ZHCSIN3A August 2018 – June 2019 DRV8350 , DRV8350R , DRV8353 , DRV8353R
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Three Phase Smart Gate Drivers
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current-Shunt Amplifiers (DRV8353 and DRV8353R Only)
- 8.3.5 Step-Down Buck Regulator
- 8.3.6
Gate Driver Protective Circuits
- 8.3.6.1 VM Supply and VDRAIN Undervoltage Lockout (UVLO)
- 8.3.6.2 VCP Charge-Pump and VGLS Regulator Undervoltage Lockout (GDUV)
- 8.3.6.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
- 8.3.6.4 VSENSE Overcurrent Protection (SEN_OCP)
- 8.3.6.5 Gate Driver Fault (GDF)
- 8.3.6.6 Overcurrent Soft Shutdown (OCP Soft)
- 8.3.6.7 Thermal Warning (OTW)
- 8.3.6.8 Thermal Shutdown (OTSD)
- 8.3.6.9 Fault Response Table
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- 8.6.1 Status Registers
- 8.6.2
Control Registers
- 8.6.2.1 Driver Control Register (address = 0x02h)
- 8.6.2.2 Gate Drive HS Register (address = 0x03h)
- 8.6.2.3 Gate Drive LS Register (address = 0x04h)
- 8.6.2.4 OCP Control Register (address = 0x05h)
- 8.6.2.5 CSA Control Register (DRV8353 and DRV8353R Only) (address = 0x06h)
- 8.6.2.6 Driver Configuration Register (DRV8353 and DRV8353R Only) (address = 0x07h)
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1
Primary Application
- 9.2.1.1 Design Requirements
- 9.2.1.2
Detailed Design Procedure
- 9.2.1.2.1 External MOSFET Support
- 9.2.1.2.2 IDRIVE Configuration
- 9.2.1.2.3 VDS Overcurrent Monitor Configuration
- 9.2.1.2.4 Sense-Amplifier Bidirectional Configuration (DRV8353 and DRV8353R)
- 9.2.1.2.5 Single Supply Power Dissipation
- 9.2.1.2.6 Single Supply Power Dissipation Example
- 9.2.1.2.7 Buck Regulator Configuration (DRV8350R and DRV8353R)
- 9.2.1.3 Application Curves
- 9.2.2 Alternative Application
- 9.2.1
Primary Application
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGZ|48
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGZ|48
訂購(gòu)信息
8.3.1.4 Smart Gate Drive Architecture
The DRV835x gate drivers use an adjustable, complimentary, push-pull topology for both the high-side and low-side drivers. This topology allows for both a strong pullup and pulldown of the external MOSFET gates.
Additionally, the gate drivers use a smart gate-drive architecture to provide additional control of the external power MOSFETs, take additional steps to protect the MOSFETs, and allow for optimal tradeoffs between efficiency and robustness. This architecture is implemented through two components called IDRIVE and TDRIVE which are detailed in the IDRIVE: MOSFET Slew-Rate Control section and TDRIVE: MOSFET Gate Drive Control section. Figure 32 shows the high-level functional block diagram of the gate driver.
The IDRIVE gate-drive current and TDRIVE gate-drive time should be initially selected based on the parameters of the external power MOSFET used in the system and the desired rise and fall times (see the Application and Implementation section).
The high-side gate driver also implements a Zener clamp diode to help protect the external MOSFET gate from overvoltage conditions in the case of external short-circuit events on the MOSFET.
Figure 32. Gate Driver Block Diagram