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ZHCSGA1 May 2017 CSD22206W

PRODUCTION DATA.

5 Specifications

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_DS = –250 μA	–8			V
BV_GSS	Gate-to-source voltage	V_DS = 0 V, I_G = –250 μA	–6			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = –6.4 V			–1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_DS = –250 μA	–0.4	–0.7	–1.05	V
R_DS(on)	Drain-to-source on resistance	V_GS = –2.5 V, I_DS = –2 A		6.8	9.1	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = –4.5 V, I_DS = –2 A		4.7	5.7	mΩ
g_fs	Transconductance	V_DS = –0.8 V, I_DS = –2 A		20		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_DS = –4 V, ƒ = 1 MHz		1750	2275	pF
C_OSS	Output capacitance			960	1250	pF
C_RSS	Reverse transfer capacitance			340	440	pF
R_G	Series gate resistance			30		Ω
Q_g	Gate charge total (–4.5 V)	V_DS = –4 V, I_D = –2 A		11.2	14.6	nC
Q_gd	Gate charge gate-to-drain			1.8		nC
Q_gs	Gate charge gate-to-source			2.1		nC
Q_g(th)	Gate charge at Vth			1.3		nC
Q_OSS	Output charge	V_DS = –4 V, V_GS = 0 V		7.2		nC
t_d(on)	Turnon delay time	V_DS = –4 V, V_GS = –4.5 V, I_DS = –2 A, R_G = 0 Ω		37		ns
t_r	Rise time			17		ns
t_d(off)	Turnoff delay time			118		ns
t_f	Fall time			45		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_DS = –2 A, V_GS = 0 V		–0.69	–1.0
Q_rr	Reverse recovery charge	V_DS= –4 V, I_F = –1 A, di/dt = 200 A/μs		24		nC
t_rr	Reverse recovery time	V_DS= –4 V, I_F = –1 A, di/dt = 200 A/μs		59		ns

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		TYPICAL VALUES			UNIT
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾		75		°C/W
R_θJA	Junction-to-ambient thermal resistance⁽²⁾		230		°C/W

(1) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.

(2) Device mounted on FR4 material with minimum Cu mounting area.

Typ R_θJA = 75°C/W when mounted on 1 in² of 2-oz Cu.

Typ R_θJA = 230°C/W when mounted on minimum pad area of
2-oz Cu.

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = –2 A	V_DS = –4 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = –2 A

Figure 8. Normalized On-State Resistance vs Temperature

Single pulse, max R_θJA = 75°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = –4 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature