_IN ≤ 16 V, –40°C ≤ T_J≤ 125°C	Legacy chip			0.15
			New chip			0.15
		High = Output ON	Legacy chip		1.4
		High = Output ON	New chip		0.85
		High = Output ON, V_OUT + 1 ≤ V_IN ≤ 16 V, –40°C ≤ T_J≤ 125°C	Legacy chip	1.6
			New chip	1.6
I_ON/OFF	ON/OFF input current	V_ON/OFF = 0 V	Legacy chip		0.01		μA
		V_ON/OFF = 0 V	New chip		0.42
		V_ON/OFF = 0 V, V_OUT + 1 ≤ V_IN ≤ 16 V, –40°C ≤ T_J≤ 125°C	Legacy chip			–1
		V_ON/OFF = 0 V, V_OUT + 1 ≤ V_IN ≤ 16 V, –40°C ≤ T_J≤ 125°C	New chip			–0.9
		V_ON/OFF = 5 V	Legacy chip		5
		V_ON/OFF = 5 V	New chip		0.011
		V_ON/OFF = 5 V, V_OUT + 1 ≤ V_IN ≤ 16 V, –40°C ≤ T_J≤ 125°C	Legacy chip			15
		V_ON/OFF = 5 V, V_OUT + 1 ≤ V_IN ≤ 16 V, –40°C ≤ T_J≤ 125°C	New chip			2.20
I_O(PK)	Peak output current	V_OUT ≥ V_O(NOM) –5% (steady state)	Legacy chip		400		mA
I_O(PK)	Peak output current	V_OUT ≥ V_O(NOM) –5% (steady state)	New chip		350		mA
ΔV_O/ΔV_IN	Ripple rejection	f = 1 kHz, C_OUT = 10 μF	Legacy chip		63		dB
ΔV_O/ΔV_IN	Ripple rejection	f = 1 kHz, C_OUT = 10 μF	New chip		75		dB
V_n	Output noise voltage	Bandwidth = 300 Hz to 50 kHz, C_OUT= 2.2 μF, V_OUT = 3.3 V, I_LOAD = 150 mA	Legacy chip		160		μ_VRMS
V_n	Output noise voltage	Bandwidth = 300 Hz to 50 kHz, C_OUT= 2.2 μF, V_OUT = 3.3 V, I_LOAD = 150 mA	New chip		140		μ_VRMS
T_sd+	Thermal shutdown threshold	Shutdown, temperature increasing	New chip		170		°C
T_sd-	Thermal shutdown threshold	Reset, temperature decreasing	New chip		150		°C

(1) Dropout voltage (V_DO) is defined as the input-to-output differential at which the output voltage drops 100 mV below the value measured with a 1-V differential. V_DO is measured with V_IN = V_OUT(nom)– 100 mV for fixed output devices.