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ZHCS278F June 2011 – October 2014 CC1121

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

RHB|32
- MPQF130D

散熱焊盤機械數據 (封裝 | 引腳)

RHB|32
- QFND029X

訂購信息

4 Specifications

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.

4.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾

over operating free-air temperature range (unless otherwise noted)

PARAMETER	MIN	MAX	UNIT	CONDITION
Supply voltage (VDD, AVDD_x)	–0.3	3.9	V	All supply pins must have the same voltage
Input RF level		+10	dBm
Voltage on any digital pin	–0.3	VDD+0.3	V	max 3.9 V
Voltage on analog pins (including DCPL pins)	–0.3	2.0	V

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to V_SS, unless otherwise noted.

4.2 Handling Ratings

				MIN	MAX	UNIT
T_stg	Storage temperature range			–40	125	°C
V_ESD	Electrostatic discharge (ESD) performance:	Human body model (HBM), per ANSI/ESDA/JEDEC JS001⁽¹⁾		–2	2	kV
V_ESD	Electrostatic discharge (ESD) performance:	Charged device model (CDM), per JESD22-C101⁽²⁾	All pins	–500	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions (General Characteristics)

PARAMETER	MIN	MAX	UNIT	CONDITION
Voltage supply range	2.0	3.6	V	All supply pins must have the same voltage
Voltage on digital inputs	0	VDD	V
Temperature range	–40	85	°C	Ambient

4.4 Thermal Resistance Characteristics for RHB Package

		°C/W⁽¹⁾
Rθ_JC	Junction-to-case (top)	21.1
Rθ_JB	Junction-to-board	5.3
Rθ_JA	Junction-to-free air	31.3
Psi_JT	Junction-to-package top	0.2
Psi_JB	Junction-to-board	5.3
Rθ_JC	Junction-to-case (bottom)	0.8

(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘ_JC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:

JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements

Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.

(2) m/s = meters per second

4.5 RF Characteristics

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Frequency bands	820		960	MHz
	410		480	MHz
	(273.3)		(320)	MHz	For more information, see application note AN115, Using the CC112x/CC1175 at 274 to 320 MHz.
	164		192	MHz
	(205)		(240)	MHz	Please contact TI for more information about the use of these frequency bands.
	(136.7)		(160)	MHz
Frequency resolution		30		Hz	In 820- to 950-MHz band
		15		Hz	In 410- to 480-MHz band
		6		Hz	In 164- to 192-MHz band
Data rate	0		200	kbps	Packet mode
Data rate	0		100	kbps	Transparent mode
Data rate step size		1e-4		bps

4.6 Regulatory Standards

PERFORMANCE MODE	FREQUENCY BAND	SUITABLE FOR COMPLIANCE WITH	COMMENTS
High-performance mode	820–960 MHz	ARIB T-108 ARIB T-96 ETSI EN 300 220, receiver category 2 ETSI EN 54-25 FCC PART 24 Submask D FCC Part 15.247 FCC Part 15.249	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device
	410–480 MHz	ETSI EN 300 220, category 2	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
	164–192 MHz	ETSI EN 300 220, category 2	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
Low-power mode	820–960 MHz	ETSI EN 300 220, category 2 FCC Part 15.247 FCC Part 15.249
	410–480 MHz	ETSI EN 300 220, category 2
	164–192 MHz	ETSI EN 300 220, category 2

4.7 Current Consumption, Static Modes

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	MAX	UNIT	CONDITION
Power down with retention	0.12	1	µA
Power down with retention	0.5		µA	Low-power RC oscillator running
XOFF mode	170		µA	Crystal oscillator / TCXO disabled
IDLE mode	1.3		mA	Clock running, system waiting with no radio activity

4.8 Current Consumption, Transmit Modes

4.8.1 950-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +10 dBm		37		mA
TX current consumption 0 dBm		26		mA

4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER		MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +14 dBm			45		mA
TX current consumption +10 dBm			34		mA

4.8.3 434-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT
TX current consumption +15 dBm	50	mA
TX current consumption +14 dBm	45	mA
TX current consumption +10 dBm	34	mA

