ZHCSHP1A February 2018 – April 2018 ESD204
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 10 nA, across operating temperature range | -3.6 | 3.6 | V | |
| VBRF | Positive Breakdown Voltage, Each IO Pin to GND (1) | IIO = 1 mA | 5 | 7.9 | V | |
| VBRR | Negative Breakdown Voltage, Each IO Pin to GND (1) | IIO = -1 mA, | -7.9 | -5 | V | |
| VHOLD | Positive Holding Voltage, Each IO pin to GND (2) | IIO = 1 mA | 6.2 | V | ||
| VHOLD-NEG | Negative Holding Voltage, Each IO pin to GND (2) | IIO = -1 mA | -6.2 | V | ||
| VCLAMP | Clamping voltage | Surge IPP = 5.5 A, Each IO pin to GND, GND to Each IO pin, tp=8/20 μs | 8.5 | V | ||
| TLP IPP = 5 A, Each IO pin to GND, GND to Each IO pin, tp=10/100 ns | 8.2 | V | ||||
| TLP IPP = 16 A, Each IO pin to GND, GND to Each IO pin, tp=10/100 ns | 11.5 | V | ||||
| RDYN | Dynamic resistance | Each IO Pin to GND, TLP tp=10/100 ns | 0.3 | Ω | ||
| GND to Each IO Pin, TLP tp=10/100 ns | 0.3 | |||||
| CLINE | Line capacitance, any IO to GND | VIO = 0 V, Vp-p = 30 mV, f = 1 MHz | 0.55 | 0.65 | pF | |
| ΔCLINE | Variation of line capacitance | CLINE1 - CLINE2, VIO = 0 V, Vp-p = 30 mV, f = 1 MHz | 0.02 | 0.07 | pF | |
| CCROSS | Line-to-line capacitance | VIO = 0 V, Vrms = 30 mV, f = 1 MHz | 0.25 | 0.35 | pF | |