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ZHCSG99 April 2017 CDCS504-Q1

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

PW|8
- MPDS568

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

zhcsg99_oa

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_DD	Supply voltage	–0.5	4.6	V
V_IN	Input voltage	–0.5	4.6	V
V_out	Output voltage	–0.5	4.6	V
I_IN	Input current (V_I < 0, V_I > V_DD)		20	mA
I_out	Continuous output current		50	mA
T_J	Maximum junction temperature		125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±1500	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±750	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

			MIN	NOM	MAX	UNIT
V_DD	Supply voltage		3		3.6	V
f_IN	Input frequency	FS = 0	2		27	MHz
f_IN	Input frequency	FS = 1	2		27	MHz
V_IL	Low-level input voltage LVCMOS				0.3 × V_DD	V
V_IH	High-level input voltage LVCMOS		0.7 × V_DD			V
V_I	Input voltage threshold LVCMOS			0.5 × V_DD		V
C_L	Output load test LVCMOS				15	pF
I_OH/I_OL	Output current				±12	mA
T_A	Operating free-air temperature		–40		105	°C

6.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)⁽²⁾

THERMAL METRIC⁽¹⁾				CDCS504-Q1	UNIT
				PW (TSSOP)
				8 PINS
R_θJA	Junction-to-ambient thermal resistance			179.9	°C/W
		High K	Thermal Airflow (CFM) 0	149
			Thermal Airflow (CFM) 150	142
			Thermal Airflow (CFM) 250	138
			Thermal Airflow (CFM) 500	132
		Low K	Thermal Airflow (CFM) 0	230
			Thermal Airflow (CFM) 150	185
			Thermal Airflow (CFM) 250	170
			Thermal Airflow (CFM) 500	150
R_θJC(top)	Junction-to-case (top) thermal resistance			64.9	°C/W
		High K		65
		Low K		69
R_θJB	Junction-to-board thermal resistance			108.7	°C/W
ψ_JT	Junction-to-top characterization parameter			9	°C/W
ψ_JB	Junction-to-board characterization parameter			107	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance			n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

(2) The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-k board).

6.5 Electrical Characteristics – Device Characteristics

over recommended operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
I_DD	Device supply current	f_in = 3.072 MHz; FS = 1		24		mA
f_OUT	Output frequency	FS = 0	2		27	MHz
f_OUT	Output frequency	FS = 1	8		108	MHz
I_IH	LVCMOS input current	V_I = V_DD; V_DD = 3.6 V			10	μA
I_IL	LVCMOS input current	V_I = 0 V; V_DD = 3.6 V			–10	μA
V_OH	LVCMOS high-level output voltage	I_OH = -–0.1 mA	2.9			V
		I_OH = -–8 mA	2.4
		I_OH = -–12 mA	2.2
V_OL	LVCMOS low-level output voltage	I_OL = 0.1 mA			0.1	V
		I_OL = 8 mA			0.5
		I_OL = 12 mA			0.8
I_OZ	High-impedance-state output current	OE = Low	–2		2	μA
t_JIT(C-C)	Cycle to cycle jitter⁽¹⁾	f_out = 11.264 MHz; FS = 1, 10000 Cycles		144		ps
t_r	Rise time⁽¹⁾	20%–80%		0.65		ns
t_f	Fall time⁽¹⁾	20%–80%		0.55		ns
O_dc	Output duty cycle⁽²⁾		45%		55%

(1) Measured with Test Load, see Figure 4.

(2) Not production tested.

6.6 Typical Characteristics

Figure 1. Typical Tr vs Output Frequency, VDD, Temperature in X4 Mode

V_CC = 3.3 V, output loaded with test load

Figure 3. I_DD vs Input Frequency

Figure 2. Typical Tf vs Output Frequency, VDD, Temperature in X4 Mode