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ZHCSNE9 December 2021 AMC1351-Q1

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

DWV|8
- MPDS382B

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

zhcsne9_oa

6.9 Electrical Characteristics

minimum and maximum specifications apply from T_A = –40°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, IN = –0.25 V to +5 V (unless otherwise noted); typical specifications are at T_A = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
ANALOG INPUT
V_OS	Offset voltage⁽²⁾	T_A = 25°C, IN = GND1, 4.5 V ≤ VDD1 ≤ 5.5 V(1)	–1.5	±0.3	1.5	mV
V_OS	Offset voltage⁽²⁾	T_A = 25°C, IN = GND1, 3.0 V ≤ VDD1 ≤ 5.5 V(3)	–2.5	–0.8	2.5	mV
ΔV_OS	Offset voltage long-term stability	10 years at T_A = 55℃		0⁽⁷⁾		mV
TCV_OS	Offset voltage thermal drift(6)	IN = GND1	–15	±3	15	μV/°C
ΔTCV_OS	Offset voltage thermal drift long-term stability	10 years at T_A = 55℃, IN = GND1		0⁽⁷⁾		mV/°C
R_IN	Input resistance		1	1.25	1.5	M?
ΔR_IN	Input resistance long-term stability	10 years at T_A = 55℃		0⁽⁷⁾		ppm
TCR_IN	Input resistance thermal drift	–40℃ ≤ T_A ≤ 85℃		5		ppm/°C
C_IN	Input capacitance	f_IN = 275 kHz		4		pF
ANALOG OUTPUT
	Nominal gain			0.40		V/V
E_G	Gain error⁽¹⁾	T_A = 25℃	–0.2%	±0.05%	0.2%
ΔE_G	Gain error long-term stability	10 years at T_A = 55℃		0⁽⁷⁾
TCE_G	Gain error thermal drift(1)(7)		–35	±10	35	ppm/°C
ΔTCE_G	Gain error thermal drift long-term stability	10 years at T_A = 55℃		0⁽⁷⁾		ppm/°C
	Nonlineartity⁽¹⁾		–0.02%	±0.003%	0.02%
	Nonlinearity thermal drift			0.2		ppm/°C
THD	Total harmonic distortion⁽⁴⁾	V_IN = 5 V_PP, f_IN = 10 kHz, BW = 100 kHz		–82		dB
SNR	Signal-to-noise ratio	V_IN = 5 V_PP, f_IN = 1 kHz, BW = 10 kHz	75	79		dB
SNR	Signal-to-noise ratio	V_IN = 5 V_PP, f_IN = 10 kHz, BW = 100 kHz		69		dB
	Output noise	IN = GND1, BW = 100 kHz		250		μVrms
PSRR	Power-supply rejection ratio⁽²⁾	PSRR vs VDD1, DC		–67		dB
		PSRR vs VDD2, DC		–80
		PSRR vs VDD1 with 10-kHz, 100-mV ripple		–65
		PSRR vs VDD2 with 10-kHz, 100-mV ripple		–64
V_CMout	Output common-mode voltage		1.39	1.44	1.49	V
V_CLIPout	Clipping differential output voltage	V_OUT = (V_OUTP – V_OUTN), V_IN > V_Clipping		2.49		V
V_Fail-safe	Fail-safe differential output voltage	VDD1 undervoltage or VDD1 missing		–2.57	–2.5	V
BW	Output bandwidth		275	300		kHz
R_OUT	Output resistance	On OUTP or OUTN		< 0.2		Ω
	Output short-circuit current	On OUTP or OUTN, sourcing or sinking, IN = GND1, outputs shorted to either GND or VDD2		14		mA
CMTI	Common-mode transient immunity		100	150		kV/μs
POWER SUPPLY
VDD1_UV	VDD1 undervoltage detection threshold	VDD1 rising	2.5	2.7	2.9	V
VDD1_UV	VDD1 undervoltage detection threshold	VDD1 falling	2.4	2.6	2.8	V
VDD2_UV	VDD2 undervoltage detection threshold	VDD2 rising	2.2	2.45	2.65	V
VDD2_UV	VDD2 undervoltage detection threshold	VDD2 falling	1.85	2.0	2.2	V
I_DD1	High-side supply current	3.0 V < VDD1 < 3.6 V		6.0	8.1	mA
I_DD1	High-side supply current	4.5 V < VDD1 < 5.5 V		7.0	9.3	mA
I_DD2	Low-side supply current	3.0 V < VDD2 < 3.6 V		5.3	7.2	mA
I_DD2	Low-side supply current	4.5 V < VDD2 < 5.5 V		5.9	8.1	mA

(1) The typical value includes one standard deviation (sigma) at nominal operating conditions.

(2) This parameter is input referred.

(3) The typical value is at VDD1 = 3.3 V.

(4) THD is the ratio of the rms sum of the amplitues of first five higher harmonics to the amplitude of the fundamental.

(5) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCV_OS = (V_OS,MAX - V_OS,MIN) / TempRange where V_OS,MAX and V_OS,MIN refer to the maximum and minimum V_OS values measured within the temperature range (–40 to 125℃).

(6) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCE_G (ppm) = ((E_G,MAX - E_G,MIN) / TempRange) x 10⁴ where E_G,MAX and E_G,MIN refer to the maximum and minimum E_G values (in %) measured within the temperature range (–40 to 125℃).

(7) Value is below measurement capability.