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ZHCSDN3B February 2015 – May 2015 ALM2402-Q1

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

PWP|14
- MPDS370A
DRR|12
- MPSS085A

散熱焊盤機械數據 (封裝 | 引腳)

PWP|14
- PPTD332B

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

at 25°C free-air temperature (unless otherwise noted)

		MIN	MAX	UNIT
V_CC	Supply Voltage	-0.3	18	V
V_{CC_(OX)}	Output supply voltage⁽²⁾	-0.3	18	V
V_OUT(X)	Opamp voltage⁽²⁾	-0.3	18	V
V_IN(X)	Positive and negative input to GND voltage ⁽²⁾	-0.3	18	V
I_OTF	Over Temperature Flag pin maximum Current		20	mA
V_OTF	Over Temperature Flag pin maximum Voltage	0	7	V
I_SC	Continuous output short current per opamp		Internally Limited	mA
I_SC	Continuous output short current per opamp		Figure 6	mA
T_A	Operating free-air temperature range	–40	125	°C
T_J	Operating virtual junction temperature⁽³⁾	-40	150	°C
T_stg	Storage temperature range	–65	150	°C

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to the GND/substrate terminal, unless otherwise noted.

(3) Maximum power dissipation is a function of T_J(max), θ_JA, and T_A. The maximum allowable power dissipation at any allowable ambient temperature is P_D = (T_J(max) – T_A)/θ_JA. Operating at the absolute maximum T_J of 150°C can affect reliability.

7.2 Thermal Information

THERMAL METRIC⁽¹⁾		ALM2402Q1	UNIT
		DRR
		12 PINS
θ_JA	Junction-to-ambient thermal resistance	39.2	°C/W
θ_JCtop	Junction-to-case (top) thermal resistance	34.5	°C/W
θ_JB	Junction-to-board thermal resistance	15.0	°C/W
ψ_JT	Junction-to-top characterization parameter	0.3	°C/W
ψ_JB	Junction-to-board characterization parameter	15.2	°C/W
θ_JCbot	Junction-to-case (bottom) thermal resistance	4.2	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.3 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±750	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.4 Recommended Operating Conditions

T_A= 25°C

		MIN	MAX	UNIT
T_J	Junction Temperature	-40	150	°C
T_A	Ambient Temeperature	-40	125	°C
I_OUT⁽¹⁾	Continuous output current (sourcing)		400	mA
I_OUT⁽¹⁾	Continuous output current (sinking)		400	mA
V_{IH_OTF}	OTF input high voltage (Opamp "On" or full operation state)	1.0		V
V_{IL_OTF}	OTF input low voltage (Opamp "Off" or shutdown state)		0.35
V_IN(X)	Positive and negative input to GND voltage	0	7
V_OTF	Over Temperature Flag pin maximum Voltage	2	5
V_CC	Input Vcc	4.5	16
V_{CC_O(X)}	Output Vcc	3	16

(1) Current Limit must taken into consideration when choosing maximum output current

7.5 Electrical Characteristics

V_OTF = 5 V, V_CC = V_{CC_O1} = V_{CC_O2} = 5 V and 12 V; T_A = –40°C to 125°C; Typical Values at T_A= 25°C, unless otherwise noted

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_IO	Input Offset Voltage ⁽²⁾	V_ICM = Vcc/2, R_L = 10 kΩ			1	15	mV
I_IB	Input Bias Current ⁽²⁾	V_ICM= Vcc/2			1.5	100	nA
I_IOS	Input Offset Current ⁽²⁾	V_ICM = Vcc/2				30	nA
V_ICM	Input Common Mode Range ⁽²⁾	V_CC = 5.0		0.2		Vcc-1.2	V
V_ICM	Input Common Mode Range ⁽²⁾	V_CC = 12.0 V		0.2		7	V
I_CC	Total Supply Current (both amplifiers)⁽²⁾	I_O = 0 A			5	15	mA
I_CC	Total Supply Current (both amplifiers)⁽²⁾	V_OTF = 0V			0.5⁽⁴⁾		mA
Vo	Positive Output Swing	V_CC = V_{CC_O(X)} = 5.0 V; V_ICM = Vcc/2; V_ID = 100 mV	I_SINK = 200 mA	4.7	4.87		V
	Positive Output Swing	V_CC = V_{CC_O(X)} = 5.0 V; V_ICM = Vcc/2; V_ID = 100 mV	I_SINK = 100 mA	4.85	4.94		V
	Negative Output Swing	V_CC= V_{CC_O(X)} = 5.0 V; V_ICM = Vcc/2; V_ID = 100 mV	I_SOURCE = 200 mA		200	425	mV
	Negative Output Swing	V_CC= V_{CC_O(X)} = 5.0 V; V_ICM = Vcc/2; V_ID = 100 mV	I_SOURCE = 100 mA		100	200	mV
OTF	Over Temp. Fault and Shutdown⁽¹⁾			157	165	175	°C
V_{OL_OTF}	Over Temp. Fault low voltage	Rpullup = 2.5 kΩ, Vpullup = 5.0 V				450	mV
I_LIMIT	Short to Supply Limit (low-side limit)⁽³⁾				550		mA
I_LIMIT	Short to Ground Limit (high-side limit)⁽²⁾⁽³⁾				750		mA
PSRR	Power Supply Rejection Ratio⁽²⁾	V_CC = 5.0 V to 12 V, R_L = 10 kΩ, V_ICM = Vcc/2, V_O = Vcc/2		65	90		dB
CMRR	Common Mode Rejection Ratio⁽²⁾	V_ICM= V_ICM(min) to V_ICM(max), R_L = 10 kΩ, V_O = Vcc/2		45	90		dB
A_VD	DC Voltage Gain⁽²⁾	RL = 10 kΩ, V_ICM = Vcc/2, V_O = 0.3 V to Vcc-1.5		70	90		dB

(1) Please see refer to Absolute Maximum Ratings table for maximum junction temperature recommendations.

(2) Tested and verified in closed loop negative feedback configuration.

(3) This is the static current limit. It can be temporarily higher in applications due to internal propagation delay.

(4) Verified by design.

7.6 AC Characteristics

T_J= –40°C to 125°C; Typical Values at T_A = T_J = 25°C; V_CC= V_{CC_O1} = V_{CC_O2} = 5.0 V and 12 V; V_ICM=V_CC/2

PARAMETER		TEST CONDITIONS	TYP	UNIT
GBW	Gain Bandwidth	C_L=15 pF R_L=10 kΩ	600	KHz
PM	Phase Margin	C_L=200 nF R_L= 50 Ω	50	°
GM	Gain Margin	C_L=200 nF R_L= 50 Ω	17	dB
SR	Slew Rate	G = +1; C_L=50 pF; 3 V step	0.17	V/us
THD + N	Total Harmonic Distortion + Noise	A_V = 2 V/V, R_L = 100 Ω, Vo = 8 Vpp, Vcc = 12 V, F = 1 kHz, V_ICM = Vcc/2	-80	dB
e_n	Input Voltage Noise Density	Vcc = 5 V, F = 1kHz, V_ICM = Vcc/2	110	nV/√HZ