SNVS333F November 2004 – September 2016 LM5107
PRODUCTION DATA.
1 Features
- Drives Both a High Side and Low Side N-Channel MOSFET
- High Peak Output Current (1.4-A Sink / 1.3-A Source)
- Independent TTL Compatible Inputs
- Integrated Bootstrap Diode
- Bootstrap Supply Voltage to 118 V DC
- Fast Propagation Times (27-ns Typical)
- Drives 1000 pF Load With 15-ns Rise and Fall Times
- Excellent Propagation Delay Matching (2-ns Typical)
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Pin Compatible With ISL6700
- Packages:
- SOIC
- WSON (4 mm x 4 mm)
2 Applications
- Current Fed Push-Pull Converters
- Half and Full Bridge Power Converters
- Solid State Motor Drives
- Two Switch Forward Power Converters
3 Description
The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100-V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| LM5107 | SOIC (8) | 4.90 mm × 3.91 mm |
| WSON (8) | 4.00 mm × 4.00 mm |
- For all available packages, see the orderable addendum at the end of the datasheet.
Simplified Block Diagram
4 Revision History
Changes from E Revision (March 2016) to F Revision
- Changed Thermal Information tableGo
- Added Overview and Device Functional Modes in Detailed Description sectionGo
- Deleted HS Transient Voltages Below Ground from Application Information sectionGo
- Added Typical Application section. Go
- Added Power Supply Recommendations section. Go
- Added Receiving Notification of Documentation Updates sectionGo
Changes from D Revision (March 2013) to E Revision
- Added Device Information table, ESD Ratings, Pin Configuration and Functions section, Detailed Description section, Application and Implementation section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section.Go
Changes from C Revision (March 2013) to D Revision
- Changed layout of National Semiconductor Data Sheet to TI formatGo