4.8.4 169-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT
TX current consumption +15 dBm	54	mA
TX current consumption +14 dBm	49	mA
TX current consumption +10 dBm	41	mA

4.8.5 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER		MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +10 dBm			32		mA

4.9 Current Consumption, Receive Modes

4.9.1 High-Performance Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
RX wait for sync 1.2 kbps, 4-byte preamble	2	mA	Using RX sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet
RX peak current			Peak current consumption during packet reception at the sensitivity threshold
433-, 868-, 915-, 920-, and 950-MHz bands	22	mA
169-MHz band	23	mA
Average current consumption Check for data packet every 1 second using Wake-on-Radio	15	µA	50 kbps, 5-byte preamble, 40-kHz RC oscillator used as sleep timer

4.9.2 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER		MIN	TYP	MAX	UNIT	CONDITION
RX peak current low-power RX mode						Peak current consumption during packet reception at the sensitivity level
1.2 kbps			17		mA

4.10 Receive Parameters

All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%.

4.10.1 General Receive Parameters (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Saturation		+10		dBm
Digital channel filter programmable bandwidth	41.7		200	kHz
IIP3, normal mode		–14		dBm	At maximum gain
IIP3, high linearity mode		–8		dBm	Using 6-dB gain reduction in front end
Data rate offset tolerance		±12		%	With carrier sense detection enabled and assuming 4-byte preamble
Data rate offset tolerance		±0.2		%	With carrier sense detection disabled
Spurious emissions					Radiated emissions measured according to ETSI EN 300 220, f_c = 869.5 MHz
1–13 GHz (VCO leakage at 3.5 GHz)		–56		dBm
30 MHz to 1 GHz		< –57		dBm
Optimum source impedance					(Differential or single-ended RX configurations)
868-, 915-, and 920-MHz bands	60 + j60 / 30 + j30			Ω
433-MHz band	100 + j60 / 50+ j30			Ω
169-MHz band	140 + j40 / 70 + j20			Ω

4.10.2 RX Performance in 950-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Sensitivity Note: Sensitivity can be improved if the TX and RX matching networks are separated.	–114	dBm	1.2 kbps, DEV=20 kHz CHF=50 kHz⁽¹⁾
	–107	dBm	50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz⁽¹⁾
	–100	dBm	200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz, 4GFSK⁽²⁾
Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	47	dB	± 50 kHz (adjacent channel)
	48	dB	+ 100 kHz (alternate channel)
	69	dB	± 1 MHz
	71	dB	± 2 MHz
	78	dB	± 10 MHz
Blocking and selectivity 50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode)	43	dB	± 200 kHz (adjacent channel)
	51	dB	± 400 kHz (alternate channel)
	62	dB	± 1 MHz
	65	dB	± 2 MHz
	71	dB	± 10 MHz
Blocking and selectivity 200-kbps 4GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF	37	dB	± 200 kHz (adjacent channel)
	44	dB	± 400 kHz (alternate channel)
	55	dB	± 1 MHz
	58	dB	± 2 MHz
	64	dB	± 10 MHz

(1) DEV is short for deviation, CHF is short for Channel Filter Bandwidth

(2) BT=0.5 is used in all GFSK measurements

4.10.3 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–120	dBm	1.2 kbps, DEV=10 kHz CHF=41.7 kHz⁽¹⁾, using increased RX filtering
	–117	dBm	1.2 kbps, DEV=20 kHz CHF=50 kHz⁽¹⁾
	–114	dBm	4.8 kbps OOK
	–110	dBm	38.4 kbps, DEV=20 kHz CHF=100 kHz⁽¹⁾
	–110	dBm	50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz⁽¹⁾
	–103	dBm	200 kbps, DEV=83 kHz (outer symbols), CHF=200 kHz⁽¹⁾, 4GFSK
Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	48	dB	± 50 kHz (adjacent channel)
	48	dB	± 100 kHz (alternate channel)
	69	dB	± 1 MHz
	74	dB	± 2 MHz
	81	dB	± 10 MHz
Blocking and selectivity 38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter	42	dB	+ 100 kHz (adjacent channel)
	43	dB	± 200 kHz (alternate channel)
	62	dB	± 1 MHz
	66	dB	± 2 MHz
	74	dB	± 10 MHz
Blocking and selectivity 50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode)	43	dB	± 200 kHz (adjacent channel)
	50	dB	± 400 kHz (alternate channel)
	61	dB	± 1 MHz
	65	dB	± 2 MHz
	74	dB	± 10 MHz
Blocking and selectivity 200-kbps 4GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF	36	dB	± 200 kHz (adjacent channel)
	44	dB	± 400 kHz (alternate channel)
	55	dB	± 1 MHz
	59	dB	± 2 MHz
	67	dB	± 10 MHz

