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SNVS446D June 2006 – January 2016 LM1771

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

NGG|6
- MPDS395
DGK|8
- MPDS028E

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

See ⁽¹⁾ ⁽²⁾

		MIN	MAX	UNIT
V_IN		–0.3	6	V
EN, FB, HG, LG		–0.3	V_IN	V
Junction temperature			150	°C
Lead temperature	Soldering, 10 sec		260	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

	MIN	MAX	UNIT
V_IN to GND	2.8	5.5	V
Junction temperature, T_J	−40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM1771		UNIT
		NGG (WSON)	DGK (VSSOP)
		6 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	52.8	169.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	51.4	59.7	°C/W
R_θJB	Junction-to-board thermal resistance	27.2	89.3	°C/W
ψ_JT	Junction-to-top characterization parameter	0.7	7.0	°C/W
ψ_JB	Junction-to-board characterization parameter	27.3	87.9	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.4	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Specifications are for T_J = 25°C. All maximum and minimum limits apply over the full junction temperature range (−40°C to +125°C), unless otherwise specified. Minimum and maximum limits are ensured through test, design or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25°C and are provided for reference purposes only. Unless otherwise specified, V_IN = 3.3 V.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_FB	Feedback pin voltage		0.782	0.8	0.818	V
I_Q	Quiescent current	V_FB = 0.9 V		400	700	µA
T_ON	Switch ON-time	LM1771S - (500 ns)	0.4	0.5	0.6	µs
		LM1771T - (1000 ns)	0.8	1	1.2
		LM1771U - (2000 ns)	1.6	2	2.4
T_{OFF_MIN}	Minimum OFF-time	LM1771S - (500 ns)		150	250	ns
		LM1771T - (1000 ns)		135	225
		LM1771U - (2000 ns)		120	220
T_D	Gate drive dead-time			70		ns
V_{IH_EN}	EN pin rising threshold		1.15	1.2	1.25	V
V_{EN_HYS}	EN pin hysteresis			50	200	mV
I_FB	Feedback pin bias current	V_FB = 0.9 V		50		nA
V_UVLO	Undervoltage lockout	V_IN Rising Edge		2.65	2.8	V
V_{UVLO_HYS}	Undervoltage lockout hysteresis			50		mV
V_{SC_TH}	Feedback pin short circuit latch threshold		0.42	0.55	0.65	V
R_{DS(ON) 1}	HG FET driver pullup ON-resistance	I_HG = 20 mA		4		Ω
R_{DS(ON) 2}	HG FET driver pulldown ON-resistance	I_HG = 20 mA		6		Ω
R_{DS(ON) 3}	LG FET driver pullup ON-resistance	I_LG = 20 mA		4		Ω
R_{DS(ON) 4}	LG FET driver pulldown ON-resistance	I_LG = 20 mA		6		Ω

6.6 Typical Characteristics

All curves taken at VIN = 3.3 V with configuration in typical application circuit shown in Typical Applications. T_J = 25°C, unless otherwise specified.