SNVS255B May 2004 – September 2016 LM5110
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Device Options
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Detailed Description
- 9 Applications and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)| MIN | MAX | UNIT | |
|---|---|---|---|
| VCC to VEE | −0.3 | 15 | V |
| VCC to IN_REF | −0.3 | 15 | V |
| IN to IN_REF, nSHDN to IN_REF | −0.3 | 15 | V |
| IN_REF to VEE | −0.3 | 5 | V |
| Maximum junction temperature, (TJ(max)) |
150 | °C | |
| Operating junction temperature | 125 | °C | |
| Storage temperature, (Tstg) | –55 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VCC to VEE | 3.5 | - | 14 | V | |
| VCC to IN_REF | 3.5 | - | 14 | V | |
| IN_REF to VEE | 0 | 4 | V | ||
| Junction Temperature | -40 | 126 | °C |
7.4 Thermal Information
| THERMAL METRIC(1) | LM5110 | UNIT | ||
|---|---|---|---|---|
| D (SOIC) | DPR (WSON) | |||
| 8 PINS | 10 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 114 | 40.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 56.6 | 40.4 | °C/W |
| RθJB | Junction-to-board thermal resistance | 55.2 | 17.3 | °C/W |
| ψJT | Junction-to-top characterization parameter | 10.3 | 0.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 54.6 | 17.5 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | - | 6.3 | °C/W |
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report.
7.5 Electrical Characteristics
TJ = −40°C to +125°C, VCC = 12V, VEE = IN_REF = 0V, nSHDN = VCC, No Load on OUT_A or OUT_B, unless otherwise specified.| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VCC Operating Range | VCC−IN_REF and VCC−VEE | 3.5 | 14 | V | ||
| VCCR | VCC Under Voltage Lockout (rising) | VCC−IN_REF | 2.3 | 2.9 | 3.5 | V |
| VCCH | VCC Under Voltage Lockout Hysteresis | 230 | mV | |||
| ICC | VCC Supply Current (ICC) | IN_A = IN_B = 0 V (5110-1) | 1 | 2 | mA | |
| IN_A = IN_B = VCC (5110-2) | 1 | 2 | ||||
| IN_A = VCC, IN_B = 0 V (5110-3) | 1 | 2 | ||||
| ICCSD | VCC Shutdown Current (ICC) | nSHDN = 0 V | 18 | 25 | µA | |
| CONTROL INPUTS | ||||||
| VIH | Logic High | 2.2 | V | |||
| VIL | Logic Low | 0.8 | V | |||
| HYS | Input Hysteresis | 400 | mV | |||
| IIL | Input Current Low | IN_A=IN_B=VCC (5110-1-2-3) | −1 | 0.1 | 1 | µA |
| IIH | Input Current High | IN_A=IN_B=VCC (5110-1) | 10 | 18 | 25 | |
| IN_A=IN_B=VCC (5110-2) | −1 | 0.1 | 1 | |||
| IN_A=VCC (5110-3) | –1 | 0.1 | 1 | |||
| IN_B=VCC (5110-3) | 10 | 18 | 25 | |||
| SHUTDOWN INPUT | ||||||
| ISD | Pullup Current | nSHDN = 0 V | −18 | −25 | µA | |
| VSDR | Shutdown Threshold | nSHDN rising | 0.8 | 1.5 | 2.2 | V |
| VSDH | Shutdown Hysteresis | 165 | mV | |||
| OUTPUT DRIVERS | ||||||
| ROH | Output Resistance High | IOUT = −10 mA (1) | 30 | 50 | Ω | |
| ROL | Output Resistance Low | IOUT = + 10 mA (1) | 1.4 | 2.5 | Ω | |
| ISource | Peak Source Current | OUTA/OUTB = VCC/2, 200 ns Pulsed Current |
3 | A | ||
| ISink | Peak Sink Current | OUTA/OUTB = VCC/2, 200 ns Pulsed Current |
5 | A | ||
| LATCHUP PROTECTION | ||||||
| AEC - Q100, Method 004 | TJ = 150°C | 500 | mA | |||
(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices.
7.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| td1 | Propagation Delay Time Low to High, IN rising (IN to OUT) | CLOAD = 2 nF, see Figure 2 | 25 | 40 | ns | |
| td2 | Propagation Delay Time High to Low, IN falling (IN to OUT) | CLOAD = 2 nF, see Figure 2 | 25 | 40 | ns | |
| tr | Rise Time | CLOAD = 2 nF, see Figure 2 | 14 | 25 | ns | |
| tf | Fall Time | CLOAD = 2 nF, see Figure 2 | 12 | 25 | ns | |
(a)
Figure 1. Inverting
(b)
Figure 2. Noninverting
7.7 Typical Characteristics