4.10.4 RX Performance in 434-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–109	dBm	50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz⁽¹⁾
Sensitivity	–116	dBm	1.2 kbps, DEV=20 kHz CHF=50 kHz⁽¹⁾
Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	54	dB	± 50 kHz (adjacent channel)
	54	dB	+ 100 kHz (alternate channel)
	74	dB	± 1 MHz
	78	dB	± 2 MHz
	86	dB	± 10 MHz
Blocking and selectivity 38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter	47	dB	+ 100 kHz (adjacent channel)
	50	dB	± 200 kHz (alternate channel)
	67	dB	± 1 MHz
	71	dB	± 2 MHz
	78	dB	± 10 MHz

4.10.5 RX Performance in 169-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–117	dBm	1.2 kbps, DEV=20 kHz CHF=50 kHz⁽¹⁾
Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	60	dB	± 50 kHz (adjacent channel)
	60	dB	+ 100 kHz (alternate channel)
	76	dB	± 1 MHz
	77	dB	± 2 MHz
	83	dB	± 10 MHz

4.10.6 RX Performance in Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–99	dBm	38.4 kbps, DEV=50 kHz CHF=100 kHz⁽¹⁾
Sensitivity	–99	dBm	50 kbps 2GFSK, DEV=25 kHz, CHF=100 kHz⁽¹⁾
Blocking and selectivity 1.2-kbps 2FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	43	dB	± 50 kHz (adjacent channel)
	45	dB	+ 100 kHz (alternate channel)
	71	dB	± 1 MHz
	74	dB	± 2 MHz
	75	dB	± 10 MHz
Blocking and selectivity 38.4-kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter	37	dB	+ 100 kHz (adjacent channel)
	43	dB	+ 200 kHz (alternate channel)
	58	dB	± 1 MHz
	62	dB	± 2 MHz
	64	dB	+ 10 MHz
Blocking and selectivity 50-kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode)	43	dB	+ 200 kHz (adjacent channel)
	52	dB	+ 400 kHz (alternate channel)
	60	dB	± 1 MHz
	64	dB	± 2 MHz
	65	dB	± 10 MHz
Saturation	+10	dBm

4.11 Transmit Parameters

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	MIN	TYP	UNIT	CONDITION
Max output power		+12	dBm	At 950 MHz
		+14	dBm	At 915- and 920-MHz
		+15	dBm	At 915- and 920-MHz with VDD = 3.6 V
		+15	dBm	At 868 MHz
		+16	dBm	At 868 MHz with VDD = 3.6 V
		+15	dBm	At 433 MHz
		+16	dBm	At 433 MHz with VDD = 3.6 V
		+15	dBm	At 169 MHz
		+16	dBm	At 169 MHz with VDD = 3.6 V
Min output power		–11	dBm	Within fine step size range
Min output power		–40	dBm	Within coarse step size range
Output power step size		0.4	dB	Within fine step size range
Adjacent channel power		–75	dBc	4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant)
		–58	dBc	4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI 300 220 compliant)
		–61	dBc	2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation
Spurious emissions (not including harmonics)		<–60	dBm
Harmonics				Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design. Emissions measured according to ARIB T-96 in 950-MHz band, ETSI EN 300 220 in 169-, 433-, and 868-MHz bands and FCC Part 15.247 in 450- and 915-MHz band Fourth harmonic in 915-MHz band will require extra filtering to meet FCC requirements if transmitting for long intervals (>50-ms periods).
Second Harm, 169 MHz		–39	dBm
Third Harm, 169 MHz		–58	dBm
Second Harm, 433 MHz		–56	dBm
Third Harm, 433 MHz		–51	dBm
Second Harm, 450 MHz		–60	dBm
Third Harm, 450 MHz		–45	dBm
Second Harm, 868 MHz		–40	dBm
Third Harm, 868 MHz		–42	dBm
Second Harm, 915 MHz		56	dBuV/m
Third Harm, 915 MHz		52	dBuV/m
Fourth Harm, 915 MHz		60	dBuV/m
Second Harm, 950 MHz		–58	dBm
Third Harm, 950 MHz		–42	dBm
Optimum load
Impedance 868-, 915-, and 920-MHz bands	35 + j35		Ω
433-MHz band	55 + j25		Ω
169-MHz band	80 + j0		Ω

