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ZHCSDI9D January 2015 – January 2017 HD3SS460

PRODUCTION DATA.

封裝選項

請參考 PDF 數據表獲取器件具體的封裝圖。

機械數據 (封裝 | 引腳)

RNH|30
RHR|28

散熱焊盤機械數據 (封裝 | 引腳)

RHR|28
- QFND246D

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

	MIN	MAX	UNIT
Supply Voltage, VCC	–0.5	4	V
Differential High Speed I/O Voltages, C[R/T]X[1/2][p/n], Ln[A-D][p/n], SS[R/T]X[p/n]	–0.5	2.5	V
Low Speed I/O Voltages, CSBU[1/2], SBU[1/2]	–0.5	4	V
Control signal voltages, POL, AMSEL, EN	–0.5	4	V
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	NOM	MAX	UNIT
V_CC	Supply voltage		2.7	3.3	3.6	V
T_A	Operating free air temperature	HD3SS460	0	25	70	°C
T_A	Operating free air temperature	HD3SS460I	–40	25	85	°C
V_CM	High speed port common mode voltage		0		2	V
V_IN	Low Speed signal voltage		0		VCC	V
Vdiff	High speed port differential voltage		0		1.8	Vpp

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		HD3SS460		UNIT
		QFN (RNH)	QFN (RHR)
		30 PINS	28 PINS
R_θJA	Junction-to-ambient thermal resistance	51.6	44.0	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	37.5	34.8	°C/W
R_θJB	Junction-to-board thermal resistance	17.5	14.7	°C/W
ψ_JT	Junction-to-top characterization parameter	0.7	0.7	°C/W
ψ_JB	Junction-to-board characterization parameter	17.3	24.5	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	6.8	6.9	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

typical values for all parameters are at V_DD = 3.3 V and T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_IL	Input low voltage, control pins POL, AMSEL, EN		–0.1		0.4	V
V_IH	Input high voltage, control pins AMSEL, EN		V_CC –0.4		V_CC+0.1
V_IH	Input high voltage, control pins POL		1.7		V_CC+0.1
V_IM	Input mid-level voltage, control pins AMSEL, EN		V_CC/2 –0.3	V_CC/2	V_CC/2 +0.3
I_{LK-DIFF-ACTIVE}	Leakage current on active differential IO pins, VCC = 3.6 V, pin at 0 or 2.4 V.				1	µA
I_{LK-DIFF-INACTIVE}	Leakage current on inactive differential IO pins, VCC = 3.6V, pin at 2.4 V.				150
I_IH	Input high current, control pins POL, AMSEL, EN and signal pins CSBU1/2, SBU1/2				1
I_IL	Input low current, control pins POL, AMSEL, EN and signal pins CSBU1/2, SBU1/2				1
I_IM	Input mid-level current, control pins AMSEL, EN				1
I_OFF	Device shutdown current			1	5
I_DD	Device active current, EN=H or M			0.6	0.9	mA
R_ON(HS)	Switch ON resistance for high speed differential signals	V_CC = 3.3 V, V_CM = 0-2 V, I_O = - 8 mA		8	14	Ω
R_ON(LS)	Switch ON resistance for low speed signals	V_CC = 3.3 V, V_CM = 0-2 V, I_O = - 8 mA		12
R_FLAT(ON,HS)	High speed differential signals’ ON resistance flatness for a channel	(R_ON(MAX) – R_ON(MIN)) over V_CM range V_CC = 3.3 V, V_CM = 0-2 V, I_O = - 8 mA			1.5
C_ON(HS)	High speed differential signals’ input capacitance				1	pF

7.6 High Speed Port Performance Parameters

under recommended operating conditions; R_LOAD, R_SC = 50 Ω (unless otherwise noted)

PARAMETER			TYP	UNIT
RL	Differential return loss	100 Mhz SS Paths	–23	dB
		2.5 Ghz SS Paths	–9
		100 MHz AM Paths	–23
		2. 7GHz AM Paths	–13
IL	Differential insertion loss	100 Mhz SS Paths	–0.7
		2.5 Ghz SS Paths	–1.6
		100 MHz AM Paths	–0.7
		2.7 GHz AM Paths	–1.4
OI	Differential off isolation	100 Mhz	–50
		2.5 Ghz	–26
		2.7 GHz	–25
Xtalk	Differential cross talk, Between CRX1/2 and CTX1/2	100 Mhz	–80
		2.5 Ghz	–30
		2.7 Ghz	–28
	Differential cross talk, Between CRX1 and CRX2 or CTX1 and CTX2	100 Mhz	–50
		2.5 Ghz	–26
		2.7 Ghz	–25
BW_SS	Differential –3 dB BW SS Paths		4.2	GHz
BW_AM	Differential –3 dB BW AM Paths		5.4	GHz
BW_SBU	Low-speed switch –3 dB BW		500	MHz

7.7 High Speed Signal Path Switching Characteristics

PARAMETER		TEST CONDITION	MAX	UNIT
t_PD	Switch propagation delay	R_SCand R_LOAD = 50 Ω, Figure 2	100	ps
t_SK(O)	Inter-Pair output skew (CH-CH)		50
t_SK(b-b)	Intra-Pair output skew (bit-bit)		5
t_ON	Control signals POL, AMSEL and EN (H/M toggle) to switch ON time	R_SC and R_LOAD = 50 Ω, Figure 1	3	µs
t_OFF	Control signals POL, AMSEL and EN (H/M toggle) to switch OFF time	R_SC and R_LOAD = 50 Ω, Figure 1	1	µs

7.8 Timing Diagrams

Figure 1. Switch ON/OFF Time

Figure 2. Propagation Delay and Skew