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ZHCSFV4B December 2016 – June 2017 LM5166

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- MPDS117L

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

DRC|10
- QFND013N

訂購(gòu)信息

6 Specifications

6.1 Absolute Maximum Ratings

Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted).⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
VIN, EN to GND		–0.3	68	V
SW to GND		–0.7	V_VIN + 0.3	V
SW to GND	20-ns transient	–3		V
PGOOD, VOUT⁽³⁾ to GND		–0.3	16	V
HYS to GND		–0.3	7	V
ILIM, SS, RT, FB⁽⁴⁾ to GND		–0.3	3.6	V
Maximum junction temperature, T_J		–40	150	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

(3) Fixed output setting.

(4) Adjustable output setting.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted).⁽¹⁾

		MIN	MAX	UNIT
Input voltages	VIN	3	65	V
	EN	–0.3	65
	PGOOD	–0.3	12
	HYS	–0.3	5.5
Output current	I_OUT	0	500	mA
Temperature	Operating junction temperature	–40	150	°C

(1) Operating Ratings are conditions under which the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM5166	UNIT
		DRC (VSON)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	49.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	57.2	°C/W
R_θJB	Junction-to-board thermal resistance	26.6	°C/W
ψ_JT	Junction-to-top characterization parameter	0.8	°C/W
ψ_JB	Junction-to-board characterization parameter	23.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	4.8	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits are based on T_J = –40°C to +125°C. V_IN = 12 V (unless otherwise noted).⁽¹⁾⁽²⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
I_Q-SD	VIN DC supply current, shutdown	V_EN = 0 V, T_J = 25°C		4	6	µA
I_Q-SLEEP	VIN DC supply current, no load	V_FB = 1.5 V, T_J = 25°C		9.7	15	µA
I_{Q-SLEEP-VINMAX}	VIN DC supply current, no load	V_FB = 1.5 V, V_VIN = 65 V, T_J = 25°C		10	15	µA
I_Q-ACTIVE-PFM	VIN DC supply current, active	PFM mode, R_RT = 0 Ω, R_SS = 100 kΩ		205		µA
I_Q-ACTIVE-COT	VIN DC supply current, active	COT mode, R_RT = R_SS = 100 kΩ		320		µA
POWER SWITCHES
R_DSON1	High-side MOSFET R_DS(on)	I_SW = –100 mA		0.93		Ω
R_DSON2	Low-side MOSFET R_DS(on)	I_SW = 100 mA		0.48		Ω
CURRENT LIMITING
I_{HS_LIM1}	High-side peak current limit threshold	See Table 3	1125	1250	1375	mA
I_{HS_LIM2}			675	750	825
I_{HS_LIM3}			440	500	560
I_{LS_LIM1}	Low-side valley current limit threshold	See Table 3		415		mA
I_{LS_LIM2}	Low-side valley current limit threshold	See Table 3		315		mA
REGULATION COMPARATOR
V_VOUT5	VOUT 5-V DC setpoint	LM5166X	4.9	5.0	5.1	V
V_VOUT3.3	VOUT 3.3-V DC setpoint	LM5166Y	3.23	3.3	3.37	V
I_VOUT	VOUT pin input current	V_VOUT = 5 V, LM5166X		7		µA
I_VOUT	VOUT pin input current	V_VOUT = 3.3 V, LM5166Y		3.8		µA
V_FB1	Lower FB regulation threshold (PFM and COT)	Adjustable VOUT version	1.208	1.223	1.238	V
V_FB2	Upper FB regulation threshold (PFM)	Adjustable VOUT version	1.218	1.233	1.248	V
I_FB	FB pin input bias current	V_FB = 1 V			25	nA
FB_HYS-PFM	FB comparator PFM hysteresis	PFM mode		10		mV
FB_HYS-COT	FB comparator dropout hysteresis	COT mode		4		mV
FB_LINE-REG	FB threshold variation over line	V_VIN = 3 V to 65 V		0.005		%/V
VOUT_LINE-REG	VOUT threshold variation over line	LM5166X, V_VIN = 6 V to 65 V LM5166Y, V_VIN = 4.5 V to 65 V		0.005		%/V
POWER GOOD
UVT_RISING	PGOOD comparator	V_FB rising relative to V_FB1 threshold		94%
UVT_FALLING	PGOOD comparator	V_FB falling relative to V_FB1 threshold		87%
R_PGOOD	PGOOD on-resistance	V_FB = 1 V		80	200	Ω
V_INMIN-PGOOD	Minimum required VIN for valid PGOOD	V_VIN falling I_PGOOD = 0.1 mA, V_PGOOD < 0.5 V		1.2	1.65	V
I_PGOOD	PGOOD off-state leakage	V_FB = 1.2 V, V_PGOOD = 5.5 V		10	100	nA
ENABLE / UVLO
V_IN-ON	Turnon threshold	V_VIN rising	2.60	2.75	2.95	V
V_IN-OFF	Turnoff threshold	V_VIN falling	2.35	2.45	2.60	V
V_EN-ON	EN turnon threshold	V_EN rising	1.163	1.22	1.276	V
V_EN-OFF	EN turnoff threshold	V_EN falling	1.109	1.144	1.178	V
V_EN-HYS	EN hysteresis			76		mV
V_EN-SD	EN shutdown threshold	V_EN falling	0.3	0.6		V
R_HYS	HYS on-resistance	V_EN = 1 V		80	200	Ω
I_HYS	HYS off-state leakage	V_EN = 1.5 V, V_HYS = 5.5 V		10	100	nA
SOFT-START
I_SS	Soft-start charging current	V_SS = 1 V		10		µA
T_SS-INT	Soft-start rise time	SS floating		900		µs
THERMAL SHUTDOWN
T_J-SD	Thermal shutdown threshold			170		°C
T_J-SD-HYS	Thermal shutdown hysteresis			10		°C

