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ZHCSES8 March 2016 LM5022-Q1

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DGS|10
- MPDS035C

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

zhcses8_oa

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
VIN to GND		–0.3	65	V
VCC to GND		–0.3	16	V
RT/SYNC to GND		–0.3	5.5	V
OUT to GND		–1.5V for < 100 ns
All other pins to GND		–0.3	7	V
Power dissipation		Internally limited
Junction temperature⁽³⁾			150	°C
Soldering information	Vapor phase (60 sec.)		215	°C
Soldering information	Infrared (15 sec.)		220	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

(3) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

6.2 ESD Ratings: LM5022-Q1

			VALUE	UNIT
V_(ESD)	Human body model (HBM), per AEC Q100-002⁽¹⁾		±2000	V
V_(ESD)	Charged device model (CDM), per AEC Q100-011⁽²⁾		±750	V

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. This is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process

(2) Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Supply voltage	6	60	V
External voltage at V_CC	7.5	14	V
Junction temperature	–40	125	°C

(1) Operating Ratings are conditions under the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM5022-Q1	UNIT
		DGS (VSSOP)
		10 PINS
R_θJA	Junction-to-ambient thermal resistance	161.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	56	°C/W
R_θJB	Junction-to-board thermal resistance	81.3	°C/W
ψ_JT	Junction-to-top characterization parameter	5.7	°C/W
ψ_JB	Junction-to-board characterization parameter	80	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Typical limits apply for T_J = 25°C and are provided for reference purposes only; minimum and maximum limits apply over the junction temperature (T_J) range of –40°C to +125°C. V_IN = 24 V and R_T = 27.4 kΩ, unless otherwise indicated.⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SYSTEM PARAMETERS
V_FB	FB Pin Voltage		1.225	1.250	1.275	V
START-UP REGULATOR
VCC⁽²⁾	VCC Regulation	10 V ≤ V_IN ≤ 60 V, I_CC = 1 mA	6.6	7	7.4	V
VCC⁽²⁾	VCC Regulation	6 V ≤ V_IN < 10 V, VCC Pin Open Circuit	5			V
I_CC	Supply Current	OUT Pin Capacitance = 0 VCC = 10 V		3.5	4	mA
I_CC-LIM	VCC Current Limit	VCC = 0 V, (⁽³⁾, ⁽²⁾)	15	35		mA
V_IN - VCC	Dropout Voltage Across Bypass Switch	I_CC = 0 mA, ƒ_SW < 200 kHz 6 V ≤ V_IN ≤ 8.5 V		200		mV
V_BYP-HI	Bypass Switch Turn-off Threshold	V_IN increasing		8.7		V
V_BYP-HYS	Bypass Switch Threshold Hysteresis	V_IN Decreasing		260		mV
Z_VCC	VCC Pin Output Impedance 0 mA ≤ ICC ≤ 5 mA	V_IN = 6 V		58		Ω
		V_IN = 8 V		53
		V_IN = 24 V		1.6
VCC_-HI	VCC Pin UVLO Rising Threshold			5		V
VCC_-HYS	VCC Pin UVLO Falling Hysteresis			300		mV
I_VIN	Start-up Regulator Leakage	V_IN = 60 V		150	500	µA
I_IN-SD	Shutdown Current	V_UVLO = 0 V, VCC = Open Circuit		350	450	µA
ERROR AMPLIFIER
GBW	Gain Bandwidth			4		MHz
A_DC	DC Gain			75		dB
I_COMP	COMP Pin Current Sink Capability	V_FB = 1.5 V V_COMP = 1 V	5	17		mA
UVLO
V_SD	Shutdown Threshold		1.22	1.25	1.28	V
I_SD-HYS	Shutdown Hysteresis Current Source		16	20	24	µA
CURRENT LIMIT
t_LIM-DLY	Delay from ILIM to Output	CS steps from 0 V to 0.6 V OUT transitions to 90% of VCC		30		ns
V_CS	Current Limit Threshold Voltage		0.434	0.5	0.55	V
t_BLK	Leading Edge Blanking Time			65		ns
R_CS	CS Pin Sink Impedance	Blanking active		40	75	Ω
SOFT-START
I_SS	Soft-start Current Source		7	10	13	µA
V_SS-OFF	Soft-start to COMP Offset		0.344	0.55	0.75	V
OSCILLATOR
f_SW	RT to GND = 84.5 kΩ	See⁽⁴⁾	170	200	230	kHz
	RT to GND = 27.4 kΩ	See⁽⁴⁾	525	600	675	kHz
	RT to GND = 16.2 kΩ	See⁽⁴⁾	865	990	1115	kHz
	RT to GND = 6.65 kΩ	See⁽⁴⁾	1910	2240	2570	kHz
V_SYNC-HI	Synchronization Rising Threshold				3.8	V
PWM COMPARATOR
t_COMP-DLY	Delay from COMP to OUT Transition	V_COMP = 2 V CS stepped from 0 V to 0.4 V		25		ns
D_MIN	Minimum Duty Cycle	V_COMP = 0 V			0%
D_MAX	Maximum Duty Cycle		90%	95%
A_PWM	COMP to PWM Comparator Gain			0.33		V/V
V_COMP-OC	COMP Pin Open Circuit Voltage	V_FB = 0 V	4.3	5.2	6.1	V
I_COMP-SC	COMP Pin Short Circuit Current	V_COMP = 0 V, V_FB = 0V	0.6	1.1	1.5	mA
SLOPE COMPENSATION
V_SLOPE	Slope Compensation Amplitude		83	110	137	mV
MOSFET DRIVER
V_SAT-HI	Output High Saturation Voltage (VCC – VOUT)	I_OUT = 50 mA		0.25	0.75	V
V_SAT-LO	Output Low Saturation Voltage (VOUT)	I_OUT = 100 mA		0.25	0.75	V
t_RISE	OUT Pin Rise Time	OUT Pin load = 1 nF		18		ns
t_FALL	OUT Pin Fall Time	OUT Pin load = 1 nF		15		ns
THERMAL CHARACTERISTICS
T_SD	Thermal Shutdown Threshold			165		°C
T_SD-HYS	Thermal Shutdown Hysteresis			25		°C

(1) All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control. The junction temperature (T_J in °C) is calculated from the ambient temperature (T_A in °C) and power dissipation (P_D in Watts) as follows: T_J = T_A + (P_D • R_θJA) where R_θJA (in °C/W) is the package thermal impedance provided in the Thermal Information section.

(2) VCC provides bias for the internal gate drive and control circuits.

(3) Device thermal limitations may limit usable range.

(4) Specification applies to the oscillator frequency.