| SUPPLY |
| IQ
|
Standby current |
EN = 0, VIN = 14 V, bypass deactivated |
|
200 |
250 |
µA |
| Quiescent current |
EN = 1, VIN = 14 V, bypass deactivated |
|
360 |
570 |
| Internally regulated supply |
EN = 0, IVIN = 2 mA, bypass activated |
10.5 |
15 |
19 |
V |
| EN = 1, IVIN = 2 mA, bypass activated |
14.5 |
15 |
15.5 |
| GATE DRIVER |
| VDRV
|
Gate drive voltage |
Supply voltage in regulation
|
|
VIN
|
|
V |
| IDRV_SINK
|
Gate drive sink current |
VOUT = 15 V; VIN = 15 V |
8 |
15 |
|
mA |
| IDRV_SOURCE
|
Gate drive source current |
VOUT = GND; VIN = 15 V |
|
–15 |
–10 |
mA |
| fPWM
|
PWM clock frequency |
OSC = GND |
15 |
20 |
27 |
kHz |
| DMAX
|
Maximum PWM duty cycle |
|
|
100% |
|
|
| DMIN
|
Minimum PWM duty cycle |
|
|
7.5% |
|
|
| tD
|
Start-up delay |
Delay between EN going high until gate driver starts switching, fPWM = 20 kHz |
|
|
50 |
µs |
| CURRENT CONTROLLER, INTERNAL SETTINGS |
| IPEAK
|
Peak current |
RSENSE = 1 Ω, PEAK = GND |
270 |
300 |
330 |
mA |
| IHOLD
|
Hold current |
RSENSE = 1 Ω, HOLD = GND |
40 |
50 |
65 |
mA |
| CURRENT CONTROLLER, EXTERNAL SETTINGS |
| tKEEP
|
Externally set keep time at peak current |
CKEEP = 1 µF |
|
100 |
|
ms |
| VPEAK
|
Voltage of internal reference to which the SENSE pin voltage is compared to for IPEAK
|
RPEAK = 50 kΩ |
|
900 |
|
mV |
| RPEAK = 200 kΩ |
|
300 |
|
| VHOLD
|
Voltage of internal reference to which the SENSE pin voltage is compared for IHOLD
|
RHOLD = 50 kΩ |
|
150 |
|
mV |
| RHOLD = 200 kΩ |
|
50 |
|
| fPWM
|
Externally set PWM clock frequency |
ROSC = 160 kΩ
|
|
25 |
|
kHz |
| ROSC = 200 kΩ |
|
20 |
|
| LOGIC INPUT LEVELS (EN) |
| VIL
|
Input low level |
|
|
|
1.3 |
V |
| VIH
|
Input high level |
|
1.65 |
|
|
V |
| REN
|
Input pullup resistance |
|
350 |
500 |
|
kΩ |
| Input pulldown resistance
|
|
|
250 |
|
kΩ |
| LOGIC OUTPUT LEVELS (STATUS) |
| VOL
|
Output low level |
Pulldown activated, ISTATUS = 2 mA |
|
|
0.3 |
V |
| IIL
|
Output leakage current |
Pulldown deactivated, V(STATUS) = 5 V |
|
|
2 |
µA |
| UNDERVOLTAGE LOCKOUT |
| VUVLO
|
Undervoltage lockout threshold |
|
|
4.6 |
|
V |
| THERMAL SHUTDOWN |
| TTSU
|
Junction temperature start-up threshold |
|
|
140 |
|
°C |
| TTSD
|
Junction temperature shutdown threshold |
|
|
160 |
|
°C |