ZHCSMP1 December 2021 DRV8251
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLY (VM) | ||||||
| IVMQ | VM sleep mode current | VVM = 24 V, IN1 = IN2 = 0, TJ = 25°C | 1 | μA | ||
| IVM | VM active mode current | VVM = 24 V, IN1 = IN2 = 1 | 3 | 4 | mA | |
| tWAKE | Turnon time | Control signal to active mode | 250 | μs | ||
| tSLEEP | Turnoff time | Control signal to sleep mode | 0.8 | 1.5 | ms | |
| LOGIC-LEVEL INPUTS (INx) | ||||||
| VIL | Input logic low voltage | 0.5 | V | |||
| VIH | Input logic high voltage | 1.5 | V | |||
| VHYS | Input hysteresis | 200 | mV | |||
| IIL | Input logic low current | VIN = 0 V | -1 | 1 | μA | |
| IIH | Input logic high current | VIN = 3.3 V | 33 | 100 | μA | |
| RPD | Input pulldown resistance | To GND | 100 | kΩ | ||
| DRIVER OUTPUTS (OUTx) | ||||||
| RDS(on)_HS | High-side MOSFET on resistance | VVM = 24 V, I = 1 A, fPWM = 25 kHz | 225 | mΩ | ||
| RDS(on)_LS | Low-side MOSFET on resistance | VVM = 24 V, I = 1 A, fPWM = 25 kHz | 225 | mΩ | ||
| VSD | Body diode forward voltage | IOUT = 1 A | 0.8 | V | ||
| tRISE | Output rise time | VVM = 24 V, OUTx rising from 10% to 90% | 220 | ns | ||
| tFALL | Output fall time | VVM = 24 V, OUTx falling from 90% to 10% | 220 | ns | ||
| tPD | Input to output propagation delay | INx to OUTx | 0.7 | 1 | μs | |
| tDEAD | Output dead time | 200 | ns | |||
| SHUNT CURRENT SENSE AND REGULATION (ISEN, VREF) | ||||||
| AV | ISEN gain | VREF = 2.5 V | 9.6 | 10 | 10.4 | V/V |
| tOFF | Current regulation off time | 25 | μs | |||
| tBLANK | Current regulation blanking time | 2 | μs | |||
| PROTECTION CIRCUITS | ||||||
| VUVLO | Supply undervoltage lockout (UVLO) | Supply rising | 4.15 | 4.3 | 4.45 | V |
| Supply falling | 4.05 | 4.2 | 4.35 | V | ||
| VUVLO_HYS | Supply UVLO hysteresis | Rising to falling threshold | 100 | mV | ||
| tUVLO | Supply undervoltage deglitch time | 10 | μs | |||
| IOCP | Overcurrent protection trip point | 4.5 ≤ VVM < 5.5 V | 3.7 | A | ||
| VVM ≥ 5.5 V | 4.1 | A | ||||
| VOCP_ISEN | Overcurrent protection trip point on ISEN pin | 0.7 | V | |||
| tOCP | Overcurrent protection deglitch time | 1.5 | μs | |||
| TTSD | Thermal shutdown temperature | 150 | 175 | °C | ||
| THYS | Thermal shutdown hysteresis | 40 | °C | |||