ZHCSDO8B May 2015 – February 2022 CSD25484F4
PRODUCTION DATA
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 5-1 Transient
Thermal Impedance
Figure 5-2 Saturation Characteristics
| VDS = –5V | ||
| ID = –0.5 A | VDS = –10 V | |
| ID = –250 μA | ||
| ID = –0.5 A | ||
| Single pulse, typical RθJA = 85°C/W | ||
Figure 5-5 Capacitance
Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
Figure 5-9 Typical Diode Forward Voltage
Figure 5-11 Maximum Drain Current vs Temperature