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SBOS401C July 2007 – April 2016 INA270A-Q1 , INA271A-Q1

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

D|8
- MSOI002K

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

sbos401c_oa

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_S	Supply voltage		18	V
V_SENSE	Differential analog input voltage range (V_IN+ – V_IN–)	–18	18	V
V_CM	Common-mode analog input voltage range (V_IN+ + V_IN–)/2	–16	80	V
V_O	Analog output voltage range (OUT and PRE OUT)	(GND – 0.3)	(V_S) + 0.3	V
I_I	Input current (any pin)		5	mA
T_J	Maximum junction temperature		150	°C
T_A	Operating free-air temperature	–40	125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	2000	V
		Machine Model (MM)	100
		Charged-device model (CDM), per AEC Q100-011	1000

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

		MIN	NOM	MAX	UNIT
V_S	Supply voltage	2.7	5	18	V
V_CM	Common mode input	–16	12	80	V
T_A	Operating free-air temperature	–40	25	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		INA27xA-Q1	UNIT
		D (SOIC)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	78.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	71.6	°C/W
R_θJB	Junction-to-board thermal resistance	68.2	°C/W
ψ_JT	Junction-to-top characterization parameter	22	°C/W
ψ_JB	Junction-to-board characterization parameter	67.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

T_A = 25°C, V_S = 5 V, V_CM = 12 V, V_SENSE = 100 mV, PRE OUT connected to BUF IN (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
Input
V_SENSE	Full-scale input voltage	V_SENSE = V_IN+ - V_IN–			0.15	(V_S – 0.2)/ Gain	V
V_CM	Common-mode input voltage	T_A = –40°C to +125°C		–16		80	V
CMRR	Common-mode rejection	V_IN+ = –16 V to +80 V		80	120		dB
CMRR	Common-mode rejection	V_IN+ = 12 V to 80 V, T_A = –40°C to +125°C		100	120		dB
V_OS	Offset voltage, RTI⁽¹⁾				±0.5	2.5	mV
V_OS	Offset voltage, RTI⁽¹⁾	T_A = –40°C to +125°C				±3	mV
dV_OS/dT	Input offset voltage temperature coefficient	T_A = –40°C to +125°C			2.5	20	μV/°C
PSR	Offset voltage power-supply rejection	V_S = 2.7 V to 18 V, V_CM = 18 V, T_A = –40°C to +125°C			5	100	μV/V
I_IB	Input bias current	IN– pin, T_A = –40°C to +125°C full range			±8	±16	μA
Z_O	Output impedance⁽²⁾	PRE OUT pin			96		kΩ
	Buffer input bias current				–50		nA
	Buffer input bias current temperature coefficient				±0.3		nA/°C
Output (V_SENSE ≥ 20 mV)⁽³⁾
G	Gain	INA270A-Q1			14		V/V
G	Gain	INA271A-Q1			20		V/V
G_BUF	Output buffer gain				2		V/V
	Total gain error	V_SENSE = 20 mV to 100 mV			±0.2%	±1%
	Total gain error	V_SENSE = 20 mV to 100 mV	T_A = –40°C to +125°C			±2%
	Total gain error temperature coefficient	T_A = –40°C to +125°C				50	ppm/°C
	Total output error⁽⁴⁾				±0.75%	±2.2%
	Total output error⁽⁴⁾	T_A = –40°C to +125°C			±1%	±3%
	Nonlinearity error	V_SENSE = 20 mV to 100 mV			±0.002%
Z_O	Output impedance	OUT pin			1.5		Ω
	Maximum capacitive load	No sustained oscillation			10		nF
Voltage Output⁽⁵⁾
	Swing to V_S power-supply rail	R_L = 10 kΩ to GND, T_A = –40°C to +125°C			V_S – 0.05	V_S – 0.2	V
	Swing to GND	R_L = 10 kΩ to GND, T_A = –40°C to +125°C			V_GND + 0.003	V_GND + 0.05	V
Frequency Response
BW	Bandwidth	C_L = 5 pF			130		kHz
φ_m	Phase margin	C_L < 10 nF			40		degrees
SR	Slew rate				1		V/μs
t_s	Settling time (1%)	V_SENSE = 10 mV to 100 mV, C_L = 5 pF			2		μs
Noise, RTI⁽¹⁾
V_n	Voltage noise density				40		nV/√Hz
Power Supply
I_Q	Quiescent current	V_OUT = 2 V			700	900	μA
I_Q	Quiescent current	V_SENSE = 0 V, T_A = –40°C to +125°C			350	950	μA

(1) RTI = referred to input

(2) Initial resistor variation is ±30% with an additional –2200-ppm/°C temperature coefficient.

(3) For output behavior when V_SENSE < 20 mV, see Application Information

(4) Total output error includes effects of gain error and V_OS.

(5) See Typical Characteristics curve Output Swing vs Output Current and Accuracy Variations as a Result of VSENSE and Common-Mode Voltage in the Application Information section.