4.12 PLL Parameters

4.12.1 High-Performance Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Phase noise in 950-MHz band	–99	dBc/Hz	± 10 kHz offset
	–99	dBc/Hz	± 100 kHz offset
	–123	dBc/Hz	± 1 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands	–99	dBc/Hz	± 10 kHz offset
	–100	dBc/Hz	± 100 kHz offset
	–122	dBc/Hz	± 1 MHz offset
Phase noise in 433-MHz band	–106	dBc/Hz	± 10 kHz offset
	–107	dBc/Hz	± 100 kHz offset
	–127	dBc/Hz	± 1 MHz offset
Phase noise in 169-MHz band	–111	dBc/Hz	± 10 kHz offset
	–116	dBc/Hz	± 100 kHz offset
	–135	dBc/Hz	± 1 MHz offset

4.12.2 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Phase noise in 950-MHz band	–90	dBc/Hz	± 10 kHz offset
	–92	dBc/Hz	± 100 kHz offset
	–124	dBc/Hz	± 1 MHz offset
Phase noise in 868- and 915-MHz bands	–95	dBc/Hz	± 10 kHz offset
	–95	dBc/Hz	± 100 kHz offset
	–124	dBc/Hz	± 1 MHz offset
Phase noise in 433-MHz band	–98	dBc/Hz	± 10 kHz offset
	–102	dBc/Hz	± 100 kHz offset
	–129	dBc/Hz	± 1 MHz offset
Phase noise in 169-MHz band	–106	dBc/Hz	± 10 kHz offset
	–110	dBc/Hz	± 100 kHz offset
	–136	dBc/Hz	± 1 MHz offset

4.13 Wake-up and Timing

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Powerdown to IDLE	0.4	ms	Depends on crystal
IDLE to RX/TX	166	µs	Calibration disabled
IDLE to RX/TX	461	µs	Calibration enabled
RX/TX turnaround	50	µs
RX/TX to IDLE time	296	µs	Calibrate when leaving RX/TX enabled
RX/TX to IDLE time	0	µs	Calibrate when leaving RX/TX disabled
Frequency synthesizer calibration	391	µs	When using SCAL strobe
Minimum required number of preamble bytes	0.5	bytes	Required for RF front-end gain settling only. Digital demodulation does not require preamble for settling.
Time from start RX until valid RSSI Including gain settling (function of channel bandwidth). Programmable for trade-off between speed and accuracy	0.3	ms	200-kHz channels

4.14 32-MHz Crystal Oscillator

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Crystal frequency	32		33.6	MHz	It is expected that there will be degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX.
Load capacitance (C_L)		10		pF
ESR			60	Ω	Simulated over operating conditions
Start-up time		0.4		ms	Depends on crystal

4.15 32-MHz Clock Input (TCXO)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	MAX	UNIT	CONDITION
Clock frequency	32	33.6	MHz
TCXO with CMOS output				TCXO with CMOS output directly coupled to pin EXT_OSC
High input voltage	1.4	VDD	V
Low input voltage	0	0.6	V
Rise / Fall time		2	ns
Clipped sine output				TCXO clipped sine output connected to pin EXT_OSC through series capacitor
Clock input amplitude (peak-to-peak)	0.8	1.5	V

