ZHCSNT9K July 2008 – March 2021 DRV8800 , DRV8801
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
9.2.2.3.1 Junction-to-Ambiant Thermal Impedance (?JA)
At any given time during the steady state portion of the cycle, two FETs are enabled: A high side sourcing FET and a low side sinking FET. The increase in die temperature above ambient can be estimated by Equation 5
Equation 5. 