6.6 Switching Characteristics

Over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TYP	UNIT
T_ON-MIN	Minimum on-time		180	ns
T_ON1	On-time	16 kΩ from RT to GND	280	ns
T_ON2	On-time	75 kΩ from RT to GND	1150	ns

(1) All hot and cold limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.

(2) The junction temperature (T_J in °C) is calculated from the ambient temperature (T_A in °C) and power dissipation (P_D in Watts) as follows: T_J = T_A + (P_D • θ_JA) where θ_JA (in °C/W) is the package thermal impedance provided in Thermal Information.

6.7 Typical Characteristics

Unless otherwise specified, V_IN = 12 V, V_OUT = 5 V. Please refer to Typical Applications for circuit designs.

See schematic,
Figure 52

L_F = 150 µH
C_OUT = 47 µF

F_SW(nom) = 100 kHz
R_RT = 309 kΩ

Figure 1. Converter Efficiency: 5 V, 500 mA, COT

See schematic,
Figure 70

L_F = 4.7 µH
C_OUT = 47 µF

F_SW(nom) = 600 kHz
R_RT = 0 Ω

Figure 3. Converter Efficiency: 3.3 V, 300 mA, PFM

Figure 5. Internal V_IN UVLO Voltage vs Temperature

Figure 7. V_IN Sleep and Shutdown Supply Current vs Temperature

R_RT = 100 kΩ

Figure 9. V_IN Active Mode Supply Current vs Temperature

V_VIN = 65 V

Figure 11. SW Pin Leakage Current vs Temperature

LM5166Y

Figure 13. VOUT Regulation Thresholds vs Temperature

Figure 15. PGOOD Thresholds vs Temperature

Figure 17. Soft-Start to Feedback Clamp Offset vs Temperature

Figure 19. High-Side MOSFET On-State Resistance vs Temperature

Figure 21. Low-Side MOSFET On-State Resistance vs Temperature

Figure 23. High-Side Peak Current Limit vs Temperature

Figure 25. Low-Side Valley Current Limit vs Temperature

Figure 27. Zero-Cross Current Threshold vs Temperature

Time Scale: 20 ms/Div
CH1: V_SW, 5 V/Div

CH2: V_OUT, 50 mV/Div
CH4: I_L, 200 mA/Div

Figure 29. No-Load Switching Waveforms, COT, Type 2

Time Scale: 2 ms/Div
CH1: V_IN, 2 V/Div

CH2: V_OUT, 1 V/Div
CH4: I_L, 200 mA/Div

Figure 31. Full-Load Start-Up, COT, Type 2

Time Scale: 20 ms/Div
CH1: V_SW, 5 V/Div

CH2: V_OUT, 50 mV/Div
CH4: I_L, 400 mA/Div