4.16 32-kHz Clock Input

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	TYP	MAX	UNIT
Clock frequency		32		kHz
32-kHz clock input pin input high voltage	0.8×VDD			V
32-kHz clock input pin input low voltage			0.2×VDD	V

4.17 32-kHz RC Oscillator

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	TYP	UNIT	CONDITION
Frequency	32	kHz	After calibration
Frequency accuracy after calibration	±0.1	%	Relative to frequency reference (that is, 32-MHz crystal or TCXO)
Initial calibration time	1.6	ms

4.18 I/O and Reset

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Logic input high voltage	0.8×VDD			V
Logic input low voltage			0.2×VDD	V
Logic output high voltage	0.8×VDD			V	At 4-mA output load or less
Logic output low voltage			0.2×VDD	V	At 4-mA output load or less
Power-on reset threshold		1.3		V	Voltage on DVDD pin

4.19 Temperature Sensor

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Temperature sensor range	–40		85	°C
Temperature coefficient		2.66		mV / °C	Change in sensor output voltage versus change in temperature
Typical output voltage		794		mV	Typical sensor output voltage at T_A = 25°C, VDD = 3.0 V
VDD coefficient		1.17		mV / V	Change in sensor output voltage versus change in VDD

The CC1121 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (See Section 4.19, Temperature Sensor). For more information, see the temperature sensor design note (SWRA415).

4.20 Typical Characteristics

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz if nothing else stated.

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1 or CC1120EM_169 rev.1.2.

Figure 4-6 was measured at the 50-Ω antenna connector.

Figure 4-1 TX Current at 868 MHz
vs PA Power Setting

Figure 4-3 Output Power vs Voltage
Max Setting, 170 MHz

200 kbps, DEV = 83 kHz (Outer Symbols), 4GFSK

Figure 4-5 Eye Diagram

9.6 kbps in 12.5-kHz Channel

Figure 4-7 FCC Part 90 Mask D

Figure 4-9 GPIO Output High Voltage vs Current Being Sourced

Figure 4-2 Output Power vs Temperature
Max Setting, 170 MHz, 3.6 V

Figure 4-4 Output Power at 868 MHz
vs PA Power Setting

Figure 4-6 Output Power vs Load Impedance (+14-dBm Setting)

Figure 4-8 Phase Noise in 868-MHz Band

Figure 4-10 GPIO Output Low Voltage vs Current Being Sinked

封裝選項

機械數據 (封裝 | 引腳)

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

4 Specifications

4.1 Absolute Maximum Ratings(1)(2)

4.2 Handling Ratings

4.3 Recommended Operating Conditions (General Characteristics)

4.4 Thermal Resistance Characteristics for RHB Package

4.5 RF Characteristics

4.6 Regulatory Standards

4.7 Current Consumption, Static Modes

4.8 Current Consumption, Transmit Modes

4.8.1 950-MHz Band (High-Performance Mode)

4.8.2 868-, 915-, and 920-MHz Bands (High-Performance Mode)

4.8.3 434-MHz Band (High-Performance Mode)

4.8.4 169-MHz Band (High-Performance Mode)

4.8.5 Low-Power Mode

4.9 Current Consumption, Receive Modes

4.9.1 High-Performance Mode

4.9.2 Low-Power Mode

4.10 Receive Parameters

4.10.1 General Receive Parameters (High-Performance Mode)

4.10.2 RX Performance in 950-MHz Band (High-Performance Mode)

4.10.3 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)

4.10.4 RX Performance in 434-MHz Band (High-Performance Mode)

4.10.5 RX Performance in 169-MHz Band (High-Performance Mode)

4.10.6 RX Performance in Low-Power Mode

4.11 Transmit Parameters

4.12 PLL Parameters

4.12.1 High-Performance Mode

4.12.2 Low-Power Mode

4.13 Wake-up and Timing

4.14 32-MHz Crystal Oscillator

4.15 32-MHz Clock Input (TCXO)

4.16 32-kHz Clock Input

4.17 32-kHz RC Oscillator

4.18 I/O and Reset

4.19 Temperature Sensor

4.20 Typical Characteristics

4.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