SNVS233C March 2003 – December 2015 LM8365
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DBV|5
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
Figure 20. LM8365 IC Nomenclature
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation, see the following:
LM8365EVM User's Guide, SNVU493
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.