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SNVS484H January 2007 – July 2015 LM5001 , LM5001-Q1

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

D|8
- MSOI002K

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
VIN to GND		76	V
SW to GND (Steady State)	–0.3	76	V
VCC, EN to GND		14	V
COMP, FB, RT to GND	–0.3	7	V
Maximum Junction Temperature		150	°C
Storage Temperature Range, T_stg	-65	150	°C

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±750	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

	MIN	NOM	MAX	UNIT
VIN	3.1		75	V
Operating Junction Temperature	−40		125	°C

6.4 Thermal Information

THERMAL METRIC		LM5001-Q1	LM5001		UNIT
		SOIC	SOIC	WSON
		(8 PINS)
R_θJA	Junction-to-ambient thermal resistance	140	140	40	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	32	32	4.5	°C/W

6.5 Electrical Characteristics

Minimum and Maximum limits are ensured through test, design, or statistical correlation, over the junction temperature (T_J) range of –40°C to +125°C. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only. V_VIN = 10 V, R_RT = 48.7 kΩ unless otherwise stated⁽¹⁾.

SYMBOL	PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
Startup Regulator
V_VCC-REG	VCC Regulator Output			6.55	6.85	7.15	V
	VCC Current Limit		V_VCC = 6 V	15	20		mA
	VCC UVLO Threshold		V_VCC increasing	2.6	2.8	3	V
	VCC Undervoltage Hysteresis				0.1		V
	Bias Current (I_IN)		V_FB = 1.5 V		3.1	4.5	mA
I_Q	Shutdown Current (I_IN)		V_EN = 0V		95	130	µA
EN Thresholds
	EN Shutdown Threshold		V_EN increasing	0.25	0.45	0.65	V
	EN Shutdown Hysteresis				0.1
	EN Standby Threshold		V_EN increasing	1.2	1.26	1.32
	EN Standby Hysteresis				0.1
	EN Current Source				6		µA
MOSFET Characteristics
	MOSFET R_DS(ON) plus Current Sense Resistance	LM5001	I_D = 0.5 A		490	800	mΩ
	MOSFET R_DS(ON) plus Current Sense Resistance	LM5001-Q1	I_D = 0.5 A		490	880	mΩ
	MOSFET Leakage Current		V_SW = 75 V		0.05	5	µA
	MOSFET Gate Charge		V_VCC = 6.9 V		4.5		nC
Current Limit
I_LIM	Cycle by Cycle Current Limit			0.8	1.0	1.2	A
	Cycle by Cycle Current Limit Delay				100	200	ns
Oscillator
F_SW1	Frequency1		R_RT = 48.7 kΩ	225	260	295	KHz
F_SW2	Frequency2		R_RT = 15.8 kΩ	660	780	900	KHz
V_RT-SYNC	SYNC Threshold			2.2	2.6	3.2	V
	SYNC Pulse Width Minimum		V_RT > V_RT-SYNC + 0.5 V		15		ns
PWM Comparator
	Maximum Duty Cycle			80%	85%	90%
	Min On-time		V_COMP > V_COMP-OS		35		ns
	Min On-time		V_COMP < V_COMP-OS		0		ns
V_COMP-OS	COMP to PWM Comparator Offset			0.9	1.30	1.55	V
Error Amplifier
V_FB-REF	Feedback Reference Voltage		Internal reference V_FB = V_COMP	1.241	1.260	1.279	V
	FB Bias Current				10		nA
	DC Gain				72		dB
	COMP Sink Current		V_COMP = 250 mV	2.5			mA
	COMP Short Circuit Current		V_FB = 0, V_COMP = 0	0.9	1.2	1.5	mA
	COMP Open Circuit Voltage		V_FB = 0	4.8	5.5	6.2	V
	COMP to SW Delay				50		ns
	Unity Gain Bandwidth				3		MHz
Thermal Shutdown
T_SD	Thermal Shutdown Threshold				165		°C
	Thermal Shutdown Hysteresis				20		°C

(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate TI’s Average Outgoing Quality Level (AOQL).