ZHCSIF0N September 2008 – October 2021 BQ24072 , BQ24073 , BQ24074 , BQ24075 , BQ24079
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Revision History
- 5 說明（續(xù)）
- 6 Device Comparison Table
- 7 Pin Configuration and Functions
- 8 Specifications
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 Undervoltage Lockout (UVLO)
- 9.3.2 Power On
- 9.3.3 Overvoltage Protection (OVP)
- 9.3.4 Dynamic Power Path Management
- 9.3.5
Battery Charging
- 9.3.5.1 Charge Current Translator
- 9.3.5.2 Adjustable Termination Threshold (ITERM Input, BQ24074)
- 9.3.5.3 Termination Disable (TD Input, BQ24072, BQ24073)
- 9.3.5.4 Battery Detection and Recharge
- 9.3.5.5 Battery Disconnect (SYSOFF Input, BQ24075, BQ24079)
- 9.3.5.6 Dynamic Charge Timers (TMR Input)
- 9.3.5.7 Status Indicators ( PGOOD, CHG)
- 9.3.5.8 Thermal Regulation and Thermal Shutdown
- 9.3.6 Battery Pack Temperature Monitoring
- 9.4 Device Functional Modes
-
10Application and Implementation
- 10.1 Application Information
- 10.2 Typical Application
- 10.3 System Examples
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGT|16
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGT|16
訂購(gòu)信息
13.5 Electrostatic Discharge Caution
 |
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. |
| ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. |