Figure 33. No-Load Switching Waveforms
PFM Mode, I_LIM = 750 mA

Time Scale: 2 ms/Div
CH1: V_IN, 2 V/Div

CH2: V_OUT, 1 V/Div
CH4: I_L, 400 mA/Div

Figure 35. Full-Load Start-Up, PFM, I_LIM = 750 mA

Time Scale: 50 ms/Div
CH1: V_SW, 5 V/Div

CH2: V_OUT, 50 mV/Div
CH4: I_L, 400 mA/Div

Figure 37. No-Load Switching Waveforms
PFM Mode, I_LIM = 1.25 A, Modulated

See schematic,
Figure 63

L_F = 47 µH
C_OUT = 47 µF

F_SW(nom) = 200 kHz
R_RT = 100 kΩ

Figure 2. Converter Efficiency: 3.3 V, 500 mA, COT

See schematic,
Figure 77

L_F = 22 µH
C_OUT = 200 µF

F_SW(nom) = 100 kHz
R_RT = 0 Ω

Figure 4. Converter Efficiency: 5 V, 500 mA, PFM

Figure 6. Enable Threshold Voltage vs Temperature

Figure 8. V_IN Sleep and Shutdown Supply Current vs Input Voltage

R_RT = 100 kΩ

Figure 10. V_IN Active Mode Supply Current vs Input Voltage

Figure 12. Feedback Comparator Threshold Voltage vs Temperature

LM5166X

Figure 14. VOUT Regulation Thresholds vs Temperature

Figure 16. Feedback Voltage vs Soft-Start Voltage

Figure 18. COT One-Shot Timer T_ON vs Input Voltage

Figure 20. High-Side MOSFET On-State Resistance vs Input Voltage

Figure 22. Low-Side MOSFET On-State Resistance vs Input Voltage

Figure 24. High-Side Peak Current Limit vs Input Voltage

Figure 26. Low-Side Valley Current Limit vs Input Voltage

Figure 28. PGOOD and HYS Pulldown R_DS(on) vs Temperature

Time Scale: 10 µs/Div
CH1: V_SW, 5 V/Div

CH2: V_OUT, 50 mV/Div
CH4: I_L, 200 mA/Div

Figure 30. Full Load Switching Waveforms, COT, Type 2

Time Scale: 100 µs/Div
CH1: V_SW, 4 V/Div

CH4: I_L, 200 mA/Div

Figure 32. Short Circuit, COT, Type 2

Time Scale: 10 µs/Div
CH1: V_SW, 5 V/Div

CH2: V_OUT, 100 mV/Div
CH4: I_L, 400 mA/Div

Figure 34. Full-Load Switching Waveforms
PFM Mode, I_LIM = 750 mA

Time Scale: 20 µs/Div
CH1: V_SW, 4 V/Div

CH4: I_L, 400 mA/Div

Figure 36. Short Circuit, PFM, I_LIM = 750 mA

Time Scale: 20 µs/Div
CH1: V_SW, 5 V/Div

CH2: V_OUT, 100 mV/Div
CH4: I_L, 400 mA/Div

Figure 38. Full-Load Switching Waveforms
PFM Mode, I_LIM = 1.25 A, Modulated