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ZHCSCN1A July 2014 – August 2014 CSD25304W1015

PRODUCTION DATA.

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = –250 μA	–20			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –16 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = ±8 V			–100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = –250 μA	–0.55	–0.8	–1.15	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –1.8 V, I_D = –1.5 A		65	92	mΩ
		V_GS = –2.5 V, I_D = –1.5 A		36	45.5	mΩ
		V_GS = –4.5 V, I_D = –1.5 A		27	32.5	mΩ
g_ƒs	Transconductance	V_DS = –10 V, I_D = –1.5 A		12		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		458	595	pF
C_OSS	Output Capacitance			231	300	pF
C_RSS	Reverse Transfer Capacitance			12	15.6	pF
Q_g	Gate Charge Total (–4.5 V)	V_DS = –10 V, I_D = –1.5 A		3.3	4.4	nC
Q_gd	Gate Charge Gate-to-Drain			0.5		nC
Q_gs	Gate Charge Gate-to-Source			0.7		nC
Q_g(th)	Gate Charge at V_th			0.4		nC
Q_OSS	Output Charge	V_DS = –10 V, V_GS = 0 V		3.7		nC
t_d(on)	Turn On Delay Time	V_DS = –10 V, V_GS = –4.5 V, I_D = –1.5 A R_G = 20 Ω		6		ns
t_r	Rise Time			4		ns
t_d(off)	Turn Off Delay Time			24		ns
t_ƒ	Fall Time			10		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = –1.5 A, V_GS = 0 V		–0.75	–1	V
Q_rr	Reverse Recovery Charge	V_DS= –10 V, I_F = –1.5 A, di/dt = 200 A/μs		7.2		nC
t_rr	Reverse Recovery Time	V_DS= –10 V, I_F = –1.5 A, di/dt = 200 A/μs		11.6		ns

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾		165		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾		85		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Typ R_θJA = 85°C/W when mounted on
1 inch² of 2 oz. Cu.

Typ R_θJA = 165°C/W when mounted on minimum pad area of
2 oz. Cu.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = –1.5 A		V_DS = –10 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = –1.5 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJA = 165°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = –5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature